DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V handbook, halfpage k a • Repetitive peak forward current: max. 450 mA. MAM246 The diode is type branded. APPLICATIONS • High-speed switching Fig.1 Simplified outline (SOD27; DO-35) and symbol. • Fast logic applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current − 250 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 μs − 4 A t = 1 ms − 1 A t=1s − 0.5 A see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 − Ptot total power dissipation Tstg storage temperature −65 Tj junction temperature − Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Sep 17 2 350 mW +200 °C 200 °C NXP Semiconductors Product data sheet High-speed diode BAW62 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS reverse current MAX. UNIT 620 750 mV see Fig.3 IF = 5 mA IR MIN. IF = 100 mA − 1 000 mV IF = 100 mA; Tj = 100 °C − 930 mV VR = 20 V − 25 nA VR = 50 V − 200 nA VR = 75 V − 5 μA VR = 20 V; Tj = 150 °C − 50 μA see Fig.5 VR = 75 V; Tj = 150 °C − 100 μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 − 2.5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 17 3 NXP Semiconductors Product data sheet High-speed diode BAW62 GRAPHICAL DATA MBG448 300 MBG464 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) (3) 200 100 0 0 0 Tamb (oC) 100 0 200 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (μs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 4 104 NXP Semiconductors Product data sheet High-speed diode BAW62 MGD006 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (μA) Cd (pF) 102 1.0 (1) (2) (3) 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 17 5 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed diode BAW62 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I V 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 17 6 t tp output signal NXP Semiconductors Product data sheet High-speed diode BAW62 PACKAGE OUTLINE 0.56 max 1.85 max 4.25 max 25.4 min Dimensions in mm. Fig.9 SOD27 (DO-35). 1996 Sep 17 7 25.4 min mla428 - 1 NXP Semiconductors Product data sheet High-speed diode BAW62 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 17 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 17