INTEGRATED CIRCUITS DATA SHEET UAA2082 Advanced pager receiver Product specification Supersedes data of 1995 Nov 27 File under Integrated Circuits, IC03 1996 Jan 15 Philips Semiconductors Product specification Advanced pager receiver UAA2082 FEATURES GENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2082 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and 900 MHz pager receivers for wide area digital paging systems, employing direct FM non-return-to-zero (NRZ) frequency shift keying (FSK). • High sensitivity • High dynamic range • Electronically adjustable filters on chip • Suitable for data rates up to 2400 bits/s The receiver design is based on the direct conversion principle where the input signal is mixed directly down to the baseband by a local oscillator on the signal frequency. Two complete signal paths with signals of 90° phase difference are required to demodulate the signal. All channel selectivity is provided by the built-in IF filters. The circuit makes extensive use of on-chip capacitors to minimize the number of external components. • Wide frequency offset and deviation range • Fully POCSAG compatible FSK receiver • Power on/off mode selectable by the chip enable input • Low supply voltage; low power consumption • 1-cell battery-low detection circuit • High integration level • Interfaces directly to the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. The battery monitoring circuit has an external sense input and a 1.1 V detection threshold for easy operation in a single-cell supply concept. APPLICATIONS The UAA2082 was designed to operate together with the PCA5000A, PCF5001 or PCD5003 POCSAG decoders, which contain a digital input filter for optimum call success rate. • Wide area paging • On-site paging • Telemetry • RF security systems • Low bit-rate wireless data links. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2082H LQFP32 plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm UAA2082U 28 pads naked die; see Fig.8 1996 Jan 15 DESCRIPTION 2 VERSION SOT358-1 Philips Semiconductors Product specification Advanced pager receiver UAA2082 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage 1.9 2.05 3.5 V IP supply current 2.3 2.7 3.2 mA IP(off) stand-by current − − 3 µA fi(RF) = 173 MHz − −126.5 −123.5 dBm fi(RF) = 470 MHz − −124.5 −121.5 dBm fi(RF) = 930 MHz − −120.0 −114.0 dBm Pi(ref) RF input sensitivity 3⁄ BER ≤ 100; ±4 kHz deviation; data rate 1200 bits/s; Tamb = 25 °C Pi(mix) mixer input sensitivity BER ≤ 100; fi(RF) = 470 MHz; − ±4 kHz deviation; data rate 1200 bits/s; Tamb = 25 °C −115.0 −110.0 dBm Vth detection threshold for battery LOW indicator Tamb = 25 °C 1.05 1.10 1.15 V Tamb = −10 to +70 °C 1.03 1.10 1.17 V Tamb operating ambient temperature −10 − +70 °C 1996 Jan 15 3⁄ 3 1996 Jan 15 4 C2 8.2 pF L1 43 nH 330 Ω 27 SENSE C15 27 pF 13 C4 1 nF VP low noise amplifier I low noise amplifier Q FREQUENCY MULTIPLIER 26 Vref C6 5 to 20 pF C8 8.2 pF C7 8.2 pF C10 C5 1 nF 22 pF 14 15 L7 25 C9 8.2 pF 33 nH R3 1.5 kΩ L6 GND2 MLC222 L4 150 nH 18 19 20 21 22 24 C12 5 to 20 pF 33 nH UAA2082H C11 22 pF 16 C19 1 nF MIXER Q C13 10 µF MIXER I C14 1 nF R4 2.2 kΩ R7 100 Ω BAND GAP REFERENCE FILTER ACTIVE FILTER ACTIVE L2 L3 22 nH 22 nH 12 FILTER GYRATOR FILTER GYRATOR 11 VP GND1 R1 10 RF pre-amplifier LIMITER I DEMODULATOR LIMITER Q 28 L8 27 nH BATTERY LOW INDICATOR 30 GND3 XTAL 31 CRYSTAL OSCILLATOR 32 C17 15 pF C16 13 to 50 pF R6 22 kΩ Fig.1 Block, test and application diagram drawn for LQFP32; fi(RF) = 172.941 MHz. C3 5 to 20 pF 8 7 6 R5 1.5 kΩ L5 150 nH R2 47 kΩ VP Advanced pager receiver Pins 9, 17, 23 and 29 are not connected. V i(RF) 5 4 TPI RE 3 DO IF testpoints TPQ C1 8.2 pF to decoder 1 2 TS L9 560 nH BLI C18 1 nF V bias(osc) handbook, full pagewidth C20 1 nF Philips Semiconductors Product specification UAA2082 BLOCK DIAGRAMS (173 MHz) 1996 Jan 15 5 28 2 TPQ TPI C3 R1 VP GND1 6 C4 1 nF 8 FILTER ACTIVE FILTER ACTIVE L3 L2 22 nH 22 nH 7 FILTER GYRATOR FILTER 19 R4 2.2 kΩ R7 100 Ω 1 nF 8.2 pF C8 C7 16 47 kΩ R2 VP C 19 1 nF C9 8.2 pF L4 150 nH 12 GND2 14 15 MLC223 L5 150 nH 13 MIXER Q 17 10 pF 11 C10 C11 10 MIXER I 10 pF 18 33 nH R3 1.5 kΩ L6 C12 5 to 20 pF 33 nH C13 10 µF L7 8.2 pF low noise amplifier I C6 5 to 20 pF C5 9 C14 1 nF low noise amplifier Q FREQUENCY MULTIPLIER 20 SENSE C15 27 pF UAA2082U 21 L8 27 nH Fig.2 Block, test and application diagram drawn for naked die; fi(RF) = 172.941 MHz. C2 8.2 pF 330 Ω 5 22 GND3 GYRATOR BATTERY LOW INDICATOR RF pre-amplifier 4 23 CRYSTAL OSCILLATOR 24 15 pF R6 22 kΩ V bias(osc) Advanced pager receiver L1 C1 43 nH 8.2 pF V i(RF) 5 to 20 pF 3 LIMITER I XTAL C17 LIMITER Q 25 TS R5 1.5 kΩ C16 13 to 50 pF DEMODULATOR 26 L9 560 nH 27 Vref 1 VP BAND GAP REFERENCE RE IF testpoints decoder DO BLI C18 1 nF C20 1 nF handbook, full pagewidth Philips Semiconductors Product specification UAA2082 Philips Semiconductors Product specification Advanced pager receiver Table 1 UAA2082 Tolerances of components shown in Figs 1 and 2 (notes 1 and 2) COMPONENT TOLERANCE (%) REMARK Inductances L1 ±5 Qmin = 100 at 173 MHz L2, L3, L6, L7 ±20 Qmin = 50 at 173 MHz; TC = (+25 to +125) × 10−6/K L4, L5 ±10 Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K L8 ±20 Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K L9 ±10 Qmin = 30 at 57 MHz; TC = (+25 to +125) × 10−6/K ±2 TC = +50 × 10−6/K C1, C2, C7, C8, C9, C15 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz C3, C6, C12 − TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz Resistors R1 to R7 Capacitors C4, C5, C14, C18, C19, C20 ±10 TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz C10, C11 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz C13 ±20 C16 − TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz C17 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz Notes 1. Recommended crystal: fXTAL = 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF (change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic resistance R1 < 40 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance: −5 × 10−6 to +15 × 10−6. 2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1, pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the tuning range will be reduced to an insufficient level. 1996 Jan 15 6 1996 Jan 15 7 C2 2.7 pF L1 12.5 nH C3 2.5 to 6 pF 8 7 6 31 LIMITER I DEMODULATOR LIMITER Q CRYSTAL OSCILLATOR 32 C17 15 pF C16 13 to 50 pF R1 VP GND1 L2 8 nH 12 FILTER GYRATOR FILTER GYRATOR 11 28 C4 1 nF L3 8 nH 13 26 low noise amplifier I low noise amplifier Q VP Vref C6 2.5 to 6 pF C13 10 µF 15 C19 1 nF L7 25 C9 2.7 pF L6 8 nH R3 820 Ω 18 19 20 21 22 24 L5 40 nH R2 47 kΩ VP MLC224 L4 40 nH GND2 C12 2.5 to 6 pF 8 nH UAA2082H MIXER Q C11 22 pF 16 MIXER I C8 2.7 pF C7 2.7 pF C10 C5 1 nF 22 pF 14 BAND GAP REFERENCE FILTER ACTIVE FILTER ACTIVE 27 R4 1.2 kΩ C14 1 nF FREQUENCY MULTIPLIER C15 3 to 10 pF SENSE L8 100 nH BATTERY LOW INDICATOR 30 GND3 XTAL R6 22 kΩ Fig.3 Block, test and application diagram drawn for LQFP32; fi(RF) = 469.95 MHz. 330 Ω 10 RF pre-amplifier R5 1.5 kΩ Advanced pager receiver Pins 9, 17, 23 and 29 are not connected. V i(RF) 5 4 TPI RE 3 DO IF testpoints TPQ C1 2.7 pF to decoder 2 1 L9 560 nH BLI TS C18 1 nF V bias(osc) handbook, full pagewidth C20 1 nF Philips Semiconductors Product specification UAA2082 BLOCK AND TEST DIAGRAMS (470 MHz) 1996 Jan 15 8 28 2 TPQ 1 C2 2.7 pF R1 VP GND1 6 L3 8 nH 7 FILTER GYRATOR FILTER C4 1 nF 8 FILTER ACTIVE FILTER ACTIVE L2 8 nH 19 R4 1.2 kΩ C14 1 nF 1 nF L7 C8 C7 16 47 kΩ R2 VP C 19 1 nF C9 2.7 pF L4 40 nH 12 GND2 14 15 MLC225 L5 40 nH 13 MIXER Q 17 22 pF 11 C10 C11 10 MIXER I 22 pF 18 2.7 pF 8 nH R3 820 Ω L6 C12 2.5 to 6 pF 8 nH 2.7 pF low noise amplifier I C6 2.5 to 6 pF C5 9 C13 10 µF low noise amplifier Q FREQUENCY MULTIPLIER 20 SENSE C15 3 to 10 pF UAA2082U 21 L8 100 nH Fig.4 Block, test and application diagram drawn for naked die; fi(RF) = 469.95 MHz. V i(RF) L1 12.5 nH 330 Ω 5 22 GND3 GYRATOR BATTERY LOW INDICATOR RF pre-amplifier 4 23 CRYSTAL OSCILLATOR 24 15 pF R6 22 kΩ V bias(osc) Advanced pager receiver C1 2.7 pF C3 2.5 to 6 pF 3 LIMITER I XTAL C17 LIMITER Q 25 TS R5 1.5 kΩ C16 13 to 50 pF DEMODULATOR 26 L9 560 nH 27 Vref TPI VP BAND GAP REFERENCE RE DO IF testpoints decoder BLI C18 1 nF C20 1 nF handbook, full pagewidth Philips Semiconductors Product specification UAA2082 1996 Jan 15 9 8 7 6 IF testpoints TPQ 4 RE 5 3 DO 2 1 L9 560 nH TPI to decoder BLI TS C18 1 nF 31 LIMITER I DEMODULATOR LIMITER Q CRYSTAL OSCILLATOR 32 C17 15 pF C16 13 to 50 pF GND1 12 FILTER GYRATOR FILTER GYRATOR 11 28 VP V i(RF) 13 26 low noise amplifier I low noise amplifier Q VP C5 1 nF 14 L10 12.5 nH C22 5.6 pF L7 25 L6 8 nH R3 820 Ω C23 2.5 to 6 pF 18 19 20 21 22 24 L5 40 nH R2 47 kΩ VP MLC226 L4 40 nH GND2 C12 2.5 to 6 pF 8 nH UAA2082H C21 5.6 pF 16 C19 1 nF MIXER Q C11 22 pF 15 MIXER I C13 10 µF C10 22 pF Vref BAND GAP REFERENCE FILTER ACTIVE FILTER ACTIVE 27 R4 1.2 kΩ C14 1 nF FREQUENCY MULTIPLIER C15 3 to 10 pF SENSE L8 100 nH BATTERY LOW INDICATOR 30 GND3 XTAL R6 22 kΩ Advanced pager receiver Fig.5 Mixer input sensitivity test circuit; fi(RF) = 469.95 MHz. 10 RF pre-amplifier R5 1.5 kΩ V bias(osc) handbook, full pagewidth C20 1 nF Philips Semiconductors Product specification UAA2082 Philips Semiconductors Product specification Advanced pager receiver Table 2 UAA2082 Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2) COMPONENT TOLERANCE (%) REMARK Inductances L1, L10 ±5 Qmin = 145 at 470 MHz L2, L3, L6, L7 ±20 Qmin = 50 at 470 MHz; TC = (+25 to +125) × 10−6/K L4, L5 ±10 Qmin = 40 at 470 MHz; TC = (+25 to +125) × 10−6/K L8 ±10 Qmin = 30 at 156 MHz; TC = (+25 to +125) × 10−6/K L9 ±10 Qmin = 40 at 78 MHz; TC = (+25 to +125) × 10−6/K ±2 TC = +50 × 10−6/K C1, C2, C7, C8, C9 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz C3, C6, C12, C23 − TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz Resistors R1 to R6 Capacitors C4, C5, C14, C18 to C22 ±10 TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz C10, C11 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz C13 ±20 C16 − TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz C17 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz Notes 1. Recommended crystal: fXTAL = 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF (change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance R1 < 30 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance: −5 × 10−6 to +15 × 10−6. 2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1, pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the tuning range will be reduced to an insufficient level. 1996 Jan 15 10 1996 Jan 15 11 C2 1.0 pF L1 5 nH C3 1.7 to 3 pF 8 7 6 120 Ω FILTER GYRATOR FILTER 27 13 VP C5 C6 1.7 to 3 pF 150 pF 14 C8 1.5 pF C7 1.5 pF L10 5 nH Vref C13 4.7 µF 15 C19 150 pF 25 C9 1.2 pF L6 3 nH R3 330 Ω 18 19 20 21 22 24 L5 12.5 nH R2 47 kΩ VP MLC227 L4 12.5 nH GND2 C12 1.7 to 3 pF L7 3 nH UAA2082H MIXER Q L11 5 nH 16 MIXER I Fig.6 Test circuit; fi(RF) = 930.50 MHz. C4 150 pF low noise amplifier I low noise amplifier Q FREQUENCY MULTIPLIER 26 R4 390 Ω BAND GAP REFERENCE FILTER ACTIVE FILTER ACTIVE L2 L3 3.5 nH 3.5 nH 12 28 BATTERY LOW INDICATOR 30 GYRATOR 11 VP GND1 R1 10 RF pre-amplifier LIMITER I DEMODULATOR LIMITER Q CRYSTAL OSCILLATOR 31 SENSE C14 150 pF Advanced pager receiver Pins 9, 17, 23 and 29 are not connected. V i(RF) 5 4 RE TPI 3 DO IF testpoints TPQ C1 1.2 pF to decoder 2 1 BLI TS 32 GND3 3.3 pF C15 handbook, full pagewidth Vi(OSC) L8 33 nH Philips Semiconductors Product specification UAA2082 BLOCK AND TEST DIAGRAM (930 MHz) Philips Semiconductors Product specification Advanced pager receiver Table 3 UAA2082 Tolerances of components shown in Fig.6 (note 1) COMPONENT TOLERANCE (%) REMARK Inductances L1 ±10 Qtyp = 150 at 930 MHz L2, L3, L6, L7 − microstrip inductor L4, L5 ±5 Qtyp = 100 at 930 MHz L8 ±10 Qtyp = 65 at 310 MHz L10, L11 ±10 Qtyp = 150 at 930 MHz ±2 TC = (0 ±200) × 10−6/K C1, C2, C7, C8, C9, C15 ±5 TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz C3, C6, C12 − TC = (0 ±200) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz C4, C5, C14, C19 ±10 TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz C13 ±20 Resistors R1 to R4 Capacitors Note 1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz. 1996 Jan 15 12 Philips Semiconductors Product specification Advanced pager receiver UAA2082 PINNING (LQFP32) battery LOW indicator output DO 3 data output handbook, halfpage 25 VO2MUL 2 26 RMUL BLI 27 SENSE test switch; connection to ground for normal operation 28 OSC 1 29 n.c. TS 30 GND3 DESCRIPTION 31 OSB PIN 32 OSE SYMBOL RE 4 receiver enable input TPI 5 IF test point; I channel TPQ 6 IF test point; Q channel TS 1 24 VO1MUL VI1RF 7 pre-amplifier RF input 1 BLI 2 23 n.c. 22 RGYR VI2RF 8 pre-amplifier RF input 2 DO 3 n.c. 9 not connected RE 4 RRFA 10 external emitter resistor for pre-amplifier 21 COM UAA2082H TPI 5 20 GND2 TPQ 6 19 VI2MQ pre-amplifier RF output 2 VI2RF 8 17 n.c. VO1RF 13 pre-amplifier RF output 1 I channel mixer input 1 n.c. 17 not connected VI1MQ 18 Q channel mixer input 1 VI2MQ 19 Q channel mixer input 2 GND2 20 ground 2 (0 V) COM 21 gyrator filter resistor; common line RGYR 22 gyrator filter resistor n.c. 23 not connected VO1MUL 24 frequency multiplier output 1 VO2MUL 25 frequency multiplier output 2 RMUL 26 external emitter resistor for frequency multiplier SENSE 27 battery LOW detector sense input OSC 28 oscillator collector n.c. 29 not connected GND3 30 ground 3 (0 V) OSB 31 oscillator base; crystal input OSE 32 oscillator emitter 1996 Jan 15 VP 16 VO1RF VI1MI VO2RF supply voltage I channel mixer input 2 n.c. 14 15 RRFA VP VI2MI VI1MI 16 12 14 VO2RF VI2MI 15 18 VI1MQ 13 7 12 VI1RF GND1 11 ground 1 (0 V) 9 11 10 GND1 Fig.7 Pin configuration; LQFP32. 13 MLC228 Philips Semiconductors Product specification Advanced pager receiver UAA2082 CHIP DIMENSIONS AND BONDING PAD LOCATIONS See Table 4 for bonding pad description and locations for x/y co-ordinates. y handbook, full pagewidth 24 23 22 21 20 19 25 18 26 17 27 16 28 15 3.83 mm UAA2082U 1 14 2 13 3 12 0 4 0 x 5 6 7 8 9 10 11 4.74 mm MLC229 Where: Pad number 1 (diameter 124 µm) Pad 124 µm x 124 µm Pad not used Pad 100 µm x 100 µm Pad 100 µm x 100 µm with reference point Chip area: 18.15 mm2 Chip thickness: 380 ±20 µm. Drawing not to scale. Fig.8 Bonding pad locations. 1996 Jan 15 14 Philips Semiconductors Product specification Advanced pager receiver Table 4 UAA2082 Bonding pad centre locations (dimensions in µm) SYMBOL PAD DESCRIPTION x y TPI 1 IF test point; I channel −32 1296 TPQ 2 IF test point; Q channel −32 1000 VI1RF 3 pre-amplifier RF input 1 −32 360 VI2RF 4 pre-amplifier RF input 2; note 1 0 0 RRFA 5 external emitter resistor for pre-amplifier 472 0 GND1 6 ground 1 (0 V) 1160 0 VO2RF 7 pre-amplifier RF output 2 1 688 0 VO1RF 8 pre-amplifier RF output 1 2 232 0 VP 9 supply voltage 2 760 0 VI2MI 10 I channel mixer input 2 3 608 0 VI1MI 11 I channel mixer input 1 4 216 0 VI1MQ 12 Q channel mixer input 1 4 216 360 VI2MQ 13 Q channel mixer input 2 4 216 960 GND2 14 ground 2 (0 V) 4 216 1360 COM 15 gyrator filter resistor; common line 4 216 2024 RGYR 16 gyrator filter resistor 4216 2496 VO1MUL 17 frequency multiplier output 1 4216 3136 VO2MUL 18 frequency multiplier output 2 4176 3456 RMUL 19 external emitter resistor for frequency multiplier 3668 3458 SENSE 20 battery LOW detector sense input 2952 3456 OSC 21 oscillator collector 2312 3456 GND3 22 ground 3 (0 V) 1832 3456 OSB 23 oscillator base; crystal input 1328 3456 OSE 24 oscillator emitter 432 3456 TS 25 test switch; connection to ground for normal operation −32 3456 BLI 26 battery LOW indicator output −32 3136 DO 27 data output −32 2512 RE 28 receiver enable input −32 2152 lower left corner of chip (typical values) −278 −186 Note 1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.8. 1996 Jan 15 15 Philips Semiconductors Product specification Advanced pager receiver UAA2082 INTERNAL CIRCUITS handbook, full pagewidth 32 1 31 30 29 28 27 26 25 n.c. 5 kΩ 2 VP 3 5 kΩ 4 150 kΩ 24 VP n.c. 23 22 21 UAA2082H 1 kΩ 1 kΩ 5 6 20 VP VP 19 7 8 18 n.c. 9 VP 150 Ω n.c. 10 11 12 13 14 15 17 16 MLC493 Fig.9 Internal circuits drawn for LQFP32. 1996 Jan 15 16 1996 Jan 15 1 kΩ 150 kΩ 1 28 1 kΩ 5 kΩ 2 27 5 kΩ 3 26 4 25 VP 17 6 23 7 VP 22 8 21 19 9 VP 10 UAA2082U 20 Fig.10 Internal circuits drawn for naked die. 5 150 Ω 24 11 18 12 17 13 VP 16 MLC231 14 VP 15 Advanced pager receiver handbook, full pagewidth Philips Semiconductors Product specification UAA2082 Philips Semiconductors Product specification Advanced pager receiver UAA2082 The resonant circuit at output pin OSC selects the second harmonic of the oscillator frequency. In other applications a different multiplication factor may be chosen. FUNCTIONAL DESCRIPTION The complete circuit consists of the following functional blocks as shown in Figs 1 to 6. At 930 MHz an external oscillator circuit is required to provide sufficient local oscillator signal for the frequency multiplier. Radio frequency amplifier The RF amplifier is an emitter-coupled pair driving a balanced cascode stage, which drives an external balanced tuned circuit. Its bias current is set by an external 300 Ω resistor R1 to typically 770 µA. With this bias current the optimum source resistance is 1.3 kΩ at VHF and 1.0 kΩ at UHF. At 930 MHz a higher bias current is required to achieve optimum gain. A value of 120 Ω is used for R1, which corresponds with a bias current of approximately 1.3 mA and an optimum source resistance of approximately 600 Ω.The capacitors C1 and C2 transform a 50 Ω source resistance to this optimum value. The output drives a tuned circuit with capacitive divider (C7, C8 and C9) to provide maximum power transfer to the phase-splitting network and the mixers. Frequency multiplier The frequency multiplier is an emitter-coupled pair driving an external balanced tuned circuit. Its bias current is set by external resistor R4 to typically 190 µA (173 MHz), 350 µA (470 MHz) and 1 mA (930 MHz). The oscillator signal is internally AC coupled to one input of the emitter-coupled pair while the other input is internally grounded via a capacitor. The frequency multiplier output signal between pins VO1MUL and VO2MUL drives the upper switching stages of the mixers. The bias voltage on pins VO1MUL and VO2MUL is set by external resistor R3 to allow sufficient voltage swing at the mixer outputs. The value of R3 depends on the operating frequency: 1.5 kΩ (173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz). Mixers The double balanced mixers consist of common base input stages and upper switching stages driven from the frequency multiplier. The 300 Ω input impedance of each mixer acts together with external components (C10, C11; L4, L5 respectively) as phase shifter/power splitter to provide a differential phase shift of 90 degrees between the I channel and the Q channel. At 930 MHz all external phase shifter components are inductive (L10, L11; L4, L5). Low noise amplifiers, active filters and gyrator filters The low noise amplifiers ensure that the noise of the following stages does not affect the overall noise figure. The following active filters before the gyrator filters reduce the levels of large signals from adjacent channels. Internal AC couplings block DC offsets from the gyrator filter inputs. The gyrator filters implement the transfer function of a 7th order elliptic filter. Their cut-off frequencies are determined by the 47 kΩ external resistor R2 between pins RGYR and COM. The gyrator filter output signals are available on IF test pins TPI and TPQ. Oscillator The oscillator is based on a transistor in common collector configuration. It is followed by a cascode stage driving a tuned circuit which provides the signal for the frequency multiplier. The oscillator transistor requires an external bias voltage Vbias(osc) (1.22 V typ.). The oscillator bias current (typically 250 µA) is determined by the 1.5 kΩ external resistor R5. The oscillator frequency is controlled by an external 3rd overtone crystal in parallel resonance mode. External capacitors between base and emitter (C17) and from emitter to ground (C16) make the oscillator transistor appear as having a negative resistance for small signals; this causes the oscillator to start. Inductance L9 connected in parallel with capacitor C16 to the emitter of the oscillator transistor prevents oscillation at the fundamental frequency of the crystal. 1996 Jan 15 Limiters The gyrator filter output signals are amplified in the limiter amplifiers to obtain IF signals with removed amplitude information. Demodulator The limiter amplifier output signals are fed to the demodulator. The demodulator output DO is going LOW or HIGH depending upon which of the input signals has a phase lead. 18 Philips Semiconductors Product specification Advanced pager receiver UAA2082 Battery LOW indicator Band gap reference The battery LOW indicator senses the supply voltage and sets its output HIGH when the voltage at input SENSE is less than Vth (typically 1.10 V). Low battery warning is available at BLI. The whole chip except the oscillator section can be powered-up and powered-down by enabling and disabling the band gap reference via the receiver enable pin RE. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Ground pins GND1, GND2 and GND3 connected together. SYMBOL PARAMETER MIN. MAX. UNIT VP supply voltage −0.3 +8.0 V Tstg storage temperature −55 +125 °C Tamb operating ambient temperature −10 +70 °C Ves electrostatic handling; note 1 pins VI1RF and VI2RF −1500 +2000 V pin RRFA −500 +2000 V pins VO1RF and VO2RF −2000 +250 V pins VP and OSB −500 +500 V pins OSC and OSE −2000 +500 V other pins −2000 +2000 V Note 1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor. 1996 Jan 15 19 Philips Semiconductors Product specification Advanced pager receiver UAA2082 DC CHARACTERISTICS VP = 2.05 V; Tamb = −10 to +70 °C (typical values at Tamb = 25 °C); measurements taken in test circuit Figs 1, 2, 3 or 4 with crystal at pin OSB disconnected; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage IP supply current IP(off) stand-by current Vbias(osc) oscillator bias voltage 1.9 2.05 3.5 V VRE = HIGH; fi(RF) = 173 and 470 MHz 2.3 2.7 3.2 mA VRE = HIGH; fi(RF) = 930 MHz 2.9 3.4 3.9 mA VRE = LOW − − 3 µA 1.20 1.22 1.24 V Receiver enable input (pin RE) VIH HIGH level input voltage 1.4 − VP V VIL LOW level input voltage 0 − 0.3 V IIH HIGH level input current VIH = VP = 3.5 V − − 20 µA VIL LOW level input current VIL = 0 V 0 − −1.0 µA Battery LOW indicator output (pin BLI) VOH HIGH level output voltage VSENSE < Vth; IBLI = −10 µA VP − 0.5 − − V VOL LOW level output voltage VSENSE > Vth; IBLI = +10 µA − − 0.5 V Vth voltage threshold for battery LOW indicator VP = 2.05 V; Tamb = 25 °C 1.05 1.10 1.15 V VP = 2.05 to 3.5 V; Tamb = −10 to +70 °C 1.03 1.10 1.17 V Demodulator output (pin DO) VOH HIGH level output voltage IDO = −10 µA VP − 0.5 − − V VOL LOW level output voltage IDO = +10 µA − 0.5 V 1996 Jan 15 20 − Philips Semiconductors Product specification Advanced pager receiver UAA2082 AC CHARACTERISTICS (173 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Figs 1 or 2; fi(RF) = 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT −126.5 −123.5 dBm Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) BER ≤ 3⁄100; note 1 − Tamb = −10 to +70 °C; note 2 − − −120.5 dBm VP = 1.9 V − − −117.5 dBm Tamb = 25 °C 69 72 − dB Tamb = −10 to +70 °C 67 − − dB − − 2 dB Mixers to demodulator αacs adjacent channel selectivity αci IF filter channel imbalance αc co-channel rejection − 4 7 dB αsp spurious immunity 50 60 − dB αim intermodulation immunity 55 60 − dB αbl blocking immunity 78 85 − dB foffset frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz ±2.0 − − kHz ±2.5 − − kHz ∆fdev deviation range (3 dB degradation in sensitivity) 2.5 − 7.0 kHz ton receiver turn-on time − − 5 ms ∆f > ±1 MHz; note 3 data valid after setting RE input HIGH; note 4 Notes 1. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 2. Capacitor C16 requires re-adjustment to compensate temperature drift. 3. ∆f is the frequency offset between the required signal and the interfering signal. 4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). 1996 Jan 15 21 Philips Semiconductors Product specification Advanced pager receiver UAA2082 AC CHARACTERISTICS (470 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Figs 3 or 4; fi(RF) = 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. −124.5 −121.5 UNIT Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) BER ≤ 3⁄100; note 1 − dBm Tamb = −10 to +70 °C; note 2 − − −118.5 dBm VP = 1.9 V − − −115.5 dBm BER ≤ 3⁄100; note 3 − −115.0 −110.0 dBm Tamb = 25 °C 67 70 − dB Mixer input Pi(mix) input sensitivity Mixers to demodulator αacs adjacent channel selectivity 65 − − dB αci IF filter channel imbalance − − 2 dB αc co-channel rejection − 4 7 dB αsp spurious immunity 50 60 − dB αim intermodulation immunity 55 60 − dB αbl blocking immunity 75 82 − dB foffset frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz ±2.0 − − kHz ±2.5 − − kHz ∆fdev deviation range (3 dB degradation in sensitivity) 2.5 − 7.0 kHz ton receiver turn-on time − − 5 ms Tamb = −10 to +70 °C ∆f > ±1 MHz; note 4 data valid after setting RE input HIGH; note 5 Notes 1. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 2. Capacitor C16 requires re-adjustment to compensate temperature drift. 3. Test circuit Fig.5. Pi(mix) is the maximum available power at the input of the test board. The bit error rate BER is measured using the test facility shown in Fig.12. 4. ∆f is the frequency offset between the required signal and the interfering signal. 5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). 1996 Jan 15 22 Philips Semiconductors Product specification Advanced pager receiver UAA2082 AC CHARACTERISTICS (930 MHz) VP = 2.05 V; Tamb = 25 °C; test circuit Fig.6; note 1; fi(RF) = 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz channel spacing; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Radio frequency input Pi(ref) input sensitivity (Pi(ref) is the maximum available power at the RF input of the test board) BER ≤ 3⁄100; note 2 − −120.0 −114.0 dBm VP = 1.9 V − − −108.0 dBm Tamb = 25 °C 60 69 − dB Mixers to demodulator αacs adjacent channel selectivity αc co-channel rejection − 5 10 dB αsp spurious immunity 40 60 − dB αim intermodulation immunity 53 60 − dB αbl blocking immunity 65 74 − dB foffset frequency offset range deviation f = ±4.0 kHz (3 dB degradation in sensitivity) deviation f = ±4.5 kHz ±2.0 − − kHz ±2.5 − − kHz ∆fdev deviation range (3 dB degradation in sensitivity) 2.5 − 7.0 kHz ton receiver turn-on time − − 5 ms ∆f > ±1 MHz; note 3 data valid after setting RE input HIGH; note 4 Notes 1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz and a level of −15 dBm. 2. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders. 3. ∆f is the frequency offset between the required signal and the interfering signal. 4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). 1996 Jan 15 23 Philips Semiconductors Product specification Advanced pager receiver UAA2082 TEST INFORMATION Tuning procedure for AC tests 1. Turn on the signal generator: fgen = fi(RF) + 4 kHz, no modulation, Vi(RF) = 1 mV (RMS). 2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF = 4 kHz Change the generator frequency to fgen = fi(RF) − 4 kHz and check that fIF is also 4 kHz. For a received input frequency fi(RF) = 172.941 MHz the crystal frequency is fXTAL = 57.647 MHz, while for fi(RF) = 469.950 MHz the crystal frequency is fXTAL = 78.325 MHz. For a received input frequency fi(RF) = 930.500 MHz an external oscillator signal must be used with fi(OSC) = 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see Table 1). 3. Set the signal generator to nominal frequency (fi(RF)) and turn on the modulation deviation ±4.0 kHz, 600 Hz square wave modulation, Vi(RF) = 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the receiver is tuned, to ensure Vo(IF) = 10 to 50 mV (p-p) on test pins TPI or TPQ. 4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI. 5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5). 6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on pin TPI. 7. Check that data signal appears on output pin DO and proceed with the AC test. AC test conditions Table 5 Definitions for AC test conditions (see Table 6) SIGNAL DESCRIPTION Modulated test signal 1 Frequency 172.941, 469.950 or 930.500 MHz Deviation ±4.0 kHz Modulation 1200 baud pseudo random bit sequence Rise time 250 ±25 µs (between 10% and 90% of final value) Modulated test signal 2 Deviation ±2.4 kHz Modulation 400 Hz sine wave Other definitions f1 frequency of signal generator 1 f2 frequency of signal generator 2 f3 frequency of signal generator 3 ∆fcs channel spacing (20 kHz) P1 maximum available power from signal generator 1 at the test board input P2 maximum available power from signal generator 2 at the test board input P3 maximum available power from signal generator 3 at the test board input Pi(ref) maximum available power at the test board input to give a Bit Error Rate (BER) ≤ 3⁄100 for the modulated test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters “AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)” 1996 Jan 15 24 Philips Semiconductors Product specification Advanced pager receiver Table 6 AC test conditions; notes 1 and 2 SYMBOL αa αc αsp αim αbl UAA2082 PARAMETER adjacent channel selectivity; Fig.11(b) CONDITIONS f2 = f1 ± ∆fCS generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB generator 2: modulated test signal 2 P2 = P1 + αa(min) co-channel rejection; Fig.11(b) f2 = f1 ± up to 3 kHz spurious immunity; Fig.11(b) intermodulation immunity; Fig.11(c) blocking immunity; Fig.11(b) generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB generator 2: modulated test signal 2 P2 = P1 − αc(max) f2 = 100 kHz to 2 GHz generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB generator 2: modulated test signal 2 P2 = P1 + αsp( min) f2 = f1 ± ∆fcs; f3 = f1 ± 2∆fcs generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB generator 2: unmodulated P2 = P1 + αim(min) generator 3: modulated test signal 2 P3 = P2 f2 = f1 ± 1 MHz generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB generator 2: modulated test signal 2 P2 = P1 + αbl(min) frequency offset range; Fig.11(a) deviation = ±4.0 kHz, f1 = fi(RF) ± 2 kHz (foffset(min)) ∆fdev deviation range; Fig.11(a) deviation = ±2.5 to ±7 kHz; (∆fdev(min) to ∆fdev(max)) ton receiver turn-on time; Fig.11(a) note 3 foffset TEST SIGNALS generator 1: modulated test signal 1 generator 1: modulated test signal 1 generator 1: modulated test signal 1 P1 = Pi(ref) + 3 dB P1 = Pi(ref) + 3 dB P1 = Pi(ref) + 10 dB Notes 1. The tests are executed without load on pins TPI and TPQ. 2. All minimum and maximum values correspond to a bit error rate (BER) ≤ 3⁄100 in the wanted signal (P1). 3. The BER measurement is started 5 ms (ton(max)) after VRE goes HIGH; BER is then measured for 100 bits (BER ≤ 3⁄100). 1996 Jan 15 25 Philips Semiconductors Product specification Advanced pager receiver handbook, full pagewidth (a) (b) UAA2082 GENERATOR 1 R s = 50 Ω GENERATOR 1 R s = 50 Ω DEVICE UNDER TEST BER TEST(1) FACILITY 50 Ω 2-SIGNAL POWER COMBINER DEVICE UNDER TEST BER TEST(1) FACILITY 50 Ω 3-SIGNAL POWER COMBINER DEVICE UNDER TEST BER TEST(1) FACILITY GENERATOR 2 R s = 50 Ω GENERATOR 1 R s = 50 Ω (c) GENERATOR 2 R s = 50 Ω MLC232 GENERATOR 3 R s = 50 Ω (a) One generator. (b) Two generators. (c) Three generators. (1) See Fig.12. Fig.11 Test configurations. handbook, full pagewidth recovered clock GENERATOR R s = 50 Ω DEVICE UNDER TEST DIGITAL FILTER CLOCK RECOVERY retimed Rx data 250 µs RISE TIME PRESET DELAY DATA COMPARATOR PSEUDO RANDOM SEQUENCE GENERATOR MASTER CLOCK MLC233 Fig.12 BER test facility. 1996 Jan 15 26 to error counter Philips Semiconductors Product specification Advanced pager receiver UAA2082 PRINTED-CIRCUIT BOARDS handbook, full pagewidth MBD562 Fig.13 PCB top view for LQFP32; test circuit Figs 1 and 3. 1996 Jan 15 27 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth MBD561 Fig.14 PCB bottom view for LQFP32; test circuit Figs 1 and 3. 1996 Jan 15 28 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth C19 R3 L7 L6 L5 V bosc VP R2 C14 C15 C20 C13 C9 C7 C8 C11 UAA2082H R6 C10 L8 L3 Vsense C6 C16 GND C12 L4 C4 C17 L2 XTAL L9 R1 R5 C18 TS BLI VIRF DO DO TPI TPQ RE MLC234 VEE = GND; VC = VP. Fig.15 PCB top view with components for LQFP32; test circuit Fig.3. 1996 Jan 15 29 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth C5 R4 C3 L1 C2 C1 MLC235 Fig.16 PCB bottom view with components for LQFP32; test circuit Fig.3. 1996 Jan 15 30 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth C19 R3 C23 L7 L6 L5 V bosc VP R2 C14 C15 C20 L4 C10 C12 C11 C21 UAA2082H R6 C13 C22 L8 Vsense C16 GND L10 C17 V i RF XTAL L9 R5 C18 TS BLI DO DO TPI TPQ RE MLC236 Fig.17 PCB top view with components for LQFP32; test circuit Fig.5. 1996 Jan 15 31 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth C5 R4 MLC237 Fig.18 PCB bottom view with components for LQFP32; test circuit Fig.5. 1996 Jan 15 32 Philips Semiconductors Product specification Advanced pager receiver UAA2082 book, full pagewidth GND C13 VP L5 L4 C9 L11 R2 R3 C12 L6 L10 UAA2082H C7 C19 L7 L3 C8 C4 L8 L2 C14 C6 R1 Vi(OSC) C15 TS L1 BLI DO C3 RE C1 TPI C2 TPQ MLC238 V i(RF) Fig.19 PCB top view with components for LQFP32; test circuit Fig.6. 1996 Jan 15 33 Philips Semiconductors Product specification Advanced pager receiver UAA2082 handbook, full pagewidth C5 R4 MLC239 Fig.20 PCB bottom view with components for LQFP32; test circuit Fig.6. 1996 Jan 15 34 Philips Semiconductors Product specification Advanced pager receiver UAA2082 PACKAGE OUTLINE LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm SOT358-1 c y X 24 A 17 25 16 ZE e Q E HE A A2 A 1 (A 3) wM θ bp Lp L pin 1 index 32 9 detail X 8 1 e ZD v M A wM bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp Q v w y mm 1.60 0.20 0.05 1.45 1.35 0.25 0.4 0.3 0.18 0.12 7.1 6.9 7.1 6.9 0.8 9.15 8.85 9.15 8.85 1.0 0.75 0.45 0.69 0.59 0.2 0.25 0.1 Z D (1) Z E (1) 0.9 0.5 0.9 0.5 θ Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 93-06-29 95-12-19 SOT358 -1 1996 Jan 15 EUROPEAN PROJECTION 35 o 7 0o Philips Semiconductors Product specification Advanced pager receiver UAA2082 If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1996 Jan 15 36 Philips Semiconductors Product specification Advanced pager receiver UAA2082 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jan 15 37 Philips Semiconductors Product specification Advanced pager receiver UAA2082 NOTES 1996 Jan 15 38 Philips Semiconductors Product specification Advanced pager receiver UAA2082 NOTES 1996 Jan 15 39 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. 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(02)92 0601 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands