PMEM1505PG PNP transistor/Schottky rectifier module Rev. 01 — 26 May 2004 Product data sheet 1. Product profile 1.1 General description Combination of an PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. NPN complement: PMEM1505NG. 1.2 Features ■ ■ ■ ■ ■ ■ 300 mW total power dissipation Current capability up to 0.5 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor ◆ Low collector-emitter saturation voltage. ■ Diode ◆ Ultra high-speed switching ◆ Very low forward voltage ◆ Guard ring protected. 1.3 Applications ■ ■ ■ ■ ■ DC-to-DC converters Inductive load drivers General purpose load drivers Reverse polarity protection circuits MOSFET drivers. 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - −15 V - - −0.5 A PNP transistor VCEO IC collector-emitter voltage collector current (DC) open base continuous [1] Schottky barrier rectifier VR continuous reverse voltage - - 20 V IF continuous forward current - - 0.5 A [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 2. Pinning information Table 2: Discrete pinning Pin Description Simplified outline 1 anode 5 cathode 1 4 collector 2 2 base 3 emitter Symbol 3 2 1 5 3 4 4 Top view 5 sym024 3. Ordering information Table 3: Ordering information Type number PMEM1505PG Package Name Description Version - plastic surface mounted package; 5 leads SOT353 4. Marking Table 4: Marking Type number Marking code [1] PMEM1505PG L6* [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PNP transistor VCBO collector-base voltage open emitter - −15 V VCEO collector-emitter voltage open base - −15 V VEBO emitter-base voltage open collector IC collector current (DC) - −6 V continuous [1] - −0.5 A continuous [2] - −0.6 A continuous; Ts ≤ 55 °C [3] - −1 A ICM peak collector current - −1 A IBM peak base current - −100 mA 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 2 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions Min Max Unit Tamb ≤ 25 °C [1] total power dissipation - 200 mW Tamb ≤ 25 °C [2] - 250 mW Ts ≤ 55 °C [3] - 800 mW - 150 °C - 20 V junction temperature Tj Schottky barrier rectifier VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current t = 8.3 ms square wave Ptot total power dissipation Tamb ≤ 25 °C - 0.5 A - 5 A [1] - 200 mW Tamb ≤ 25 °C [2] - 250 mW Ts ≤ 55 °C [3] - 800 mW [2] - 125 °C junction temperature Tj Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature Tamb ≤ 25 °C [2] [2] - 300 mW −65 +150 °C −65 +150 °C [1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both collector and cathode. [3] Solder point of collector or cathode tab. 6. Thermal characteristics Table 6: Symbol Thermal characteristics [1] Parameter Conditions Typ Unit Single device Rth(j-s) Rth(j-a) from junction to solder point from junction to ambient in free air [2] 120 K/W in free air [3] 395 K/W [4] 495 K/W [5] 410 K/W Combined device Rth(j-a) from junction to ambient [1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Solder point of collector or cathode tab. [3] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm2 mounting pad for both collector and cathode. [4] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. [5] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. 9397 750 12751 Product data sheet in free air © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 3 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PNP transistor collector-base cut-off current VCB = −15 V; IE = 0 A - - −100 nA VCB = −15 V; IE = 0 A; Tj = 150 °C - - −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA 150 - - 90 - - ICBO VCE = −2 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA [1] IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA - - −25 mV - - −150 mV - - −250 mV - 300 < 500 mΩ RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA [1] VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] - - −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA [1] - - −0.9 V fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz [1] 100 280 - MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz - 4.4 10 pF Schottky barrier rectifier continuous forward voltage VF reverse current IR diode capacitance Cd [1] see Figure 1 IF = 10 mA [1] - 240 270 mV IF = 100 mA [1] - 300 350 mV IF = 500 mA [1] - 400 460 mV IF = 1000 mA [1] - 480 550 mV VR = 5 V [1] - 5 10 µA VR = 8 V [1] - 7 20 µA VR = 15 V [1] - 10 50 µA - 19 25 pF see Figure 2 VR = 5 V; f = 1 MHz; see Figure 3 Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 4 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 001aaa479 103 001aaa480 105 IR (µA) IF (mA) 104 (1) (2) (1) (3) 102 103 (2) 102 10 (3) 10 1 1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 VF (V) 25 VR (V) Schottky barrier rectifier. Schottky barrier rectifier. (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig 1. Forward current as a function of forward voltage; typical values. 001aaa481 80 Fig 2. Reverse current as a function of reverse voltage; typical values. 001aaa486 600 Cd (pF) hFE (1) 60 400 40 (2) 200 20 (3) 0 0 5 10 15 20 0 −10−1 −1 −10 VR (V) −102 −103 IC (mA) Schottky barrier rectifier; f = 1 MHz; Tamb = 25 °C. PNP transistor; VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 3. Diode capacitance as a function of reverse voltage; typical values. Fig 4. DC current gain as a function of collector current; typical values. 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 5 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 001aaa487 −1.1 001aaa488 −103 VBE (V) VCEsat (mV) −0.9 (1) −102 (2) −0.7 −0.5 (1) (2) (3) (3) −10 −0.3 −0.1 −10−1 −1 −10 −102 −1 −10−1 −103 −1 −10 IC (mA) −102 −103 IC (mA) PNP transistor; VCE = −2 V. PNP transistor; IC/IB = 20. (1) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = −55 °C. Fig 5. Base-emitter voltage as a function of collector current; typical values. Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa489 103 RCEsat (Ω) 102 10 1 (1) (2) (3) 10−1 −10−1 −1 −10 −102 −103 IC (mA) PNP transistor; VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 7. Equivalent on-resistance as a function of collector current; typical values. 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 6 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 8. Application information VCC VIN VOUT IN CONTROLLER mgu867 mgu866 Fig 8. DC-to-DC converter. Fig 9. Inductive load driver (relays, motors and buzzers) with free-wheeling diode. 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 7 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 9. Package outline Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 REFERENCES IEC JEDEC EIAJ SC-88A EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 10. Package outline. 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 8 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 10. Revision history Table 8: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes PMEM1505PG_1 20040526 Product data - 9397 750 12751 - 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 9 of 11 PMEM1505PG Philips Semiconductors PNP transistor/Schottky rectifier module 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 12751 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 26 May 2004 10 of 11 Philips Semiconductors PMEM1505PG PNP transistor/Schottky rectifier module 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 May 2004 Document order number: 9397 750 12751 Published in The Netherlands