PHILIPS PMEM1505PG

PMEM1505PG
PNP transistor/Schottky rectifier module
Rev. 01 — 26 May 2004
Product data sheet
1. Product profile
1.1 General description
Combination of an PNP transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG.
1.2 Features
■
■
■
■
■
■
300 mW total power dissipation
Current capability up to 0.5 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
◆ Low collector-emitter saturation voltage.
■ Diode
◆ Ultra high-speed switching
◆ Very low forward voltage
◆ Guard ring protected.
1.3 Applications
■
■
■
■
■
DC-to-DC converters
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits
MOSFET drivers.
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
−15
V
-
-
−0.5
A
PNP transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
continuous
[1]
Schottky barrier rectifier
VR
continuous reverse voltage
-
-
20
V
IF
continuous forward current
-
-
0.5
A
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
2. Pinning information
Table 2:
Discrete pinning
Pin
Description
Simplified outline
1
anode
5
cathode
1
4
collector
2
2
base
3
emitter
Symbol
3
2
1
5
3
4
4
Top view
5
sym024
3. Ordering information
Table 3:
Ordering information
Type number
PMEM1505PG
Package
Name
Description
Version
-
plastic surface mounted package; 5 leads
SOT353
4. Marking
Table 4:
Marking
Type number
Marking code [1]
PMEM1505PG
L6*
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP transistor
VCBO
collector-base voltage
open emitter
-
−15
V
VCEO
collector-emitter voltage
open base
-
−15
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
-
−6
V
continuous
[1]
-
−0.5
A
continuous
[2]
-
−0.6
A
continuous;
Ts ≤ 55 °C
[3]
-
−1
A
ICM
peak collector current
-
−1
A
IBM
peak base current
-
−100
mA
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
2 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
Min
Max
Unit
Tamb ≤ 25 °C
[1]
total power dissipation
-
200
mW
Tamb ≤ 25 °C
[2]
-
250
mW
Ts ≤ 55 °C
[3]
-
800
mW
-
150
°C
-
20
V
junction temperature
Tj
Schottky barrier rectifier
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward
current
t = 8.3 ms
square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.5
A
-
5
A
[1]
-
200
mW
Tamb ≤ 25 °C
[2]
-
250
mW
Ts ≤ 55 °C
[3]
-
800
mW
[2]
-
125
°C
junction temperature
Tj
Combined device
Ptot
total power dissipation
Tstg
storage temperature
Tamb
operating ambient
temperature
Tamb ≤ 25 °C
[2]
[2]
-
300
mW
−65
+150
°C
−65
+150
°C
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[2]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both
collector and cathode.
[3]
Solder point of collector or cathode tab.
6. Thermal characteristics
Table 6:
Symbol
Thermal characteristics [1]
Parameter
Conditions
Typ
Unit
Single device
Rth(j-s)
Rth(j-a)
from junction to solder point
from junction to ambient
in free air
[2]
120
K/W
in free air
[3]
395
K/W
[4]
495
K/W
[5]
410
K/W
Combined device
Rth(j-a)
from junction to ambient
[1]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Solder point of collector or cathode tab.
[3]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both
collector and cathode.
[4]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[5]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
9397 750 12751
Product data sheet
in free air
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
3 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PNP transistor
collector-base cut-off
current
VCB = −15 V; IE = 0 A
-
-
−100
nA
VCB = −15 V; IE = 0 A;
Tj = 150 °C
-
-
−50
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −2 V; IC = −10 mA
200
-
-
VCE = −2 V; IC = −100 mA
150
-
-
90
-
-
ICBO
VCE = −2 V; IC = −500 mA
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA
[1]
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
-
-
−25
mV
-
-
−150
mV
-
-
−250
mV
-
300
< 500
mΩ
RCEsat
equivalent
on-resistance
IC = −500 mA; IB = −50 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
[1]
-
-
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −100 mA
[1]
-
-
−0.9
V
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
[1]
100
280
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A;
f = 1 MHz
-
4.4
10
pF
Schottky barrier rectifier
continuous forward
voltage
VF
reverse current
IR
diode capacitance
Cd
[1]
see Figure 1
IF = 10 mA
[1]
-
240
270
mV
IF = 100 mA
[1]
-
300
350
mV
IF = 500 mA
[1]
-
400
460
mV
IF = 1000 mA
[1]
-
480
550
mV
VR = 5 V
[1]
-
5
10
µA
VR = 8 V
[1]
-
7
20
µA
VR = 15 V
[1]
-
10
50
µA
-
19
25
pF
see Figure 2
VR = 5 V; f = 1 MHz; see
Figure 3
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
4 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
001aaa479
103
001aaa480
105
IR
(µA)
IF
(mA)
104
(1)
(2)
(1)
(3)
102
103
(2)
102
10
(3)
10
1
1
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
VF (V)
25
VR (V)
Schottky barrier rectifier.
Schottky barrier rectifier.
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig 1. Forward current as a function of forward
voltage; typical values.
001aaa481
80
Fig 2. Reverse current as a function of reverse
voltage; typical values.
001aaa486
600
Cd
(pF)
hFE
(1)
60
400
40
(2)
200
20
(3)
0
0
5
10
15
20
0
−10−1
−1
−10
VR (V)
−102
−103
IC (mA)
Schottky barrier rectifier; f = 1 MHz; Tamb = 25 °C.
PNP transistor; VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values.
Fig 4. DC current gain as a function of collector
current; typical values.
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
5 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
001aaa487
−1.1
001aaa488
−103
VBE
(V)
VCEsat
(mV)
−0.9
(1)
−102
(2)
−0.7
−0.5
(1)
(2)
(3)
(3)
−10
−0.3
−0.1
−10−1
−1
−10
−102
−1
−10−1
−103
−1
−10
IC (mA)
−102
−103
IC (mA)
PNP transistor; VCE = −2 V.
PNP transistor; IC/IB = 20.
(1) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(3) Tamb = −55 °C.
Fig 5. Base-emitter voltage as a function of collector
current; typical values.
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values.
001aaa489
103
RCEsat
(Ω)
102
10
1
(1)
(2)
(3)
10−1
−10−1
−1
−10
−102
−103
IC (mA)
PNP transistor; VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 7. Equivalent on-resistance as a function of collector current; typical values.
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
6 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
8. Application information
VCC
VIN
VOUT
IN
CONTROLLER
mgu867
mgu866
Fig 8. DC-to-DC converter.
Fig 9. Inductive load driver (relays, motors and
buzzers) with free-wheeling diode.
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
7 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
9. Package outline
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Fig 10. Package outline.
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
8 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
10. Revision history
Table 8:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
PMEM1505PG_1
20040526
Product data
-
9397 750 12751
-
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
9 of 11
PMEM1505PG
Philips Semiconductors
PNP transistor/Schottky rectifier module
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 12751
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 26 May 2004
10 of 11
Philips Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 26 May 2004
Document order number: 9397 750 12751
Published in The Netherlands