DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 PINNING - SOT422A FEATURES • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. 3 3 2 MBK051 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) VCB (V) PL (W) Gp (dB) ηC (%) 2.7 to 3.1 40 60 typ. 9 typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 30 2 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCES collector-emitter voltage RBE = 0 − 75 V VEBO emitter-base voltage open collector − 2 V ICM peak collector current tp ≤ 100 µs; δ ≤ 10% − 6 A Ptot total power dissipation tp = 100 µs; δ = 10%; Tmb = 25 °C − 80 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C up to 0.2 mm from ceramic cap; t ≤ 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS VALUE UNIT 0.3 K/W MAX. UNIT tp = 100 µs; δ = 10%; note 1 thermal impedance from junction to heatsink Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. V(BR)CBO collector-base breakdown voltage 75 − − V V(BR)CES collector-emitter breakdown voltage IC = 15 mA; VBE = 0 75 − − V ICBO collector leakage current VCB = 40 V; IE = 0 − − 1.5 mA ICES collector leakage current VCE = 40 V; VBE = 0 − − 3 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 − − 0.3 mA hFE DC current gain VCB = 5 V; IC = 1.5 A 40 − − Cc collector capacitance (die only) VCE = 1 V; IE = ie = 0; f = 1 MHz − 30 − IC = 15 mA; open emitter pF APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (W) Gp (dB) ηC (%) Class-C; tp = 100 µs; δ = 10% 2.7 to 3.1 40 ≥50 typ. 60 ≥8 typ. 9 ≥35 typ. 40 1998 Jan 30 3 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 MGM533 handbook, halfpage (3) (2) (1) PL (W) Gp (dB) 40 8 20 4 0 2.6 0 0 MGM534 12 60 handbook, halfpage 2 4 6 8 10 2.8 3 PD (W) VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 2.7 GHz. (3) f = 2.9 GHz. Fig.2 f (GHz) 3.2 VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%. Load power as a function of drive power; typical values. Fig.3 MGM535 16 Power gain as function of frequency; typical values. MGM536 12 ZL handbook, halfpage handbook, halfpage Zi (Ω) (Ω) 8 12 xi RL 4 ri 8 0 4 −4 0 2.6 2.8 3 f (GHz) −8 2.6 3.2 VCB = 40 V; class-C; PL = 50 W. Fig.4 2.8 3 f (GHz) 3.2 VCB = 40 V; class-C; PL = 50 W. Input impedance as function of frequency (series components); typical values. 1998 Jan 30 XL Fig.5 4 Load impedance as function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor handbook, full pagewidth BLS2731-50 30 30 40 C1 C2 C3 input output C4 MGM537 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = ATC 200A 10 nF C2 = ATC 100A 10 pF C3 = ATC 700A 150 pF C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 1998 Jan 30 5 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A D A F 3 D1 U1 B q c C 1 H p U2 E1 E w1 M A B A 2 w2 M C b 0 Q 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 5.72 4.83 5.21 4.95 0.13 0.08 9.93 9.68 10.29 10.03 8.76 8.51 10.29 10.03 1.58 1.47 21.61 21.08 3.43 3.18 3.35 2.92 16.51 22.99 22.73 9.91 9.65 0.25 0.76 inches 0.225 0.190 0.205 0.195 0.005 0.003 0.391 0.381 0.405 0.395 0.345 0.335 0.405 0.395 0.062 0.058 0.89 0.83 0.135 0.125 0.132 0.115 0.65 0.905 0.895 0.390 0.380 0.01 0.03 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT422A 1998 Jan 30 EUROPEAN PROJECTION ISSUE DATE 97-12-24 6 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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