PHILIPS UAA2080H

INTEGRATED CIRCUITS
DATA SHEET
UAA2080
Advanced pager receiver
Product specification
Supersedes data of 1995 Nov 27
File under Integrated Circuits, IC03
1996 Jan 15
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
FEATURES
GENERAL DESCRIPTION
• Wide frequency range: VHF, UHF and 900 MHz bands
The UAA2080 is a high-performance low-power radio
receiver circuit primarily intended for VHF, UHF and
900 MHz pager receivers for wide area digital paging
systems, employing direct FM non-return-to-zero (NRZ)
frequency shift keying (FSK).
• High sensitivity
• High dynamic range
• Electronically adjustable filters on chip
• Suitable for data rates up to 2400 bits/s
The receiver design is based on the direct conversion
principle where the input signal is mixed directly down to
the baseband by a local oscillator on the signal frequency.
Two complete signal paths with signals of 90° phase
difference are required to demodulate the signal.
All channel selectivity is provided by the built-in IF filters.
The circuit makes extensive use of on-chip capacitors to
minimize the number of external components.
• Wide frequency offset and deviation range
• Fully POCSAG compatible FSK receiver
• Power on/off mode selectable by the chip enable input
• Low supply voltage; low power consumption
• High integration level
• Interfaces directly to the PCA5000A, PCF5001 and
PCD5003 POCSAG decoders.
The UAA2080 was designed to operate together with the
PCA5000A, PCF5001 or PCD5003 POCSAG decoders,
which contain a digital input filter for optimum call success
rate.
APPLICATIONS
• Wide area paging
• On-site paging
• Telemetry
• RF security systems
• Low bit-rate wireless data links.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
UAA2080H
LQFP32
UAA2080T
SO28
UAA2080U
28 pads
1996 Jan 15
DESCRIPTION
VERSION
plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm
SOT358-1
plastic small outline package; 28 leads; body width 7.5 mm
SOT136-1
naked die; see Fig.9
2
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
1.9
2.05
3.5
V
IP
supply current
2.3
2.7
3.2
mA
IP(off)
stand-by current
−
−
3
µA
fi(RF) = 173 MHz
−
−126.5 −123.5 dBm
fi(RF) = 470 MHz
−
−124.5 −121.5 dBm
fi(RF) = 930 MHz
−
−120.0 −114.0 dBm
−
−115.0 −110.0 dBm
Pi(ref)
RF input sensitivity
3⁄
BER ≤ 100; ±4 kHz deviation;
data rate 1200 bits/s; Tamb = 25 °C
3⁄
BER ≤ 100; fi(RF) = 470 MHz;
±4 kHz deviation;
data rate 1200 bits/s; Tamb = 25 °C
Pi(mix)
mixer input sensitivity
Vth
detection threshold for battery
LOW indicator
1.95
2.05
2.15
V
Tamb
operating ambient temperature
−10
−
+70
°C
1996 Jan 15
3
1996 Jan 15
4
C2
8.2 pF
L1
43
nH
C3
5 to
20 pF 8
7
6
R1
VP
GND1
11
13
C4 1 nF
low noise
amplifier I
low noise
amplifier Q
FREQUENCY
MULTIPLIER
26
VP
Vref
C6
5 to
20 pF
C8
8.2 pF
C7
8.2 pF
C10
C5 1 nF 22 pF
14
15
L7
25
C9
8.2 pF
33 nH
R3
1.5 kΩ
L6
18
19
20
21
22
24
L5
150
nH
R2
47
kΩ
VP
MLC700
L4
150
nH
GND2
C12
5 to 20 pF
33 nH
UAA2080H
C11
22 pF
16
C19
1 nF
MIXER Q
C13
10 µF
MIXER I
C14
1 nF
R4
2.2 kΩ
R7
100 Ω
BAND GAP
REFERENCE
FILTER
ACTIVE
FILTER
ACTIVE
L2
L3
22 nH 22 nH
12
FILTER
GYRATOR
FILTER
GYRATOR
VP
27
TDC
C15
27 pF
Fig.1 Block, test and application diagram drawn for LQFP32; fi(RF) = 172.941 MHz.
330
Ω
10
RF pre-amplifier
LIMITER
I
DEMODULATOR
LIMITER
Q
28
BATTERY
LOW
INDICATOR
30
GND3
XTAL
31
CRYSTAL
OSCILLATOR
32
C17
15 pF
C16
13 to
50 pF
L8
27
nH
Advanced pager receiver
Pins 9, 17, 23 and 29 are not connected.
V i(RF)
5
4
RE
TPI
3
DO
IF testpoints TPQ
C1
8.2 pF
to
decoder
2
1
BLI
TS
L9
560
nH
R5
1.8
kΩ
handbook, full pagewidth
C18
1 nF
Philips Semiconductors
Product specification
UAA2080
BLOCK AND TEST DIAGRAMS (173 MHz)
BLI
XTAL
R7
100 Ω
C13
10 µF
L7
C14
1 nF
VP
C 19
1 nF
R3
1.5 kΩ
L6
33 nH
33 nH
C17
DO
decoder
C15
27
pF
L8
27
nH
R2
RE
R4
2.2 kΩ
TDC
15 pF
TS
28
27
26
25
BAND GAP
REFERENCE
VP
GND3
24
23
22
21
20
CRYSTAL
OSCILLATOR
DEMODULATOR
19
18
17
16
15
FREQUENCY
MULTIPLIER
BATTERY
LOW
INDICATOR
Vref
47 kΩ
C12
5 to 20 pF
V
P
UAA2080T
UAA2080U
GYRATOR
ACTIVE
FILTER
FILTER
GYRATOR
ACTIVE
FILTER
FILTER
Philips Semiconductors
L9
560 nH
R5
1.8 kΩ
C16
13 to
50 pF
Advanced pager receiver
1996 Jan 15
C18
1 nF
low noise
amplifier
Q
LIMITER
Q
5
LIMITER
I
low noise
amplifier
I
RF pre-amplifier
MIXER I
2
TPQ
IF testpoints
3
4
C3
5 to 20 pF
330
Ω
6
7
8
9
10
10 pF
R1
GND1
C4
V
P
1 nF
C5
1 nF
C6
5 to 20 pF
8.2 pF
C7
C8
12
10 pF
C10 C11
13
L4
150
nH
C9
8.2 pF
8.2 pF
Fig.2 Block, test and application diagram drawn for SO28 and naked die; fi(RF) = 172.941 MHz.
14
GND2
L5
150
nH
MLC701
Product specification
C2
8.2 pF
L3
L2
22 nH 22 nH
11
UAA2080
L1
C1
43 nH
8.2 pF
V i(RF)
5
handbook, full pagewidth
1
TPI
MIXER Q
Philips Semiconductors
Product specification
Advanced pager receiver
Table 1
UAA2080
Tolerances of components shown in Figs 1 and 2 (notes 1 and 2)
COMPONENT
TOLERANCE
(%)
REMARK
Inductances
L1
±5
Qmin = 100 at 173 MHz
L2, L3, L6, L7
±20
Qmin = 50 at 173 MHz; TC = (+25 to +125) × 10−6/K
L4, L5
±10
Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K
L8
±20
Qmin = 30 at 173 MHz; TC = (+25 to +125) × 10−6/K
L9
±10
Qmin = 30 at 57 MHz; TC = (+25 to +125) × 10−6/K
±2
TC = +50 × 10−6/K
C1, C2, C7, C8, C9, C15
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz
C3, C6, C12
−
TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz
Resistors
R1 to R7
Capacitors
C4, C5, C14, C18, C19
±10
TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz
C10, C11
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz
C13
±20
C16
−
TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz
C17
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz
Notes
1. Recommended crystal: fXTAL = 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF
(change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic
resistance R1 < 40 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:
−5 × 10−6 to +15 × 10−6.
2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.
1996 Jan 15
6
1996 Jan 15
7
C2
2.7 pF
L1
12.5
nH
C3
2.5 to
6 pF 8
7
6
31
R1
VP
GND1
L2
8 nH
12
FILTER
GYRATOR
FILTER
GYRATOR
11
28
C4 1 nF
low noise
amplifier I
low noise
amplifier Q
FREQUENCY
MULTIPLIER
26
R4
1.2 kΩ
VP
Vref
C6
2.5 to
6 pF
C13
10 µF
15
C19
1 nF
L7
25
C9
2.7 pF
L6
8 nH
R3
820 Ω
18
19
20
21
22
24
L5
40
nH
R2
47
kΩ
VP
MLC702
L4
40
nH
GND2
C12
2.5 to 6 pF
8 nH
UAA2080H
MIXER Q
C11
22 pF
16
MIXER I
C8
2.7 pF
C7
2.7 pF
C10
C5 1 nF 22 pF
14
BAND GAP
REFERENCE
FILTER
ACTIVE
FILTER
13
L3
8 nH
VP
27
TDC
C15
3 to
10 pF
ACTIVE
BATTERY
LOW
INDICATOR
30
GND3
XTAL
C14
1 nF
Fig.3 Block, test and application diagram drawn for LQFP32; fi(RF) = 469.95 MHz.
330
Ω
10
RF pre-amplifier
LIMITER
I
DEMODULATOR
LIMITER
Q
CRYSTAL
OSCILLATOR
32
C17
15 pF
C16
13 to
50 pF
L8
100
nH
Advanced pager receiver
Pins 9, 17, 23 and 29 are not connected.
V i(RF)
5
4
RE
TPI
3
DO
IF testpoints TPQ
C1
2.7 pF
to
decoder
2
1
BLI
TS
L9
560
nH
R5
1.8
kΩ
handbook, full pagewidth
C18
1 nF
Philips Semiconductors
Product specification
UAA2080
BLOCK AND TEST DIAGRAMS (470 MHz)
BLI
XTAL
C14
1 nF
C15
3 to
10 pF
L7
R3
820 Ω
L6
8 nH
8 nH
C13
10 µF
C 19
1 nF
C17
DO
decoder
VP
L8
100
nH
R2
RE
R4
1.2 kΩ
TDC
15 pF
TS
28
27
26
25
BAND GAP
REFERENCE
VP
GND3
24
23
22
21
20
CRYSTAL
OSCILLATOR
DEMODULATOR
19
18
17
16
15
FREQUENCY
MULTIPLIER
BATTERY
LOW
INDICATOR
Vref
47 kΩ
C12
2.5 to 6 pF
VP
UAA2080T
UAA2080U
GYRATOR
ACTIVE
FILTER
FILTER
GYRATOR
ACTIVE
FILTER
FILTER
Philips Semiconductors
L9
560 nH
R5
1.8 kΩ
C16
13 to
50 pF
Advanced pager receiver
1996 Jan 15
C18
1 nF
low noise
amplifier
Q
LIMITER
Q
8
LIMITER
I
low noise
amplifier
I
RF pre-amplifier
MIXER I
TPI
2
3
4
TPQ
C3
IF testpoints
2.5 to 6 pF
L1
12.5 nH
7
8
9
10
22 pF
R1
GND1
C2
2.7 pF
L3
8 nH
L2
8 nH
C4
VP
1 nF
C5
1 nF
C6
2.5 to 6 pF
2.7 pF
C7
C8
11
12
22 pF
C10 C11
L4
40
nH
C9
2.7 pF
2.7 pF
Fig.4 Block, test and application diagram drawn for SO28 and naked die; fi(RF) = 469.95 MHz.
13
14
GND2
L5
40
nH
MLC703
UAA2080
V i(RF)
330
Ω
6
Product specification
C1
2.7 pF
5
handbook, full pagewidth
1
MIXER Q
1996 Jan 15
9
6
8
7
5
4
TPI
RE
3
DO
IF testpoints TPQ
to
decoder
2
1
BLI
TS
L9
560
nH
31
LIMITER
I
DEMODULATOR
LIMITER
Q
CRYSTAL
OSCILLATOR
32
C17
15 pF
C16
13 to
50 pF
GND1
12
FILTER
GYRATOR
FILTER
GYRATOR
11
28
VP
27
TDC
VP
V i(RF)
13
low noise
amplifier I
low noise
amplifier Q
VP
C5
1 nF
14
L10
12.5 nH
C22
5.6 pF
L7
25
L6
8 nH
R3
820 Ω
C23
2.5 to 6 pF
18
19
20
21
22
24
L5
40
nH
R2
47
kΩ
VP
MLC704
L4
40
nH
GND2
C12
2.5 to 6 pF
8 nH
UAA2080H
C21
5.6 pF
16
C19
1 nF
MIXER Q
C11
22 pF
15
MIXER I
C13
10 µF
C10
22 pF
Vref
BAND GAP
REFERENCE
FILTER
ACTIVE
FILTER
26
R4
1.2 kΩ
C14
1 nF
FREQUENCY
MULTIPLIER
C15
3 to
10 pF
ACTIVE
BATTERY
LOW
INDICATOR
30
GND3
XTAL
L8
100
nH
Advanced pager receiver
Fig.5 Mixer input sensitivity test circuit; fi(RF) = 469.95 MHz.
10
RF pre-amplifier
R5
1.8
kΩ
handbook, full pagewidth
C18
1 nF
Philips Semiconductors
Product specification
UAA2080
Philips Semiconductors
Product specification
Advanced pager receiver
Table 2
UAA2080
Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2)
COMPONENT
TOLERANCE
(%)
REMARK
Inductances
L1, L10
±5
Qmin = 145 at 470 MHz
L2, L3, L6, L7
±20
Qmin = 50 at 470 MHz; TC = (+25 to +125) × 10−6/K
L4, L5
±10
Qmin = 40 at 470 MHz; TC = (+25 to +125) × 10−6/K
L8
±10
Qmin = 30 at 156 MHz; TC = (+25 to +125) × 10−6/K
L9
±10
Qmin = 40 at 78 MHz; TC = (+25 to +125) × 10−6/K
±2
TC = +50 × 10−6/K
C1, C2, C7, C8, C9
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz
C3, C6, C12, C23
−
TC = (−750 ±300) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz
Resistors
R1 to R5
Capacitors
C4, C5, C14, C18 to C22
±10
TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz
C10, C11
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 21 × 10−4 at 1 MHz
C13
±20
C16
−
TC = (−1700 ±500) × 10−6/K; tan δ ≤ 50 × 10−4 at 1 MHz
C17
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 26 × 10−4 at 1 MHz
Notes
1. Recommended crystal: fXTAL = 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF
(change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance
R1 < 30 Ω, ∆f = ±5 × 10−6 for Tamb = −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:
−5 × 10−6 to +15 × 10−6.
2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.
1996 Jan 15
10
1996 Jan 15
11
C2
1.0 pF
L1
5
nH
C3
1.7 to
3 pF 8
7
6
120
Ω
FILTER
GYRATOR
FILTER
V
P
27
TDC
13
VP
C5
C6
1.7 to
3 pF
150 pF
14
C8
1.5 pF
C7
1.5 pF
C13
4.7 µF
15
C19
150 pF
25
C9
1.2 pF
L6
3 nH
R3
330 Ω
18
19
20
21
22
24
L5
12.5
nH
R2
47
kΩ
VP
MLC705
L4
12.5
nH
GND2
C12
1.7 to 3 pF
L7
3 nH
UAA2080H
MIXER Q
L11
5 nH
16
MIXER I
L10
5 nH
Vref
Fig.6 Test circuit; fi(RF) = 930.50 MHz.
C4 150 pF
low noise
amplifier I
low noise
amplifier Q
FREQUENCY
MULTIPLIER
26
R4
390 Ω
BAND GAP
REFERENCE
FILTER
ACTIVE
FILTER
ACTIVE
L2
L3
3.5 nH 3.5 nH
12
28
BATTERY
LOW
INDICATOR
30
GYRATOR
11
VP
GND1
R1
10
RF pre-amplifier
LIMITER
I
DEMODULATOR
LIMITER
Q
CRYSTAL
OSCILLATOR
31
GND3
3.3 pF
C15
C14
150
pF
Advanced pager receiver
Pins 9, 17, 23 and 29 are not connected.
V i(RF)
5
4
TPI
RE
3
DO
IF testpoints TPQ
C1
1.2 pF
to
decoder
2
1
BLI
TS
32
Vi(OSC)
L8
33 nH
handbook, full pagewidth
Philips Semiconductors
Product specification
UAA2080
BLOCK AND TEST DIAGRAM (930 MHz)
Philips Semiconductors
Product specification
Advanced pager receiver
Table 3
UAA2080
Tolerances of components shown in Fig.6 (note 1)
COMPONENT
TOLERANCE
(%)
REMARK
Inductances
L1
±10
Qtyp = 150 at 930 MHz
L2, L3, L6, L7
−
microstrip inductor
L4, L5
±5
Qtyp = 100 at 930 MHz
L8
±10
Qtyp = 65 at 310 MHz
L10, L11
±10
Qtyp = 150 at 930 MHz
±2
TC = (0 ±200) × 10−6/K;
C1, C2, C7, C8, C9, C15
±5
TC = (0 ±30) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz
C3, C6, C12
−
TC = (0 ±200) × 10−6/K; tan δ ≤ 30 × 10−4 at 1 MHz
C4, C5, C14, C19
±10
TC = (0 ±30) × 10−6/K; tan δ ≤ 10 × 10−4 at 1 MHz
C13
±20
Resistors
R1 to R4
Capacitors
Note
1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz.
1996 Jan 15
12
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
PINNING (LQFP32)
pre-amplifier RF input 1
VI2RF
8
pre-amplifier RF input 2
n.c.
9
not connected
RRFA
10
external emitter resistor for
pre-amplifier
GND1
11
ground 1 (0 V)
VO2RF
12
pre-amplifier RF output 2
VO1RF
13
pre-amplifier RF output 1
VP
14
supply voltage
VI2MI
15
I channel mixer input 2
VI1MI
16
I channel mixer input 1
n.c.
17
not connected
VI1MQ
18
Q channel mixer input 1
VI2MQ
19
Q channel mixer input 2
GND2
20
ground 2 (0 V)
COM
21
gyrator filter resistor; common line
RGYR
22
gyrator filter resistor
n.c.
23
not connected
VO1MUL
24
frequency multiplier output 1
VO2MUL
25
frequency multiplier output 2
RMUL
26
external emitter resistor for
frequency multiplier
TDC
27
DC test point; no external
connection for normal operation
OSC
28
oscillator collector
n.c.
29
not connected
GND3
30
ground 3 (0 V)
OSB
31
oscillator base; crystal input
OSE
32
oscillator emitter
1996 Jan 15
25 VO2MUL
7
TS
1
24 VO1MUL
BLI
2
23 n.c.
DO
3
22 RGYR
RE
4
21 COM
UAA2080H
TPI
5
20 GND2
TPQ
6
19 VI2MQ
VI1RF
7
18 VI1MQ
VI2RF
8
17 n.c.
VI1MI 16
VI1RF
26 RMUL
IF test point; Q channel
27 TDC
6
14
TPQ
VI2MI 15
IF test point; I channel
28 OSC
receiver enable input
5
13
4
TPI
VP
RE
handbook, halfpage
VO1RF
data output
29 n.c.
3
12
DO
VO2RF
battery LOW indicator output
30 GND3
2
GND1 11
BLI
31 OSB
test switch; connection to ground
for normal operation
9
1
10
TS
32 OSE
DESCRIPTION
n.c.
PIN
RRFA
SYMBOL
Fig.7 Pin configuration; LQFP32.
13
MLC706
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
PINNING (SO28)
SYMBOL PIN
DESCRIPTION
TPI
1
IF test point; I channel
TPQ
2
IF test point; Q channel
VI1RF
3
pre-amplifier RF input 1
VI2RF
4
pre-amplifier RF input 2
RRFA
5
external emitter resistor for
pre-amplifier
GND1
6
ground 1 (0 V)
VO2RF
7
VO1RF
TPI
1
28 RE
pre-amplifier RF output 2
TPQ
2
27 DO
8
pre-amplifier RF output 1
VI1RF
3
26 BLI
VP
9
supply voltage
VI2RF
4
25 TS
VI2MI
10
I channel mixer input 2
RRFA
5
24 OSE
VI1MI
11
I channel mixer input 1
GND1
6
23 OSB
VI1MQ
12
Q channel mixer input 1
VI2MQ
13
Q channel mixer input 2
VO2RF
7
GND2
14
ground 2 (0 V)
COM
15
gyrator filter resistor; common line
RGYR
16
gyrator filter resistor
VI2MI 10
19
RMUL
VO1MUL
17
frequency multiplier output 1
VI1MI 11
18
VO2MUL
VO2MUL
18
frequency multiplier output 2
VI1MQ 12
17
VO1MUL
RMUL
19
external emitter resistor for frequency
multiplier
VI2MQ 13
16
RGYR
TDC
20
DC test point; no external connection
for normal operation
15
COM
OSC
21
oscillator collector
GND3
22
ground 3 (0 V)
OSB
23
oscillator base; crystal input
OSE
24
oscillator emitter
TS
25
test switch; connection to ground for
normal operation
BLI
26
battery LOW indicator output
DO
27
data output
RE
28
receiver enable input
1996 Jan 15
22 GND3
UAA2080T
VO1RF
8
21 OSC
VP
9
20 TDC
GND2 14
MBB972
Fig.8 Pin configuration; SO28.
14
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
CHIP DIMENSIONS AND BONDING PAD LOCATIONS
See Table 4 for bonding pad description and locations for x/y co-ordinates.
y
handbook, full pagewidth
24
23
22
21
20
19
25
18
26
17
27
16
28
15
3.83
mm
UAA2080U
1
14
2
13
3
12
0
4
0
x
5
6
7
8
9
10
11
4.74 mm
MLC707
Where:
Pad number 1 (diameter 124 µm)
Pad 124 µm x 124 µm
Pad not used
Pad 100 µm x 100 µm
Pad 100 µm x 100 µm with reference point
Chip area: 18.15 mm2.
Chip thickness: 380 ±20 µm.
Drawing not to scale.
Fig.9 Bonding pad locations.
1996 Jan 15
15
Philips Semiconductors
Product specification
Advanced pager receiver
Table 4
UAA2080
Bonding pad centre locations (dimensions in µm)
SYMBOL
PAD
DESCRIPTION
x
y
TPI
1
IF test point; I channel
−32
1296
TPQ
2
IF test point; Q channel
−32
1000
VI1RF
3
pre-amplifier RF input 1
−32
360
VI2RF
4
pre-amplifier RF input 2; note 1
0
0
RRFA
5
external emitter resistor for pre-amplifier
472
0
GND1
6
ground 1 (0 V)
1160
0
VO2RF
7
pre-amplifier RF output 2
1 688
0
VO1RF
8
pre-amplifier RF output 1
2 232
0
VP
9
supply voltage
2 760
0
VI2MI
10
I channel mixer input 2
3 608
0
VI1MI
11
I channel mixer input 1
4 216
0
VI1MQ
12
Q channel mixer input 1
4 216
360
VI2MQ
13
Q channel mixer input 2
4 216
960
GND2
14
ground 2 (0 V)
4 216
1360
COM
15
gyrator filter resistor; common line
4 216
2024
RGYR
16
gyrator filter resistor
4216
2496
VO1MUL
17
frequency multiplier output 1
4216
3136
VO2MUL
18
frequency multiplier output 2
4176
3456
RMUL
19
external emitter resistor for frequency multiplier
3668
3458
TDC
20
DC test point; no external connection for normal operation
2952
3456
OSC
21
oscillator collector
2312
3456
GND3
22
ground 3 (0 V)
1832
3456
OSB
23
oscillator base; crystal input
1328
3456
OSE
24
oscillator emitter
432
3456
TS
25
test switch; connection to ground for normal operation
−32
3456
BLI
26
battery LOW indicator output
−32
3136
DO
27
data output
−32
2512
RE
28
receiver enable input
−32
2152
lower left corner of chip (typical values)
−278
−186
Note
1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.9.
1996 Jan 15
16
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
INTERNAL CIRCUITS
handbook, full pagewidth
32
1
31
30
29
28
27
26
25
n.c.
2
5 kΩ
3
5 kΩ
4
150 k Ω
24
VP
VP
n.c.
23
8.15 k Ω
22
21
1 kΩ
1 kΩ
5
UAA2080H
6
20
VP
VP
19
7
8
18
n.c.
9
VP
150 Ω
n.c.
10
11
12
13
14
15
17
16
MGA788
Fig.10 Internal circuits drawn for LQFP32.
1996 Jan 15
17
1996 Jan 15
1
kΩ
150
kΩ
1
28
1
kΩ
5
kΩ
2
27
5
kΩ
3
26
VP
18
5
150 Ω
24
6
23
7
8.15
kΩ
VP
22
8
21
19
9
VP
10
UAA2080T
UAA2080U
20
11
18
12
17
13
VP
16
MBB974 - 1
14
VP
15
Advanced pager receiver
handbook, full pagewidth
Fig.11 Internal circuits drawn for SO28 and naked die.
4
25
Philips Semiconductors
Product specification
UAA2080
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
The resonant circuit at output pin OSC selects the second
harmonic of the oscillator frequency. In other applications
a different multiplication factor may be chosen.
FUNCTIONAL DESCRIPTION
The complete circuit consists of the following functional
blocks as shown in Figs 1 to 6.
At 930 MHz an external oscillator circuit is required to
provide sufficient local oscillator signal for the frequency
multiplier.
Radio frequency amplifier
The RF amplifier is an emitter-coupled pair driving a
balanced cascode stage, which drives an external
balanced tuned circuit. Its bias current is set by an external
300 Ω resistor R1 to typically 770 µA. With this bias
current the optimum source resistance is 1.3 kΩ at VHF
and 1.0 kΩ at UHF. At 930 MHz a higher bias current is
required to achieve optimum gain. A value of 120 Ω is
used for R1, which corresponds with a bias current of
approximately 1.3 mA and an optimum source resistance
of approximately 600 Ω.The capacitors C1 and C2
transform a 50 Ω source resistance to this optimum value.
The output drives a tuned circuit with capacitive divider
(C7, C8 and C9) to provide maximum power transfer to the
phase-splitting network and the mixers.
Frequency multiplier
The frequency multiplier is an emitter-coupled pair driving
an external balanced tuned circuit. Its bias current is set by
external resistor R4 to typically 190 µA (173 MHz), 350 µA
(470 MHz) and 1 mA (930 MHz). The oscillator signal is
internally AC coupled to one input of the emitter-coupled
pair while the other input is internally grounded via a
capacitor. The frequency multiplier output signal between
pins VO1MUL and VO2MUL drives the upper switching
stages of the mixers. The bias voltage on pins VO1MUL
and VO2MUL is set by external resistor R3 to allow
sufficient voltage swing at the mixer outputs. The value of
R3 depends on the operating frequency: 1.5 kΩ
(173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz).
Mixers
The double balanced mixers consist of common base
input stages and upper switching stages driven from the
frequency multiplier. The 300 Ω input impedance of each
mixer acts together with external components (C10, C11;
L4, L5 respectively) as phase shifter/power splitter to
provide a differential phase shift of 90 degrees between
the I channel and the Q channel. At 930 MHz all external
phase shifter components are inductive (L10, L11; L4, L5).
Low noise amplifiers, active filters and gyrator filters
The low noise amplifiers ensure that the noise of the
following stages does not affect the overall noise figure.
The following active filters before the gyrator filters reduce
the levels of large signals from adjacent channels. Internal
AC couplings block DC offsets from the gyrator filter
inputs.
The gyrator filters implement the transfer function of a 7th
order elliptic filter. Their cut-off frequencies are determined
by the 47 kΩ external resistor R2 between pins RGYR and
COM. The gyrator filter output signals are available on IF
test pins TPI and TPQ.
Oscillator
The oscillator is based on a transistor in common collector
configuration. It is followed by a cascode stage driving a
tuned circuit which provides the signal for the frequency
multiplier. The oscillator bias current (typically 250 µA) is
determined by the 1.8 kΩ external resistor R5.
The oscillator frequency is controlled by an external 3rd
overtone crystal in parallel resonance mode. External
capacitors between base and emitter (C17) and from
emitter to ground (C16) make the oscillator transistor
appear as having a negative resistance for small signals;
this causes the oscillator to start. Inductance L9 connected
in parallel with capacitor C16 to the emitter of the oscillator
transistor prevents oscillation at the fundamental
frequency of the crystal.
1996 Jan 15
Limiters
The gyrator filter output signals are amplified in the limiter
amplifiers to obtain IF signals with removed amplitude
information.
Demodulator
The limiter amplifier output signals are fed to the
demodulator. The demodulator output DO is going LOW or
HIGH depending upon which of the input signals has a
phase lead.
19
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
Battery LOW indicator
Band gap reference
The battery LOW indicator senses the supply voltage and
sets its output HIGH when the supply voltage is less than
Vth (typically 2.05 V). Low battery warning is available at
BLI.
The whole chip can be powered-up and powered-down by
enabling and disabling the band gap reference via the
receiver enable pin RE.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Ground pins GND1, GND2 and GND3 connected together.
SYMBOL
PARAMETER
VP
supply voltage
Ves
electrostatic handling (note 1)
MIN.
−0.3
MAX.
+8.0
UNIT
V
pins VI1RF and VI2RF
−1500
+2000
V
pin RRFA
−500
+2000
V
pins VO1RF and VO2RF
−2000
+250
V
pins VP and OSB
−500
+500
V
pins OSC and OSE
−2000
+500
V
other pins
−2000
+2000
V
Tstg
storage temperature
−55
+125
°C
Tamb
operating ambient temperature
−10
+70
°C
Note
1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor.
1996 Jan 15
20
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
DC CHARACTERISTICS
VP = 2.05 V; Tamb = −10 to +70 °C (typical values at Tamb = 25 °C); measurements taken in test circuit Figs 1, 2, 3 or 4
with crystal at pin OSB disconnected; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
IP
supply current
IP(off)
stand-by current
1.9
2.05
3.5
V
VRE = HIGH;
fi(RF) = 173 and 470 MHz
2.3
2.7
3.2
mA
VRE = HIGH; fi(RF) = 930 MHz
2.9
3.4
3.9
mA
VRE = LOW
−
−
3
µA
1.4
−
VP
V
Receiver enable input (pin RE)
VIH
HIGH level input voltage
VIL
LOW level input voltage
0
−
0.3
V
IIH
HIGH level input current
VIH = VP = 3.5 V
−
−
20
µA
VIL
LOW level input current
VIL = 0 V
0
−
−1.0
µA
Battery LOW indicator output (pin BLI)
VOH
HIGH level output voltage
VP < Vth; IBLI = −10 µA
VP − 0.5
−
−
V
VOL
LOW level output voltage
VP > Vth; IBLI = +10 µA
−
−
0.5
V
Vth
voltage threshold for
battery LOW indicator
1.95
2.05
2.15
V
Demodulator output (pin DO)
VOH
HIGH level output voltage
IDO = −10 µA
VP − 0.5
−
−
V
VOL
LOW level output voltage
IDO = +10 µA
−
−
0.5
V
1996 Jan 15
21
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
AC CHARACTERISTICS (173 MHz)
VP = 2.05 V; Tamb = 25 °C; test circuit Figs 1 or 2; fi(RF) = 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo
random bit sequence modulation (tr = 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz
channel spacing; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−126.5
−123.5
UNIT
Radio frequency input
Pi(ref)
input sensitivity (Pi(ref) is the
maximum available power at
the RF input of the test board)
BER ≤ 3⁄100; note 1
−
dBm
Tamb = −10 to +70 °C; note 2
−
−
−120.5
dBm
VP = 1.9 V
−
−
−117.5
dBm
Tamb = 25 °C
69
72
−
dB
Tamb = −10 to +70 °C
67
−
−
dB
Mixers to demodulator
αacs
adjacent channel selectivity
αci
IF filter channel imbalance
−
−
2
dB
αc
co-channel rejection
−
4
7
dB
αsp
spurious immunity
50
60
−
dB
αim
intermodulation immunity
55
60
−
dB
αbl
blocking immunity
78
85
−
dB
foffset
frequency offset range
deviation f = ±4.0 kHz
(3 dB degradation in sensitivity) deviation f = ±4.5 kHz
±2.0
−
−
kHz
±2.5
−
−
kHz
∆fdev
deviation range
(3 dB degradation in sensitivity)
2.5
−
7.0
kHz
ton
receiver turn-on time
−
−
5
ms
∆f > ±1 MHz; note 3
data valid after setting RE input
HIGH; note 4
Notes
1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.
2. Capacitor C16 requires re-adjustment to compensate temperature drift.
3. ∆f is the frequency offset between the required signal and the interfering signal.
4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).
1996 Jan 15
22
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
AC CHARACTERISTICS (470 MHz)
VP = 2.05 V; Tamb = 25 °C; test circuit Figs 3 or 4; fi(RF) = 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo
random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz
channel spacing; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−124.5
−121.5
UNIT
Radio frequency input
Pi(ref)
input sensitivity (Pi(ref) is the
maximum available power at
the RF input of the test board)
BER ≤ 3⁄100; note 1
−
dBm
Tamb = −10 to +70 °C; note 2
−
−
−118.5
dBm
VP = 1.9 V
−
−
−115.5
dBm
BER ≤ 3⁄100; note 3
−
−115.0
−110.0
dBm
Tamb = 25 °C
67
70
−
dB
Mixer input
Pi(mix)
input sensitivity
Mixers to demodulator
αacs
adjacent channel selectivity
65
−
−
dB
αci
IF filter channel imbalance
−
−
2
dB
αc
co-channel rejection
−
4
7
dB
αsp
spurious immunity
50
60
−
dB
αim
intermodulation immunity
55
60
−
dB
αbl
blocking immunity
75
82
−
dB
foffset
frequency offset range
deviation f = ±4.0 kHz
(3 dB degradation in sensitivity) deviation f = ±4.5 kHz
±2.0
−
−
kHz
±2.5
−
−
kHz
∆fdev
deviation range
(3 dB degradation in sensitivity)
2.5
−
7.0
kHz
ton
receiver turn-on time
−
−
5
ms
Tamb = −10 to +70 °C
∆f > ±1 MHz; note 4
data valid after setting RE input
HIGH; note 5
Notes
1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.
2. Capacitor C16 requires re-adjustment to compensate temperature drift.
3. Test circuit Fig.5. Pi(mix) is the maximum available power at the input of the test board. The bit error rate BER is
measured using the test facility shown in Fig.13.
4. ∆f is the frequency offset between the required signal and the interfering signal.
5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).
1996 Jan 15
23
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
AC CHARACTERISTICS (930 MHz)
VP = 2.05 V; Tamb = 25 °C; test circuit Fig.6 (note 1); fi(RF) = 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo
random bit sequence modulation (tr = 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz
channel spacing; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Radio frequency input
Pi(ref)
input sensitivity (Pi(ref) is the
maximum available power at
the RF input of the test board)
BER ≤ 3⁄100; note 2
−
−120.0
−114.0
dBm
VP = 1.9 V
−
−
−108.0
dBm
Tamb = 25 °C
60
69
−
dB
Mixers to demodulator
αacs
adjacent channel selectivity
αc
co-channel rejection
−
5
10
dB
αsp
spurious immunity
40
60
−
dB
αim
intermodulation immunity
53
60
−
dB
αbl
blocking immunity
65
74
−
dB
foffset
frequency offset range
deviation f = ±4.0 kHz
(3 dB degradation in sensitivity) deviation f = ±4.5 kHz
±2.0
−
−
kHz
±2.5
−
−
kHz
∆fdev
deviation range
(3 dB degradation in sensitivity)
2.5
−
7.0
kHz
ton
receiver turn-on time
−
−
5
ms
∆f > ±1 MHz; note 3
data valid after setting RE input
HIGH; note 4
Notes
1. The external oscillator signal Vi(OSC) has a frequency of fOSC = 310.1667 MHz and a level of −15 dBm.
2. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.
3. ∆f is the frequency offset between the required signal and the interfering signal.
4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).
1996 Jan 15
24
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
TEST INFORMATION
Tuning procedure for AC tests
1. Turn on the signal generator: fgen = fi(RF) + 4 kHz, no modulation, Vi(RF) = 1 mV (RMS).
2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF = 4 kHz
Change the generator frequency to fgen = fi(RF) − 4 kHz and check that fIF is also 4 kHz. For a received input
frequency fi(RF) = 172.941 MHz the crystal frequency is fXTAL = 57.647 MHz, while for fi(RF) = 469.950 MHz the
crystal frequency is fXTAL = 78.325 MHz. For a received input frequency fi(RF) = 930.500 MHz an external oscillator
signal must be used with fi(OSC) = 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see
Table 1).
3. Set the signal generator to nominal frequency (fi(RF)) and turn on the modulation deviation ±4.0 kHz, 600 Hz square
wave modulation, Vi(RF) = 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the
receiver is tuned, to ensure Vo(IF) = 10 to 50 mV (p-p) on test pins TPI or TPQ.
4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI.
5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input
sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5).
6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on
pin TPI.
7. Check that data signal appears on output pin DO and proceed with the AC test.
AC test conditions
Table 5
Definitions for AC test conditions (see Table 6)
SIGNAL
DESCRIPTION
Modulated test signal 1
Frequency
172.941, 469.950 or 930.500 MHz
Deviation
±4.0 kHz
Modulation 1200 baud pseudo random bit sequence
Rise time
250 ±25 µs (between 10% and 90% of final value)
Modulated test signal 2
Deviation
±2.4 kHz
Modulation 400 Hz sinewave
Other definitions
f1
frequency of signal generator 1
f2
frequency of signal generator 2
f3
frequency of signal generator 3
∆fcs
channel spacing (20 kHz)
P1
maximum available power from signal generator 1 at the test board input
P2
maximum available power from signal generator 2 at the test board input
P3
maximum available power from signal generator 3 at the test board input
Pi(ref)
maximum available power at the test board input to give a Bit Error Rate (BER) ≤ 3⁄100 for the modulated
test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters
“AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)”
1996 Jan 15
25
Philips Semiconductors
Product specification
Advanced pager receiver
Table 6
AC test conditions (notes 1 and 2)
SYMBOL
αa
αc
αsp
αim
αbl
UAA2080
PARAMETER
adjacent channel selectivity;
Fig.12(b)
CONDITIONS
f2 = f1 ± ∆fCS
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
generator 2: modulated test signal 2
P2 = P1 + αa(min)
co-channel rejection; Fig.12(b) f2 = f1 ± up to 3 kHz
spurious immunity; Fig.12(b)
intermodulation immunity;
Fig.12(c)
blocking immunity; Fig.12(b)
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
generator 2: modulated test signal 2
P2 = P1 − αc(max)
f2 = 100 kHz to 2 GHz
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
generator 2: modulated test signal 2
P2 = P1 + αsp( min)
f2 = f1 ± ∆fcs; f3 = f1 ± 2∆fcs
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
generator 2: unmodulated
P2 = P1 + αim(min)
generator 3: modulated test signal 2
P3 = P2
f2 = f1 ± 1 MHz
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
generator 2: modulated test signal 2
P2 = P1 + αbl(min)
frequency offset range;
Fig.12(a)
deviation = ±4.0 kHz, f1 = fi(RF) ± 2 kHz (foffset(min))
∆fdev
deviation range; Fig.12(a)
deviation = ±2.5 to ±7 kHz; (∆fdev(min) to ∆fdev(max))
ton
receiver turn-on time;
Fig.12(a)
note 3
foffset
TEST SIGNALS
generator 1: modulated test signal 1
generator 1: modulated test signal 1
generator 1: modulated test signal 1
P1 = Pi(ref) + 3 dB
P1 = Pi(ref) + 3 dB
P1 = Pi(ref) + 10 dB
Notes
1. The tests are executed without load on pins TPI and TPQ.
2. All minimum and maximum values correspond to a bit error rate (BER) ≤ 3⁄100 in the wanted signal (P1).
3. The BER measurement is started 5 ms (ton(max)) after VRE goes HIGH; BER is then measured for 100 bits
(BER ≤ 3⁄100).
1996 Jan 15
26
Philips Semiconductors
Product specification
Advanced pager receiver
handbook, full pagewidth
(a)
(b)
UAA2080
DEVICE
UNDER TEST
BER TEST(1)
FACILITY
50 Ω 2-SIGNAL
POWER
COMBINER
DEVICE
UNDER TEST
BER TEST(1)
FACILITY
50 Ω 3-SIGNAL
POWER
COMBINER
DEVICE
UNDER TEST
BER TEST(1)
FACILITY
GENERATOR 1
R s = 50 Ω
GENERATOR 1
R s = 50 Ω
GENERATOR 2
R s = 50 Ω
GENERATOR 1
R s = 50 Ω
(c)
GENERATOR 2
R s = 50 Ω
MLC708
GENERATOR 3
R s = 50 Ω
(a) One generator.
(b) Two generators.
(c) Three generators.
(1) See Fig.13.
Fig.12 Test configurations.
handbook, full pagewidth
recovered clock
GENERATOR
R s = 50 Ω
DEVICE
UNDER TEST
DIGITAL
FILTER
CLOCK
RECOVERY
retimed
Rx data
250 µs
RISE TIME
PRESET
DELAY
DATA
COMPARATOR
PSEUDO
RANDOM
SEQUENCE
GENERATOR
MASTER
CLOCK
MLC233
Fig.13 BER test facility.
1996 Jan 15
27
to error
counter
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
PRINTED-CIRCUIT BOARDS
handbook, full pagewidth
MBD562
Fig.14 PCB top view for LQFP32; test circuit Figs 1 and 3.
1996 Jan 15
28
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
MBD561
Fig.15 PCB bottom view for LQFP32; test circuit Figs 1 and 3.
1996 Jan 15
29
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
C19
R3
L7
L6
L5
R2
C14
C15
VP
C12
L4
C9
C7
C8
C11
UAA2080H
C10
L8
L3
C6
C13
C16
GND
XTAL
C4
C17
L2
L9
R1
R5
C18
TS
BLI
VIRF
DO
DO
TPI
TPQ
RE
MLC709
VEE = GND; VC = VP.
Fig.16 PCB top view with components for LQFP32; test circuit Fig.3.
1996 Jan 15
30
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
C5
R4
C3
L1
C2
C1
MLC235
Fig.17 PCB bottom view with components for LQFP32; test circuit Fig.3.
1996 Jan 15
31
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
MBD565
Fig.18 PCB top view for SO28; test circuit Figs 2 and 4.
1996 Jan 15
32
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
MBD567
Fig.19 PCB bottom view for SO28; test circuit Figs 2 and 4.
1996 Jan 15
33
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
VP
GND
GND
C13
OPS
BI
DO
RE
VP
C14
DATA
OUT
C18
R5
XL1
C19 L7
C17
L8
C16
C15
R3
L6
C12
R2
UAA2080T
C11 L4
RF IN
L3
TPQ
TPI
C4
L2 C8
L5
C9
C10
C7
MBD566
VEE = GND; VCC = VP; BI = BLI; OPS = TS.
Fig.20 PCB top view with components for SO28; test circuit Fig.4.
1996 Jan 15
34
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
SHORT
R4
C5
R1
L1
C3
C2
C1
MBD568
Fig.21 PCB bottom view with components for SO28; test circuit Fig.4.
1996 Jan 15
35
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
C19
R3
C23
L7
L6
L5
R2
C14
C15
L10
L4
C10
C12
C11
VP
C21
C22
UAA2080H
L8
C13
C16
GND
C17
V i(RF)
XTAL
L9
R5
C18
TS
BLI
DO
DO
TPI
TPQ
RE
MLC710
Fig.22 PCB top view with components for LQFP32; test circuit Fig.5.
1996 Jan 15
36
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
C5
R4
MLC237
Fig.23 PCB bottom view with components for LQFP32; test circuit Fig.5.
1996 Jan 15
37
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
ok, full pagewidth
GND
C13
VP
L5
L4
C9
L11
R2
R3
C12
L6
L10
UAA2080H
C7
C19
L7
L3
C8
C4
L8
L2
C14
C6
R1
Vi(OSC)
C15
TS
L1
BLI
DO
C3
RE
C1
TPI
C2
TPQ
MLC711
V i(RF)
Fig.24 PCB top view with components for LQFP32; test circuit Fig.6.
1996 Jan 15
38
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
handbook, full pagewidth
C5
R4
MLC239
Fig.25 PCB bottom view with components for LQFP32; test circuit Fig.6.
1996 Jan 15
39
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
PACKAGE OUTLINES
LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm
SOT358-1
c
y
X
24
A
17
25
16
ZE
e
Q
E HE
A A2 A
1
(A 3)
wM
θ
bp
Lp
L
pin 1 index
32
9
detail X
8
1
e
ZD
v M A
wM
bp
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
Q
v
w
y
mm
1.60
0.20
0.05
1.45
1.35
0.25
0.4
0.3
0.18
0.12
7.1
6.9
7.1
6.9
0.8
9.15
8.85
9.15
8.85
1.0
0.75
0.45
0.69
0.59
0.2
0.25
0.1
Z D (1) Z E (1)
0.9
0.5
0.9
0.5
θ
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
93-06-29
95-12-19
SOT358 -1
1996 Jan 15
EUROPEAN
PROJECTION
40
o
7
0o
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
SO28: plastic small outline package; 28 leads; body width 7.5 mm
SOT136-1
D
E
A
X
c
y
HE
v M A
Z
15
28
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
14
e
bp
0
detail X
w M
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
18.1
17.7
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.71
0.69
0.30
0.29
0.419
0.043
0.050
0.055
0.394
0.016
inches
0.043
0.039
0.01
0.01
Z
(1)
0.9
0.4
0.035
0.004
0.016
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT136-1
075E06
MS-013AE
1996 Jan 15
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
41
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
SOLDERING
SO
Introduction
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
METHOD (LQFP AND SO)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all LQFP and
SO packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
LQFP
Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
1996 Jan 15
42
Philips Semiconductors
Product specification
Advanced pager receiver
UAA2080
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jan 15
43
Philips Semiconductors – a worldwide company
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252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991
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Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-2724825
SCDS47
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands