DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature profile PIN • Gold metallization ensures excellent reliability • Internal input and output matching for an easy design of wideband circuits. APPLICATIONS SYMBOL DESCRIPTION 1 c collector 2 b base 3 e emitter, connected to flange handbook, halfpage 1 • Common emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range. 3 DESCRIPTION 2 NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. Top view MSA470 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION PL (W) Gp (dB) ηC (%) 26 35 typ. 9.5 typ. 43 − 26 35 (PEP) ≥9.5 ≥33 ≤−30 f (MHz) VCE (V) CW, class-AB 1990 2-tone, class-AB f1 = 1990.0; f2 = 1990.1 dim (dBc) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 4 A IC(AV) average collector current − 4 A Ptot total power dissipation − 125 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 21 2 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink CONDITIONS PL = 35 W; ηC = 40%; Tmb = 25 °C VALUE UNIT 1.4 K/W 0.4 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage 65 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 60 mA 27 − − V V(BR)EBO emitter-base breakdown voltage 3 − − V mA open emitter; IC = 20 mA open collector; IE = 40 mA ICES collector leakage current VCE = 26 V; VBE = 0 − − 4 hFE DC current gain VCE = 10 V; IC = 2 A 45 − 100 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 − t.b.f. − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − t.b.f. − pF Note 1. Capacitance of die only. APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 1990 26 150 35 typ. 9.5 typ. 43 − 2-tone, class-AB f1 = 1990.0; f2 = 1990.1 26 150 35 (PEP) ≥9.5 typ. 10.2 ≥33 typ. 35 ≤−30 typ. −32 Ruggedness in class-AB operation The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 150 mA; PL = 35 W (PEP); Tmb = 25 °C. 2000 Feb 21 3 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N MCD881 12 handbook, halfpage Gp 60 ηC (%) 50 Gp (dB) ηC Gp 60 ηC (%) 50 Gp (dB) 40 8 MCD882 12 handbook, halfpage 40 8 30 30 ηC 20 4 20 4 10 10 0 0 0 10 20 30 PL (W) 0 0 40 0 10 20 30 40 PL (PEP) (W) VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz VCE = 26 V; ICQ = 150 mA; f = 1990 MHz. Fig.3 Fig.2 Power gain and collector efficiency as functions of load power; typical values. MCD883 0 handbook, halfpage dim (dBc) −20 d3 d5 −40 −60 0 10 20 30 40 PL (PEP) (W) VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz. Fig.4 Intermodulation distortion as a function of peak envelope load power; typical values. 2000 Feb 21 4 Power gain and collector efficiency as functions of peak envelope load power; typical values. Philips Semiconductors Preliminary specification UHF power transistor BLV2045N R1 handbook, full pagewidth C8 L13 L7 Vbb VCC C9 C10 C11 C14 C13 C15 C16 L12 C12 L9 L6 L4 L2 L1 50 Ω input C2 L8 L5 L11 L3 L10 C7 C1 C3 C6 C4 C5 MCD884 Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.5 Class-AB test circuit for 1990 MHz. 2000 Feb 21 5 50 Ω output Philips Semiconductors Preliminary specification UHF power transistor BLV2045N List of components (see Figs 5 and 6) COMPONENT DESCRIPTION VALUE C1 C2, C7 C3 Tekelec variable capacitor; type AT37281 multilayer ceramic chip capacitor; note1 multilayer ceramic chip capacitor; note 2 0.4 to 2.5 pF 30 pF 2.4 pF C4 C5 C6 multilayer ceramic chip capacitor; note 2 Tekelec variable capacitor; type AT37271 multilayer ceramic chip capacitor; note 2 1.8 pF 0.6 to 4.5 pF 1.3 pF C8, C14 C9, C10, C11, C15, C16 tantalum SMD capacitor multilayer ceramic chip capacitor 35 V; 10 µF 100 nF C12, C13 L1 L2 L3 L4 L5 L6 multilayer ceramic chip capacitor; note 2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 5 turns enamelled 1 mm copper wire 20 pF 50 Ω 20.5 Ω 29.8 Ω 11 Ω 13.2 Ω L7 L8 L9 L10 L11 L12 EMI filter; type NFM61RH20T332 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 2 turns enamelled 1 mm copper wire 3300 pF 11.5 Ω 6.9 Ω 35.8 Ω 14.4 Ω L13 R1 EMI filter; type NFM60RH20T152 chip resistor 1500 pF 2.2 Ω DIMENSIONS 8 x 1 mm 2.5 x 3.5 mm 5.6 x 2.1 mm 2.0 x 7.4 mm 7.2 x 6.0 mm int. dia. = 3.3 mm; length = 6 mm 6.6 x 7.1 mm 6.4 x 12.6 mm 9.9 x 1.6 mm 2.7 x 5.4 mm int. dia. = 3.3 mm; length = 2.5 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board: εr = 6.15; thickness 0.64mm. 2000 Feb 21 6 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N 30 handbook, full pagewidth 30 40 PH98058-inp PH98058-out VC Vb C10 C16 C11 C9 C15 L6 R1 L12 C13 C12 C8 C14 L5 C4 L11 C3 C7 C1 C6 C2 C5 PH98058-inp PH98058-out MCD885 Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Printed-circuit board and component layout for class-AB broadband test circuit. 2000 Feb 21 7 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N MCD886 4 MCD887 6 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 3 4 ZL 2 2 xi 1 0 0 1800 1850 1900 −2 1800 2000 1950 XL 1850 1900 2000 1950 f (MHz) f (MHz) VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C. VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C. Fig.7 Fig.8 Input impedance as a function of frequency (series components); typical values. MCD888 12 handbook, halfpage 60 ηC (%) 50 Gp Gp Load impedance as a function of frequency (series components); typical values. (dB) ηC 40 8 30 dbook, halfpage 20 4 10 Zi ZL 0 1800 1850 1900 MBA451 0 2000 1950 f (MHz) VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C. Fig.9 Power gain and collector efficiency as functions of frequency; typical values. 2000 Feb 21 Fig.10 Definition of transistor impedance. 8 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads SOT390A D A F 3 D1 U1 B q C c 1 L U2 E E1 A L w1 M A M B M p 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F L p Q q U1 U2 w1 w2 mm 5.03 4.22 5.72 5.46 0.16 0.10 8.18 8.08 8.26 8.00 6.40 6.30 6.43 6.17 1.66 1.39 6.10 5.33 3.43 3.17 2.32 2.00 14.22 19.03 18.77 6.43 6.17 0.25 0.51 0.198 0.225 0.006 0.166 0.215 0.004 0.322 0.318 0.325 0.252 0.253 0.065 0.315 0.248 0.243 0.055 0.24 0.21 0.135 0.091 0.560 0.125 0.079 0.749 0.739 0.253 0.010 0.020 0.243 inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT390A 2000 Feb 21 EUROPEAN PROJECTION ISSUE DATE 99-03-29 9 Philips Semiconductors Preliminary specification UHF power transistor BLV2045N DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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