DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package • Low leakage current: typ. 3 pA TYPE NUMBER MARKING CODE(1) PIN 1 anode BAV199 JY∗ 2 cathode 3 anode; cathode • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V PINNING Note DESCRIPTION 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. • Repetitive peak forward current: max. 500 mA. APPLICATION 2 handbook, 4 columns 1 • Low-leakage current applications in surface mounted circuits. 2 1 DESCRIPTION 3 Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. 3 MAM107 Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA double diode loaded; note 1; see Fig.2 − 140 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 250 mW Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on a FR4 printed-circuit board. 2001 Oct 12 2 NXP Semiconductors Product data sheet Low-leakage double diode BAV199 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA − 900 mV IF = 10 mA − 1 000 mV IF = 50 mA − 1100 mV IF = 150 mA − 1 250 mV VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on a FR4 printed-circuit board. 2001 Oct 12 3 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet Low-leakage double diode BAV199 GRAPHICAL DATA MLB756 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 (1) (2) (3) single diode loaded 100 100 double diode loaded 0 0 100 T amb ( oC) 0 200 0 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on a FR4 printed-circuit board. Fig.2 0.4 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; per diode. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. 2001 Oct 12 4 NXP Semiconductors Product data sheet Low-leakage double diode MLB754 2 10halfpage handbook, IR (nA) 10 BAV199 MBG526 2 handbook, halfpage (1) Cd (pF) 1 1 10 1 (2) 10 2 10 3 0 0 50 100 150 T j ( oC) 0 200 VR = 75 V. (1) Maximum values. (2) Typical values. Fig.5 5 10 15 VR (V) 20 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature; per diode. Fig.6 handbook, full pagewidth tr Diode capacitance as a function of reverse voltage; per diode; typical values. tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal Fig.7 Reverse recovery time test circuit and waveforms. 2001 Oct 12 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage double diode BAV199 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2001 Oct 12 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 6 NXP Semiconductors Product data sheet Low-leakage double diode BAV199 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Oct 12 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 12 Document order number: 9397 750 08764