PHILIPS PHP18N20E

Philips Semiconductors
Product specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PINNING - TO220AB
PIN
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
200
18
150
0.18
V
A
W
Ω
PIN CONFIGURATION
DESCRIPTION
1
gate
2
drain
3
source
tab
PHP18N20E
SYMBOL
d
tab
g
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID
Continuous drain current
IDM
PD
∆PD/∆Tmb
VGS
EAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb > 25 ˚C
IAS
Tj, Tstg
Operating junction and
storage temperature range
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
MIN.
MAX.
UNIT
-
18
12.5
72
150
1.0
± 30
150
A
A
A
W
W/K
V
mJ
-
18
A
- 55
175
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
March 1997
CONDITIONS
1
MIN.
TYP.
MAX.
UNIT
-
-
1
K/W
-
60
-
K/W
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP18N20E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
VGS = 0 V; ID = 0.25 mA
200
-
-
V
∆V(BR)DSS /
∆Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
VDS = VGS; ID = 0.25 mA
-
0.25
-
V/K
IGSS
Gate-source leakage current
2.0
6.7
-
0.13
3.0
13
1
4
10
0.18
4.0
25
250
100
Ω
V
S
µA
µA
nA
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 18 A; VDD = 160 V; VGS = 10 V
-
53
8
25
60
10
30
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; ID = 18 A;
RG = 9.1 Ω; RD = 5.4 Ω
-
15
63
66
50
-
ns
ns
ns
ns
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1370
240
70
-
pF
pF
pF
MIN.
TYP.
MAX.
UNIT
VGS = 10 V; ID = 11 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 11 A
VDS = 200 V; VGS = 0 V
VDS = 160 V; VGS = 0 V; Tj = 150 ˚C
VGS = ±30 V; VDS = 0 V
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IS
Tmb = 25˚C
-
-
18
A
Tmb = 25˚C
-
-
72
A
VSD
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
IS = 18 A; VGS = 0 V
-
-
1.5
V
trr
Reverse recovery time
IS = 18 A; VGS = 0 V;
dI/dt = 100 A/µs
-
200
-
ns
Qrr
Reverse recovery charge
-
1.5
-
µC
ISM
March 1997
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Normalised Power Derating
PD%
120
PHP18N20E
10
Zth j-mb / (K/W)
BUKx56-lv
110
100
90
1
D=
80
0.5
70
0.2
0.1
0.05
60
0.1
50
0.02
40
30
0.01
tp
PD
D=
0
20
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
1E-05
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
120
t
T
0.001
180
tp
T
ID, Drain current (Amps)
40
10 V
110
PHP18N20
7V
6V
Tj = 25 C
100
90
30
5.5 V
80
70
60
20
50
5V
40
30
10
VGS = 4.5 V
20
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
0
180
0
5
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100
ID, Drain current (Amps)
D
V
)=
25
30
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
PHP18N20E
ID
S/
10
15
20
VDS, Drain-Source voltage (Volts)
RDS(on), Drain-Source on resistance (Ohms)
0.4
4.5 V
tp = 10 us
5V
5.5 V
PHP18N20
6V
N
(O
S
RD
10
0.3
100 us
7V
1 ms
DC
0.2
10 ms
VGS = 10 V
100 ms
1
0.1
Tj = 25 C
0.1
1
10
100
VDS, Drain-source voltage (Volts)
0
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
March 1997
0
10
20
ID, Drain current (Amps)
30
40
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP18N20E
VGS(TO) / V
PHP18N20E
ID, Drain current (Amps)
VDS = 30 V
Tj = 25 C
40
max.
4
Tj = 175 C
30
typ.
3
min.
20
2
10
1
0
0
0
2
4
6
VGS, Gate-source voltage (Volts)
8
-60
10
PHP18N20E
gfs, Transconductance (S)
20
60
Tj / C
100
140
180
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
20
-20
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
VDD = 30 V
1E-02
15
Tj = 25 C
2%
1E-03
10
Tj = 175 C
98 %
1E-04
5
0
typ
1E-05
1E-06
0
10
20
ID, Drain current (Amps)
30
0
40
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
VGS / V
3
4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
1
10000
Ciss, Coss, Crss, Junction capacitances (pF)PHP18N20E
Ciss
1000
Coss
Crss
100
-60
-20
20
60
Tj / C
100
140
10
180
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 18 A; VGS = 10 V
March 1997
1
10
100
VDS, Drain-source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
15
PHP18N20E
PHP18N20E
VGS, Gate-Source voltage (Volts)
40
IF, Source-drain diode current (Amps)
PHP18N20E
VGS = 0 V
ID = 18 A
Tj = 25 C
160 V
VDS = 40 V
100 V
30
10
Tj = 175 C
Tj = 25 C
20
5
10
0
0
10
20
30
40
50
Qg, Gate charge (nC)
60
70
0
80
Switching times (ns)
PHP18N20E
120
110
100
90
80
70
VDD = 100 V
VGS = 10 V
RD = 5.4 Ohms
ID = 18 A
Tj = 25 C
100
0
10
20
30
40
RG, Gate resistance (Ohms)
50
60
EAS, Normalised unclamped inductive energy (%)
20
Fig.14. Typical switching times.
td(on), tr, td(off), tf = f(RG)
1.15
1.5
60
50
40
30
20
10
0
td(off)
tr
tf
td(on)
10
0.5
1
VSDS, Source-drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
1000
0
40
60
80
100
120
Starting Tj ( C)
140
160
180
Fig.17. Normalised unclamped inductive energy.
EAS% = f(Tj)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
+
V(BR)DSS @ 25 C
1.1
VDD
L
1.05
VDS
-
VGS
1
-ID/100
0
0.95
0.9
0.85
-100
RGS
-50
0
50
Tj, Junction temperature (C)
100
R 01
shunt
150
Fig.18. Unclamped inductive test circuit.
EAS = 0.5 ⋅ LID2 ⋅ V(BR)DSS /(V(BR)DSS − VDD )
Fig.15. Normalised drain-source breakdown voltage.
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
March 1997
T.U.T.
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP18N20E
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.19. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
March 1997
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP18N20E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1997
7
Rev 1.000