DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. • High gain • Internal pre-matched input. APPLICATIONS handbook, halfpage 8 • Hand-held radio equipment in common emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) communication systems. 5 c b PINNING - SOT96-1 e PIN SYMBOL 1 DESCRIPTION 1, 8 b base 2, 4, 5, 7 e emitter 3, 6 c collector 4 MAM227 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) Pulsed, class-AB 1800 6 2 ≥6 ≥50 1996 Apr 12 2 Philips Semiconductors Preliminary specification UHF power transistor BLT13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 1 A Ptot total power dissipation − 1 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Ts = 130 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS VALUE UNIT 45 K/W Ptot = 1 W; Ts = 130 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 10 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 1 mA 2.5 − V mA ICES collector leakage current VCE = 6 V; VBE = 0 − 0.1 hFE DC current gain VCE = 5 V; IC = 100 mA 30 150 Cc collector capacitance VCB = 6 V; IE = ie = 0; f = 1 MHz − 8 pF Cre feedback capacitance VCE = 6 V; IC = 0; f = 1 MHz − 6 pF 1996 Apr 12 3 Philips Semiconductors Preliminary specification UHF power transistor BLT13 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (note 1). MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Pulsed, class-AB; δ = 1 : 8; tp ≤ 5 ms 1800 6 2 2 Gp (dB) ηC (%) ≥6 ≥50 typ. 8.5 typ. 65 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 8.5 V; PL = 2 W; Ts ≤ 60 °C. MGD236 10 handbook, halfpage Gp (dB) Gp 100 ηC (%) 8 80 6 60 ηC 4 40 2 20 0 0 1 0 2 PL (W) 3 Pulsed, class-AB; δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 6 V; ICQ = 2 mA; tuned at PL = 2 W; Ts ≤ 60 °C. Fig.2 Power gain and collector efficiency as functions of load power; typical values. 1996 Apr 12 4 Philips Semiconductors Preliminary specification UHF power transistor BLT13 PACKAGE OUTLINE 4.0 3.8 5.0 4.8 handbook, full pagewidth S A 6.2 5.8 0.1 S 0.7 0.3 5 8 0.7 0.6 1.45 1.25 1 4 1.0 0.5 0.25 0.10 pin 1 index detail A 1.27 0.49 0.36 0.25 M (8x) Dimensions in mm. Fig.3 SOT96-1. 1996 Apr 12 5 1.75 1.35 0.25 0.19 0 to 8 MBC180 - 1 o Philips Semiconductors Preliminary specification UHF power transistor BLT13 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 12 6 Philips Semiconductors Preliminary specification UHF power transistor BLT13 NOTES 1996 Apr 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. (02) 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (01) 60 101-1256, Fax. (01) 60 101-1250 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. 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Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127061/1200/02/pp8 Document order number: Date of release: 1996 Apr 12 9397 750 00791