IRF OM6050SJ

OM6050SJ OM6052SJ OM6054SJ
OM6051SJ OM6053SJ OM6055SJ
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Size 7 Die, High Energy
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low RDS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS @ 25°C
PART NUMBER
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
SCHEMATIC
VDS
100 V
200 V
500 V
600 V
800 V
1000 V
ID (Continuous)
100 A
55 A
30 A
25 A
18 A
10 A
MECHANICAL OUTLINE
ø.165
.155
1
RDS(on)
.014
.030
.160
.230
.500
.800
.290
.260
.805
.795
.065
.055
.150
.950 .140
.930
.665
.645
1 2 3
.750
.500
3
.200
.200
2
.400
.065
ø.055
TO-267
4 11 R0
3.1 - 105
.160
3.1
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS (T
C
Parameter
Symbol
= 25 C unless otherwise noted)
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
Unit
Drain Source Voltage
VDS
100
200
500
600
800
1000
V
Drain Gate Voltage (RGS = 1.0 M )
VDGR
100
200
500
600
800
1000
V
Continuous Drain Current @ TC = 25°C 2
ID
100
55
30
25
18
10
A
Continuous Drain Current @ TC = 100°C 2
ID
43
23
13
10
7
4
A
Pulsed Drain Current1
IDM
235
135
80
75
50
30
A
Max. Power Dissipation @ TC = 25°C
PD
280
W
Max. Power Dissipation @ TC = 100°C
PD
110
W
Linear Derating Factor Junction-to-Case
2.22
W/°C
Linear Derating Factor Junction-to-Ambient
.025
W/°C
-55 to +150
°C
275
°C
Operating and Storage Temp. Range
TJ, Tstg
Lead Temperature (1/16" from case for 10 sec.)
Notes: 1. Pulse Test: Pulse Width £ 300 msec, Duty Cycle £ 2%.
THERMAL RESISTANCE (MAXIMUM)
2. Package Pin Limitation: 35 Amps.
@ TA = 25 C
Junction-to-Case
RthJC
.45
° C/W
Junction-to-Ambient (Free Air Operation)
RthJA
40
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
Characteristic
Test Condition
Gate Threshold Voltage
VDS = VGS, ID = 250µA
Gate Source Leakage Current
VGS = ±20 VDC
Off State Drain-Source Leakage
VDS = VDSS x 0.8
VGS = 0V
3.1
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(TC = 25°C unless otherwise noted)
Symbol
Part No.
Min.
Max.
Units
VGS(th)
All
2.0
4.0
V
IGSS
All
±100
nA
TC = 25°C
IDSS
All
10
µA
TC = 125°C
IDSS
.10
mA
VGS = 0V, ID = 250 µA
VGS = 10V, ID = ID25 x 0.5
VDSS
RDS(on)
All
OM6050SJ
100
OM6051SJ
200
OM6052SJ
500
OM6053SJ
600
OM6054SJ
800
OM6055SJ
1000
V
OM6050SJ
.014
OM6051SJ
.030
OM6052SJ
.160
OM6053SJ
.230
OM6054SJ
.500
OM6055SJ
.800
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246