PHILIPS UAA3220

INTEGRATED CIRCUITS
DATA SHEET
UAA3220TS
Frequency Shift Keying
(FSK)/Amplitude Shift Keying
(ASK) receiver
Product specification
Supersedes data of 1998 April 10
File under Integrated Circuits, IC01
1999 Jan 22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
FEATURES
GENERAL DESCRIPTION
• Low cost single-chip ASK or FSK receiver
The UAA3220TS is a fully integrated single-chip receiver,
primarily intended for use in VHF and UHF systems.
It supports both Amplitude Shift Keying (ASK) and
Frequency Shift Keying (FSK) demodulation.
By connecting DEMO1 (pin 10) to ground during
realisation of the receiver module the UAA3220TS works
as an ASK receiver (see Fig.10). By connecting pin 10 as
shown in Fig.9 the UAA3220TS works as an FSK receiver.
The UAA3220TS incorporates a crystal stabilized local
oscillator, frequency multiplier, balanced mixer, post mixer
amplifier, limiter, Received Signal Strength Indicator
(RSSI), FSK demodulator, data filter, data slicer and
power down circuit.
• Superheterodyne architecture with high integration level
• Few external low cost components and crystal required
• Wide supply voltage range
• Low power consumption
• Wide frequency range, 250 to 920 MHz
• High sensitivity
• IF bandwidth determined by application
• High selectivity
• Automotive temperature range
• SSOP24 package.
Applications
• Keyless entry systems
• Car alarm systems
• Remote control systems
• Security systems
• Telemetry systems
• Wireless data transmission
• Domestic appliance.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2.7
−
5.5
V
operating mode on;
VPWD = 0 V
2.8
4.3
5.8
mA
operating mode off;
VPWD = VCC
−
3
30
µA
fi(RF) = 433.92 MHz; FSK mode
ASK mode
Pi(max)(ASK)
maximum input power
BER ≤ 3%
−22
−16
−10
dBm
Φi(ASK)
sensitivity into pin MIXIN
fi(RF) = 433.92 MHz; BER ≤ 3%
−
−119
−113
dBm
Pi(max)(FSK)
maximum input power
BER ≤ 3%
−6
0
+1
dBm
Φi(FSK)
sensitivity into pin MIXIN
fi(RF) = 433.92 MHz; BER ≤ 3%
−
−103
−100
dBm
FSK mode
1999 Jan 22
2
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
UAA3220TS
DESCRIPTION
SSOP24
VERSION
SOT340-1
plastic shrink small outline package; 24 leads; body width 5.3 mm
BLOCK DIAGRAM
MGND
MIXIN
handbook,
full pagewidth
24
FA VCCI LIN
23
22
21
RSSI CPC
LFB
20
18
19
CPB
17
CPA
16
DATA
CGND
14
13
15
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
+
DATA SLICER
−
OSCILLATOR
1
×2/×3
2
3
4
5
OGND OSE
OSB
VCC
OSC
MULTIPLIER
×3
6
7
8
BIAS
9
10
11
PWD
DEMO1
DEMO2
12
MGM742
TEM TN
TP
Fig.1 Block diagram.
1999 Jan 22
3
GND
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PINNING
SYMBOL
PIN
DESCRIPTION
OGND
1
oscillator ground
OSE
2
oscillator emitter
OSB
3
oscillator base
VCC
4
positive supply voltage
OSC
5
oscillator collector
TEM
6
frequency multiplier emitter resistor
TN
7
TP
handbook, halfpage
OGND 1
24 MGND
OSE 2
23 MIXIN
frequency multiplier negative output
OSB 3
22 FA
8
frequency multiplier positive output
VCC 4
21 VCCI
PWD
9
power down control input
OSC 5
20 LIN
DEMO1
10
FM demodulator 1, ASK/FSK switch
TEM 6
DEMO2
11
FM demodulator 2
GND
12
general ground
CGND
13
comparator ground
DATA
14
data output
CPA
15
CPB
19 LFB
UAA3220TS
TN 7
18 RSSI
TP 8
17 CPC
PWD 9
16 CPB
comparator input A
DEMO1 10
15 CPA
16
comparator input B
DEMO2 11
14 DATA
CPC
17
comparator input C
GND 12
13 CGND
RSSI
18
RSSI output
LFB
19
limiter feedback
LIN
20
limiter input
VCCI
21
IF amplifier positive supply voltage
FA
22
IF amplifier output
MIXIN
23
mixer input
MGND
24
mixer ground
1999 Jan 22
MGM743
Fig.2 Pin configuration.
4
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
FUNCTIONAL DESCRIPTION
Limiter
Mixer
The limiter is a single-ended input multiple stage amplifier
with high total gain. Amplifier stability is achieved by
means of an external DC feedback capacitor (C21), which
is also used to determine the lower limiter cut-off
frequency. An RSSI signal proportional to the limiter input
signal is provided. Figure 3 shows the DC voltage at pin 18
(RSSI) as a function of the input voltage (RMS value) at
pin 20 (LIN). It also gives the typical IF of 10.7 MHz.
The lower knee of the level curve (see Fig.3) is determined
by the effective noise bandwidth and is, consequently,
slightly higher.
The mixer is a single-balanced emitter-coupled mixer with
internal biasing. Matching of the RF source impedance to
the mixer input requires an external matching network.
Oscillator
The oscillator is based on a transistor connected in
common collector configuration followed by a cascode
stage driving a tuned circuit. The voltage at this tuned
circuit drives the frequency multiplier. The bias current of
the oscillator is set by an off-chip resistor (R40 in the
application diagram of Fig.9) to a typical value of 260 µA at
433.92 MHz (R40 = 1.8 kΩ). The oscillator frequency is
controlled by an off-chip overtone crystal (X40). Off-chip
capacitors between base and emitter (C42) and ground
(C41) make the oscillator transistor appear as having
negative resistance at small signal levels. This causes the
oscillator to start. A parallel resonance circuit (L40 and
C41) connected to the emitter of the oscillator transistor
prevents oscillation at the fundamental frequency of the
crystal. The LC tank circuit at the output of the oscillator is
used to select either the fundamental, the second or the
third harmonic of the oscillator frequency.
IF filter
IF filtering with high selectivity is realized by means of an
external ceramic filter (X20), which feeds the IF from the
PMA to the limiter.
FM demodulator
Coming from the limiter the FSK signal is fed differential to
the input of the FM demodulator. After buffering the signal
is fed to a phase detector. The phase shift is generated by
an external LC combination connected to DEMO1 (pin 10)
and DEMO2 (pin 11). The baseband signal is coupled out
single ended via an output buffer and is fed to the FSK
input of the ASK/FSK switch.
Frequency multiplier
The frequency multiplier is an emitter-coupled transistor
pair driving an off-chip balanced tuned circuit. The bias
current of this emitter coupled pair is set by an off-chip
resistor (R50) to a typical value of 350 µA at 433.92 MHz
(R50 = 1.2 kΩ). The oscillator output signal is AC-coupled
to one of the inputs of the emitter-coupled pair. The other
input is connected to ground via an on-chip capacitor.
The output voltage of the frequency multiplier drives the
switching stage of the mixer. The bias voltage at this point
is set by an off-chip resistor (R51) to allow sufficient
voltage swing at the mixer outputs.
ASK/FSK switch
The selection of either ASK or FSK reception will be done
by the DEMO1 (pin 10). Grounding this pin to 0 V will
switch the IC to ASK mode. Additional the FM demodulator
and parts of the data slicer will be switched off. In FSK
mode DEMO1 (pin 10) is connected to DEMO2 (pin 11)
via a LC combination (see Fig.9).
Data filters
After demodulation a two-stage data filtering circuit is
provided in order to suppress unwanted frequency
components. Two RC low-pass filters with on-chip
resistors are provided which are separated by a buffer
stage.
Post mixer amplifier
The Post Mixer Amplifier (PMA) is a differential input,
single-ended output amplifier. Amplifier gain is provided in
order to reduce the influence of the limiter noise figure on
the total noise figure.
1999 Jan 22
5
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Data slicer
RSSI buffer
Data detection is provided by means of a level comparator
with adaptive slice reference. After the first data filter stage
the pre-filtered data is split into two paths. One passes the
second data filter stage and is fed to the positive
comparator input. The other path is fed to an integration
circuit with a large time constant in order to derive the
average value (DC component) as an adaptive slice
reference which is presented to the negative comparator
input. The internal buffer provides 13 dB AC voltage gain.
The adaptive reference allows to detect the received data
over a large range of noise floor levels. The integration
circuit consists of a simple RC low-pass filter with on-chip
resistors. The data slicer output is designed with internal
pull-up.
The RSSI buffer is an amplifier with a voltage gain of 0 dB.
At FSK receive mode the RSSI output provides a field
strength indication. It has an output impedance of 10 kΩ.
Figure 3 shows the level curve (RSSI curve) as a function
of the limiter input voltage (RMS value).
MGM744
1.55
handbook, full pagewidth
VRSSI
(V)
1.45
(1)
(2)
1.35
(3)
1.25
1.15
10-7
10-6
10-5
10-4
10-3
(1) Tamb = 85 °C.
(2) Tamb = 27 °C.
(3) Tamb = −40 °C.
Fig.3 Level curve VRSSI as a function of VLIN(rms).
1999 Jan 22
6
10-2
-1
VLIN(rms) (V) 10
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.3
+8.0
V
Pi(max)
absolute maximum input power
−
3
dBm
Tamb
operating ambient temperature
−40
+85
°C
Tstg
storage temperature
−55
+125
°C
Ves
electrostatic handling
pins 3 and 6
−50
+50
V
pin 2
−100
+100
V
pin 5
−250
+150
V
pin 23
−200
+250
V
all other pins
−250
+250
V
note 1
Note
1. Machine model: C = 200 pF, R = 0 Ω and L = 0.75 µH; pins are connected to GND and VCC.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1999 Jan 22
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
7
VALUE
UNIT
125
K/W
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
DC CHARACTERISTICS
VCC = 2.7 V; Tamb = 25 °C; for application diagram see Figs 9 and 10; crystal disconnected; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VCC
supply voltage
ICC
supply current
VPWD
IPWD
voltage on pin PWD
current into pin PWD
2.7
−
5.5
V
FSK demodulation;
note 3
2.8
4.3
5.8
mA
ASK demodulation;
note 4
2.5
3.7
4.9
mA
operating mode off;
VPWD = VCC
−
3
30
µA
operating mode on
(receiving mode)
0
−
300
mV
operating mode off
(sleep mode)
VCC − 0.3 −
VCC
V
operating mode on
(receiving mode);
VPWD = 0 V
−30
−10
−3
µA
operating mode off
(sleep mode);
VPWD = VCC
−
2
15
µA
operating mode on;
VPWD = 0 V; notes 1 and 2
Oscillator
VOSE
DC voltage at pin 2
independent of oscillator
0.33
0.38
0.43
V
VOSB
DC voltage at pin 3
independent of oscillator
1.05
1.15
1.25
V
VTEM
DC voltage at pin 6
independent of oscillator
0.33
0.39
0.45
V
VTN,TP
DC voltage at pins 7 and 8
independent of oscillator
2.01
2.21
2.41
V
DC voltage at pin 23
independent of oscillator
0.68
0.78
0.88
V
DC voltage at pin 22
independent of oscillator
1.10
1.25
1.40
V
VLIN
DC voltage at pin 20
independent of oscillator
1.85
1.95
2.05
V
VLFB
DC voltage at pin 19
independent of oscillator
1.85
1.95
2.05
V
VRSSI
DC voltage at pin 18
independent of oscillator
1.00
1.16
1.32
V
Multiplier
Mixer
VMIXIN
Post mixer amplifier
VFA
Limiter
1999 Jan 22
8
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
SYMBOL
PARAMETER
UAA3220TS
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Demodulator
VDEMO1,2
DC voltage at pins 10 and 11
VDEMO1(ASK)
DC voltage at pin 10 to switch in
ASK mode
independent of oscillator;
note 5
2.00
2.24
2.48
V
0
−
300
mV
Data filter and slicer
VCPA,CPB,CPC
DC voltage at pins 15, 16 and 17
ASK mode
1.27
1.42
1.57
V
FSK mode; note 6
1.81
2.01
2.21
V
VCC
V
0.6
V
VOH(DATA)
HIGH-level output voltage at pin 14 IDATA = −10 µA
VOL(DATA)
LOW-level output voltage at pin 14
IDATA = 200 µA
VCC − 0.5 −
0
−
Notes
1. For fi(RF) = 868.35 MHz all values + 0.6 mA.
2. Crystal connected; oscillator and multiplier active.
3. Pin DEMO1 connected to pin DEMO2 via tank circuit.
4. Pin DEMO1 short circuited to ground.
5. The given values are applicable for FSK reception mode. In ASK mode pin 10 is short circuited to ground.
6. No modulation and fIF = 10.7 MHz.
1999 Jan 22
9
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
AC CHARACTERISTICS
VCC = 2.7 V; Tamb = 25 °C; for application diagram see Figs 9 and 10; fi(RF) = 433.92 MHz (see Table 4) and
fi(RF) = 868.35 MHz (see Table 5); fmod = 1 kHz square wave; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
System performance
fi(RF)
RF input frequency
250
−
fIF
IF frequency
10.56
10.7
10.84
MHz
Pi(max)
maximum input power
−
−
3
dBm
ASK mode; BER ≤ 3%;
notes 1 and 2
−22
−16
−10
dBm
FSK mode; BER ≤ 3%;
notes 2 and 3
−6
0
+1
dBm
920
MHz
PSPUR
spurious radiation
note 4
−
−
−57
dBm
fDATA
data frequency
note 5
−
1
−
kHz
ton(RX)
receiver turn-on time
notes 6 and 7
fi(RF) = 433.92 MHz
−
6
10
ms
fi(RF) = 868.35 MHz
−
3
7
ms
1.1
−
1.6
V
fi(RF) = 433.92 MHz
−
−119
−113
dBm
fi(RF) = 868.35 MHz
−
−116
−110
dBm
BER ≤ 3%; notes 2 and 3 −
VRSSI
RSSI voltage
ASK mode
Φi(ASK)
input sensitivity directly into pin MIXIN
BER ≤ 3%; notes 1 and 2
FSK mode
Φi(FSK)
input sensitivity directly into pin MIXIN
∆f
frequency deviation (peak value)
−103
−100
dBm
4
10
75
kHz
∆Φ(FSK)(max) maximum sensitivity degradation
∆f = 4 kHz
−
−
3
dB
Gdem
note 8
0.75
1.0
1.25
mV
---------kHz
fi(RF) = 433.92 MHz
−
600
−
Ω
demodulator gain
Mixer and post mixer amplifier
Zi
input impedance of mixer
IP3PMA
interception point (mixer + PMA)
GPMA
gain (mixer + PMA)
Zo(IF)
output impedance of IF amplifier
fi(RF) = 868.35 MHz
1999 Jan 22
note 9
10
−
300
−
Ω
−38
−30
−
dBm
40
42
50
dB
280
330
380
Ω
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
SYMBOL
PARAMETER
CONDITIONS
UAA3220TS
MIN.
TYP.
MAX.
UNIT
Limiter
limiter input resistance
40
48
56
kΩ
RCPC
data buffer output resistance at pin 17
24
30
36
kΩ
Gbuffer
data buffer AC gain
12
13
14
dB
RCPA,CPB
data buffer output resistance at
pins 15 and 16
120
150
180
kΩ
50
−
100
kHz
Ri(LIN)
Buffer
Data slicer; see Chapter “DC characteristics”
Bds
internal data slicer bandwidth
Notes
1. 100% AM modulation (ASK); available power from generator into a 50 Ω load.
2. With external matching network, to transform the impedance to 50 Ω.
3. ∆f = 10 kHz; available power from generator into a 50 Ω load.
4. Measured at the RF input connector of the test board into a 50 Ω load; fi(RF) = 25 MHz to 1 GHz.
5. The data frequency range can be varied by changing C30 to C32 (see Figs 9 and 10) to match other bit rates.
Data frequency determined by data slicer application.
6. ton = 50 ms; toff = 138 ms; P = Psens + 3 dB.
7. The given turn-on time is only valid during strobing by pin PWD; if the IC is strobed on and off by the supply voltage
the turn-on time will be longer.
8. LC tank circuit (L60, C60) tuned to maximum phase slope.
9. GPMA is typically 6 dB lower when measured in the application, because of the load of the ceramic filter.
1999 Jan 22
11
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
INTERNAL CIRCUITRY
Table 1
Equivalent pin circuits and pin voltages for rough test of printed-circuit board; VCC = 2.7 V; no input signal
PIN
NO.
PIN
SYMBOL
DC VOLTAGE
(V)
1
OGND
0
2
OSE
0.38
3
OSB
1.15
5
OSC
2.7
EQUIVALENT CIRCUIT
5
VCC
3
2
8.15 kΩ
1
GND
MHA780
4
VCC
2.7
6
TEM
0.39
7
TN
2.21
8
TP
2.21
7
8
GND
9.6 kΩ
VCC
5
6
MHA781
9
PWD
−
VCC
210 kΩ
9
10
DEMO1
2.24
11
DEMO2
2.24
12
GND
0
MGM750
7 kΩ
10
10 kΩ
7 kΩ
11
12
1999 Jan 22
12
MGM751
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
PIN
NO.
PIN
SYMBOL
DC VOLTAGE
(V)
13
CGND
0
15
CPA
1.95
16
CPB
1.95
UAA3220TS
EQUIVALENT CIRCUIT
VCC
15
150 kΩ
150 kΩ
16
13
MGM753
14
DATA
−
VCC
1 kΩ
14
13
17
CPC
MGM754
1.95
VCC
30 kΩ
17
GND
MGM755
18
RSSI
1.16
10 kΩ
18
12
1999 Jan 22
13
MGM752
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
PIN
NO.
19
PIN
SYMBOL
LFB
DC VOLTAGE
(V)
UAA3220TS
EQUIVALENT CIRCUIT
1.95
VCC
19
GND
MGM756
20
LIN
1.95
VCC
48 kΩ
20
GND
MGM757
21
VCCI
2.7
22
FA
1.25
21
330 Ω
22
GND
MGM758
23
MIXIN
0.78
24
MGND
0
23
15 Ω
MGM759
1999 Jan 22
14
24
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
TEST INFORMATION
Tuning procedures
TUNING PROCEDURE FOR AC TESTS
1. Turn on the signal generator (fi(RF) = 433.92 or 868.35 MHz; no modulation; RF input level = −50 dBm).
2. Tune first C50 (multiplier tank circuit), second C11 (RF stage input) to obtain a peak IF voltage at pin FA.
TUNING PROCEDURE FOR ASK RECEPTION
1. Make sure that pin DEMO1 is short circuited to ground.
2. Turn on ASK modulation and check that data is appearing on the DATA output pin and proceed with the AC tests.
TUNING PROCEDURE FOR FSK RECEPTION
1. Make sure that pins DEMO1 and DEMO2 are connected by the LC tank circuit.
2. Turn on FSK modulation (∆f = 10 kHz; RF input level = −103 dBm).
3. Tune C61 (or L60) (phase shifter LC tank circuit) to obtain a peak LF voltage at pin CPC.
4. Check that data is appearing on pin DATA and proceed with the AC tests.
AC test conditions
Table 2 Test signals
The reference signal level Pref for the following tests is defined as the minimum input level in dBm to give a
BER ≤ 3 × 10−2 (e.g. 60 bit errors per second for 2000 bits/s). All test signal levels refer to 50 Ω load condition.
TEST
SIGNAL
FREQUENCY
(MHz)
DATA SIGNAL
MODULATION
MODULATION
INDEX
1
2
433.92/868.35
1000 Hz square wave
AM (ASK)
100%
−
433.92/868.35
1000 Hz square wave
FM (FSK)
−
10 kHz
3
433.92/868.35
−
no modulation
−
−
4
433.82/868.35
−
no modulation
−
−
1999 Jan 22
15
FREQUENCY
DEVIATION
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Table 3 Tests and results
P1 is the maximum available power from signal generator 1 at the input of the test board; P2 is the maximum available
power from signal generator 2 at the input of the test board.
GENERATOR
TEST
RESULT
1
2
ASK sensitivity into
pin MIXIN (see Fig.5)
modulated test signal 1;
P1 ≤ −113 dBm for
fi(RF) = 433.92 MHz;
P1 ≤ −110 dBm for
fi(RF) = 868.35 MHz
−
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
FSK sensitivity into
pin MIXIN (see Fig.5)
modulated test signal 2;
P1 ≤ −100 dBm
−
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
Maximum input power modulated test signal 1;
for ASK (see Fig.5)
P1 ≥ −22 dBm
−
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
Maximum input power modulated test signal 2;
for FSK (see Fig.5)
P1 ≥ −6 dBm
−
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
Receiver turn-on
time; see note 1 and
Fig.4
modulated test
signal 1 or 2;
P1 = Pref + 3 dB
−
check that the first 10 bits are correct;
error counting is started 10 ms after power down
is switched into operating mode on
Interception point
(mixer + PMA)
see note 2 and Fig.6
test signal 3;
P1 = −40 dBm
test signal 4;
P2 = P1
measure with high impedance probe at pin FA
IM3
IP3 PMA = P 1 + ---------- dBm (for IM3 see Fig.6)
2
Spurious radiation;
see note 3 and Fig.7
−
−
no spurious signals (25 MHz to 1 GHz) with level
higher than maximum PSPUR
Notes
1. The voltage at pin PWD of the test circuit alternates between operating mode: on (50 ms; 0 V) and off (138 ms; VCC);
see Fig.4.
2. Probe of spectrum analyzer connected to pin FA (pin 22).
3. Spectrum analyzer connected to the input of the test board.
handbook, full pagewidth
VPWD
(V)
2.7
0
0
50
188
238
376
426
t (ms)
MGM745
Fig.4 Timing diagram for pulsed power down voltage.
1999 Jan 22
16
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
GENERATOR 1
50 Ω
BER TEST
FACILITY (2)
TEST CIRCUIT (1)
MED900
(1) For test circuit see Fig.9.
(2) For BER test facility see Fig.8.
Fig.5 Test configuration A (single generator).
GENERATOR 1
50 Ω
50 Ω
2-SIGNAL
POWER
COMBINER
SPECTRUM
ANALYZER
WITH
PROBE
TEST CIRCUIT (1)
GENERATOR 2
50 Ω
IM3
∆f
∆f
∆f
∆f = 100 kHz
MED901
(1) For test circuit see Fig.9.
Fig.6 Test configuration C (IP3).
1999 Jan 22
17
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
SPECTRUM
ANALYZER
INPUT IMPEDANCE
50 Ω
UAA3220TS
TEST CIRCUIT (1)
MED902
(1) For test circuit see Fig.9.
Fig.7 Test configuration D (spurious radiation).
TX data
SIGNAL
GENERATOR
MASTER
CLOCK
DEVICE
UNDER TEST
RX data
BIT PATTERN
GENERATOR
PRESET
DELAY
delayed
TX data
DATA
COMPARATOR
INTEGRATE
AND DUMP
to error counter
BER TEST BOARD
MED904
Fig.8 BER test facility.
1999 Jan 22
18
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RSSI
C22
data output
R20
C20
C12
C21
C33
C30
C32
C31
MGND
MIXIN
FA
VCCI
LIN
LFB
RSSI
CPC
CPB
CPA
DATA
CGND
24
23
22
21
20
19
18
17
16
15
14
13
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
19
+
DATA SLICER
−
OSCILLATOR
MULTIPLIER
×3
×2/×3
BIAS
1
2
3
4
5
6
7
8
9
10
11
12
OGND
OSE
OSB
VCC
OSC
TEM
TN
TP
PWD
DEMO1
DEMO2
GND
C50
R41
C41
C43
C61
L41
R50
X40
L50
L51
R60
R51
R40
C40
C51
VCC
Fig.9 Application diagram (FSK reception).
L60
Product specification
C44
power-down
UAA3220TS
C70
MGM747
C60
C42
L40
Philips Semiconductors
X20
C11
L10
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
VCC
RF
input C10
APPLICATION INFORMATION
ndbook, full pagewidth
1999 Jan 22
50 Ω
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X20
RSSI
C22
data output
R20
C11
L10
C20
C12
C21
C33
C30
C32
C31
MGND
MIXIN
FA
VCCI
LIN
LFB
RSSI
CPC
CPB
CPA
DATA
CGND
24
23
22
21
20
19
18
17
16
15
14
13
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
20
+
DATA SLICER
−
OSCILLATOR
MULTIPLIER
×3
×2/×3
Philips Semiconductors
VCC
RF
input C10
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
ndbook, full pagewidth
1999 Jan 22
50 Ω
BIAS
1
2
3
4
5
6
7
8
9
10
11
12
OGND
OSE
OSB
VCC
OSC
TEM
TN
TP
PWD
DEMO1
DEMO2
GND
MGM748
C50
C42
R41
L40
C41
C43
L41
R50
X40
L50
L51
R51
R40
C40
power-down
C51
VCC
Fig.10 Application diagram (ASK reception).
Product specification
C44
UAA3220TS
C70
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
Table 4
UAA3220TS
Component list for Figs 9 and 10; fi(RF) = 433.92 MHz
COMPONENT CHARACTERISTICS
TOLERANCE
TEMPERATURE
LOSS FACTOR
COEFFICIENT
AT 1 MHz
(ppm/K)
330 Ω
±2%
+50
−
−
±2%
+50
−
−
−
−
−
−
−
+50
−
−
−
COMPONENT
VALUE
R20
R40
1.8 kΩ
R41
not placed −
R50
1.2 kΩ
±2%
QUALITY
FACTOR
SELF
RESONANCE
FREQUENCY
−
R51
1.5 kΩ
±2%
+50
−
−
−
R60
4.7 kΩ
±2%
+50
−
−
−
C10(1)
2.7 pF
±10%
0 ±30
tan δ ≤ 20 × 10−4 −
−
C11
3 to 10 pF −
0 ±300
tan δ ≤ 20 ×
10−4
−
−
10−4
C12
100 pF
±10%
0 ±30
tan δ ≤ 10 ×
−
−
C20
1 nF
±10%
0 ±30
tan δ ≤ 10 × 10−4 −
−
C21
47 nF
±10%
0 ±30
tan δ ≤ 10 ×
10−4
−
−
10−4
C22
1 nF
±10%
0 ±30
tan δ ≤ 10 ×
−
−
C30
2.7 nF
±10%
0 ±30
tan δ ≤ 10 × 10−4 −
−
C31
470 pF
±10%
0 ±30
tan δ ≤ 10 ×
10−4
−
−
10−4
C32
47 nF
±10%
0 ±30
tan δ ≤ 10 ×
−
−
C33
10 nF
±10%
0 ±30
tan δ ≤ 10 × 10−4 −
−
C40
1 nF
±10%
0 ±30
tan δ ≤ 20 ×
10−4
−
−
10−4
C41(1)
15 pF
±10%
0 ±30
tan δ ≤ 20 ×
−
−
C42
15 pF
±10%
0 ±30
tan δ ≤ 10 × 10−4 −
−
C43(1)
8.2 pF
±10%
±10%
C44
1 nF
C50
3 to 10 pF −
C51
C60(2)
1 nF
82 pF
±10%
±10%
tan δ ≤ 20 ×
10−4
−
−
0 ±30
tan δ ≤ 10 ×
10−4
−
−
0 ±300
tan δ ≤ 20 × 10−4 −
−
0 ±30
0 ±30
0 ±30
tan δ ≤ 10 ×
10−4
−
−
tan δ ≤ 10 ×
10−4
−
−
10−4
C61(2)
5 to 30 pF −
0 ±300
tan δ ≤ 10 ×
−
−
C70
not placed −
−
−
−
−
L10(3)
8 nH
±5%
+25 to +125
−
≥140 at 150 MHz
≥3 GHz
L40
560 nH
±10%
+25 to +125
−
≥45 at 100 MHz
≥400 MHz
L41
100 nH
±10%
+25 to +125
−
≥60 at 350 MHz
≥1 GHz
L50(3)
8 nH
±5%
+25 to +125
−
≥140 at 150 MHz
≥3 GHz
L51(3)
8 nH
±5%
+25 to +125
−
≥140 at 150 MHz
≥3 GHz
L60(2)
2.2 µH
±10%
+25 to +125
−
≥37 at 7.9 MHz
≥150 MHz
X20
ceramic filter, Murata SFE 10.7 MA 5 A; see note 4
X40
3rd overtone crystal, 70.5367 MHz; see note 5
1999 Jan 22
21
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Notes
1. C10, C41 and C43 can be placed as tuning capacitors on the PCB.
2. C60, C61 and L60 can be substituted by an LC tank.
3. L10, L50 and L51 are 3 turn air coils.
4. 3 dB bandwidth: 280 ± 50 kHz; insertion loss: 4 dB typical and 6 dB maximum; spurious: 30 dB minimum at
8 to 12 MHz; input and output impedance: 330 Ω.
5. Motional resistance: Rm ≤ 20 Ω; static capacitance: C0 ≤ 6 pF; load capacitance: CL = 6 pF; loaded parallel
resonance frequency: 70.5367 MHz; drive level dependency: Rm ≤ 20 Ω (1 nW ≤ P ≤ 1 mW).
1999 Jan 22
22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
Table 5
UAA3220TS
Component list for Figs 9 and 10; fi(RF) = 868.35 MHz
COMPONENT CHARACTERISTICS
TOLERANCE
TEMPERATURE
COEFFICIENT
(ppm/K)
LOSS FACTOR
AT 1 MHz
COMPONENT
VALUE
QUALITY
FACTOR
SELF
RESONANCE
FREQUENCY
R20
330 Ω
±5%
≤±100
−
−
−
R40
1.5 kΩ
±5%
≤±100
−
−
−
R41
not placed
−
−
−
−
−
R50
390 Ω
±5%
≤±100
−
−
−
R51
330 Ω
±5%
≤±100
−
−
−
R60
4.7 kΩ
±5%
≤±100
−
−
−
C10
27 pF
±5%
0 ±30
tan δ ≤ 10 × 10−4
−
−
tan δ ≤ 20 ×
10−4
−
−
10−4
C11
1.7 to 3 pF −
0 ±300
C12
27 pF
±5%
0 ±30
tan δ ≤ 10 ×
−
−
C20
1 nF
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
C21
47 nF
C22
1 nF
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
C30
3.3 nF
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
C31
680 pF
C32
10 nF
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
C33
10 nF
±10%
±15%(1)
tan δ ≤ 2.5%
−
−
±10%
±15%(1)
tan δ ≤ 2.5%
C40
1 nF
−
−
10−4
C41
12 pF
±5%
0 ±30
tan δ ≤ 10 ×
−
−
C42
12 pF
±5%
0 ±30
tan δ ≤ 10 × 10−4
−
−
0 ±30
tan δ ≤ 15 ×
10−4
−
−
0 ±30
tan δ ≤ 10 ×
10−4
−
−
0 ±300
tan δ ≤ 20 × 10−4
−
−
tan δ ≤ 10 ×
10−4
−
−
tan δ ≤ 10 ×
10−4
−
−
10−4
C43
4 pF
±0.25 pF
±5%
C44
47 pF
C50
2.5 to 6 pF −
C51
C60(2)
47 pF
82 pF
±5%
±5%
0 ±30
0 ±30
C61(2)
5 to 30 pF
−
0 ±300
tan δ ≤ 3.4 ×
−
−
C70
4.7 µF
±20%
±15%(1)
tan δ ≤ 0.06
−
−
L10(3)
−
−
−
−
−
−
L40
560 nH
±10%
+25 to +125
−
≥30 at 25 MHz
≥415 MHz
L41
39 nH
±10%
+25 to +125
−
≥50 at 50 MHz
≥1.5 GHz
L50(3)
−
−
−
−
−
−
L51(3)
−
−
−
−
−
−
L60(2)
2.2 µH
±10%
+25 to +125
−
≥20 at 7.9 MHz
≥140 MHz
X20
ceramic filter, Murata SFE 107 MA 5 A; see note 4
X40
3rd overtone crystal, 95.2944 MHz; see note 5
1999 Jan 22
23
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Notes
1. Temperature coefficient given as maximum ∆C/C over temperature range.
2. C60, C61 and L60 can be substituted by an LC tank.
3. Realized as microstrip line; see Fig.12.
4. 3 dB bandwidth: 280 ± 50 kHz; insertion loss: 4 dB typical and 6 dB maximum; spurious: 30 dB minimum at
8 to 12 MHz; input and output impedance: 330 Ω.
5. Motional resistance: Rm ≤ 20 Ω; static capacitance: C0 ≤ 6 pF; load capacitance: CL = 6 pF; loaded parallel
resonance frequency: 95.2944 MHz; drive level dependency: Rm ≤ 20 Ω (1 nW ≤ P ≤ 1 mW).
1999 Jan 22
24
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
47
handbook, full pagewidth
44
top view
bottom view
VCC
RSSI
DATA out
L60
C51
L51
L50
C33
C30
C32
C31
C61
C60
C22
R60
C20
R20
C21
L10
R51
L41
R50
X10
C12
C50
C43
R41
C44
C42
UAA3220TS
L40
C70
C41
C10
C40
C11
R40
X40
MGM749
RF in
Dimensions in mm.
Fig.11 Printed-circuit board layout for fi(RF) = 433.92 MHz.
1999 Jan 22
25
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
47
handbook, full pagewidth
46
bottom view
jumper
DATA out
RSSI
L60
C50
L41
C11
C42 C44
C40
R40 C41
C10
C43
R41
R20
C22
C21
C51
R51
C12
RF in
CON9
C70
UAA3220TS
C20
X20
n.p.
R50
C33
C30
C32
C31
C61
C60
R60
L40
X40
MHB459
Dimensions in mm.
Fig.12 Printed-circuit board layout for fi(RF) = 868.35 MHz.
1999 Jan 22
26
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PACKAGE OUTLINE
SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
D
SOT340-1
E
A
X
c
HE
y
v M A
Z
24
13
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
12
bp
e
detail X
w M
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
2.0
0.21
0.05
1.80
1.65
0.25
0.38
0.25
0.20
0.09
8.4
8.0
5.4
5.2
0.65
7.9
7.6
1.25
1.03
0.63
0.9
0.7
0.2
0.13
0.1
0.8
0.4
8
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT340-1
1999 Jan 22
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
93-09-08
95-02-04
MO-150AG
27
o
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
If wave soldering is used the following conditions must be
observed for optimal results:
SOLDERING
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
1999 Jan 22
UAA3220TS
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
28
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 22
29
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
NOTES
1999 Jan 22
30
UAA3220TS
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
NOTES
1999 Jan 22
31
UAA3220TS
Philips Semiconductors – a worldwide company
Argentina: see South America
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
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Hungary: see Austria
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254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
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Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/00/02/pp32
Date of release: 1999 Jan 22
Document order number:
9397 750 04896