DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS • A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. 1 2 Top view MSB003 PINNING PIN DESCRIPTION Marking code: E1p. 1 base 2 emitter 3 collector Fig.1 SOT23. QUICK REFERENCED DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to Ts = 70 °C; note 1 − 300 mW fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C 1 − GHz F noise figure IC = 2 mA; VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C 4.5 − dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 25 mA ICM peak collector current − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 70 °C; note 1 Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. September 1995 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 260 K/W up to Ts = 70 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain CONDITIONS IE = 0; VCB = 10 V MIN. − TYP. − MAX. 10 IC = 2 mA; VCE = 1 V 25 90 − IC = 25 mA; VCE = 1 V 25 90 − IC = 2 mA; VCE = 5 V; f = 500 MHz − 1 − UNIT nA fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz − 1.6 − GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − 2 pF Cre feedback capacitance IC = 1 mA; VCE = 5 V; f = 1 MHz − 0.65 − pF F noise figure IC = 2 mA; VCE = 5 V; RS = 50 Ω; f = 500 MHz − 4.5 − dB September 1995 3 GHz Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 MEA395 100 MEA396 2.0 handbook, halfpage handbook, halfpage Cc (pF) hFE 1.6 1.2 50 0.8 0.4 0 0 0 10 20 IC (mA) 30 0 VCE = 1 V; Tj = 25 °C. Fig.2 10 20 VCB (V) 30 IE = ie = 0; f = 1 MHz; Tj = 25 °C. DC current gain as a function of collector current. Fig.3 MEA393 2 Collector capacitance as a function of collector-base voltage. MEA397 10 handbook, halfpage handbook, halfpage fT (GHz) F (dB) 1 5 0 0 0 10 20 IC (mA) 30 0 VCE = 5 V; f = 500 MHz; Tj = 25 °C. Fig.4 8 12 16 20 IC (mA) VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C. Transition frequency as a function of collector current. September 1995 4 Fig.5 4 Minimum noise figure as a function of collector current. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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