OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6055SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package Size 7 Die, High Energy Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS @ 25°C PART NUMBER OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ SCHEMATIC VDS 100 V 200 V 500 V 600 V 800 V 1000 V ID (Continuous) 100 A 55 A 30 A 25 A 18 A 10 A MECHANICAL OUTLINE ø.165 .155 1 RDS(on) .014 .030 .160 .230 .500 .800 .290 .260 .805 .795 .065 .055 .150 .950 .140 .930 .665 .645 1 2 3 .750 .500 3 .200 .200 2 .400 .065 ø.055 TO-267 4 11 R0 3.1 - 105 .160 3.1 OM6050SJ - OM6055SJ ABSOLUTE MAXIMUM RATINGS (T C Parameter Symbol = 25 C unless otherwise noted) OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ Unit Drain Source Voltage VDS 100 200 500 600 800 1000 V Drain Gate Voltage (RGS = 1.0 M ) VDGR 100 200 500 600 800 1000 V Continuous Drain Current @ TC = 25°C 2 ID 100 55 30 25 18 10 A Continuous Drain Current @ TC = 100°C 2 ID 43 23 13 10 7 4 A Pulsed Drain Current1 IDM 235 135 80 75 50 30 A Max. Power Dissipation @ TC = 25°C PD 280 W Max. Power Dissipation @ TC = 100°C PD 110 W Linear Derating Factor Junction-to-Case 2.22 W/°C Linear Derating Factor Junction-to-Ambient .025 W/°C -55 to +150 °C 275 °C Operating and Storage Temp. Range TJ, Tstg Lead Temperature (1/16" from case for 10 sec.) Notes: 1. Pulse Test: Pulse Width £ 300 msec, Duty Cycle £ 2%. THERMAL RESISTANCE (MAXIMUM) 2. Package Pin Limitation: 35 Amps. @ TA = 25 C Junction-to-Case RthJC .45 ° C/W Junction-to-Ambient (Free Air Operation) RthJA 40 ° C/W PRELIMINARY ELECTRICAL CHARACTERISTICS Characteristic Test Condition Gate Threshold Voltage VDS = VGS, ID = 250µA Gate Source Leakage Current VGS = ±20 VDC Off State Drain-Source Leakage VDS = VDSS x 0.8 VGS = 0V 3.1 Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage (TC = 25°C unless otherwise noted) Symbol Part No. Min. Max. Units VGS(th) All 2.0 4.0 V IGSS All ±100 nA TC = 25°C IDSS All 10 µA TC = 125°C IDSS .10 mA VGS = 0V, ID = 250 µA VGS = 10V, ID = ID25 x 0.5 VDSS RDS(on) All OM6050SJ 100 OM6051SJ 200 OM6052SJ 500 OM6053SJ 600 OM6054SJ 800 OM6055SJ 1000 V OM6050SJ .014 OM6051SJ .030 OM6052SJ .160 OM6053SJ .230 OM6054SJ .500 OM6055SJ .800 The above data is preliminary. Please contact factory for additional data and the dynamic and switching characteristics. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246