Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PINNING - SOT199 PIN PBYR3045PTF series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER MAX. MAX. MAX. UNIT PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) 35PTF 40PTF 35 40 45PTF 45 V 0.65 20 V A 0.65 20 PIN CONFIGURATION 0.65 20 SYMBOL DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) case a2 3 a1 1 k2 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 113 ˚C IO(AV) Output current (both diodes conducting) RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj August 1996 CONDITIONS square wave; δ = 0.5; Ths ≤ 109 ˚C t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature 1 MIN. - MAX. -35 35 35 35 -40 40 40 40 UNIT -45 45 45 45 V V V - 20 A - 20 30 A A - 135 150 A A - 91 2 A2s A - 2 A -65 - 175 150 ˚C ˚C Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR3045PTF series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 4.0 3.5 K/W K/W - 35 - K/W MIN. TYP. MAX. UNIT - 0.70 0.58 0.75 100 12 800 0.75 0.65 0.80 200 40 - V V V µA mA pF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient per diode both diodes (with heatsink compound) in free air. STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) Cd Junction capacitance (per diode) IF = 30 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 30 A VR = VRWM VR = VRWM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C August 1996 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier 15 PF / W PBYR3045PTF series Ths(max) / C PBYR1645F Vo = 0.3020 V Rs = 0.0139 Ohms IR / mA 90 0.5 150 C 10 0.2 0.1 10 PBYR1645 100 D = 1.0 110 125 C 1 100 C 5 tp I D= 130 tp T 0.1 75 C Tj = 50 C t T 0 0 5 10 15 IF(AV) / A 0.01 150 25 20 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 14 PF / W Ths(max) / C PBYR1645F Vo = 0.302 V Rs = 0.0139 Ohms a = 1.57 12 2.2 10 4 25 50 VR/ V Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj PBYR1645 Cd / pF 84 10000 92 1.9 110 2.8 8 118 6 126 4 134 2 142 1000 0 0 5 100 1 150 15 10 10 IF(AV) / A Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 50 IF / A PBYR1645 typ Tj = 25 C Tj = 125 C 100 VR / V Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. Zth j-hs (K/W) 10 max 40 1 30 20 0.1 PD tp 10 t 0 0.01 0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4 10us Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj August 1996 1ms tp / s 0.1s 10s Fig.6. Transient thermal impedance per diode; Zth j-hs = f(tp). 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR3045PTF series MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.7. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1996 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR3045PTF series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 5 Rev 1.100