DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product specification High-speed diode BAV10 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V handbook, halfpage k a • Repetitive peak forward current: max. 600 mA. MAM246 The diode is type branded. APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 60 V VR continuous reverse voltage − 60 V IF continuous forward current − 300 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current t = 1 µs − 9 t = 100 µs − 3 A t=1s − 1 A − 350 see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 A Ptot total power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Sep 16 2 mW Philips Semiconductors Product specification High-speed diode BAV10 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 10 mA − IF = 200 mA − 1.0 V IF = 500 mA − 1.25 V IF = 200 mA; Tj = 100 °C − 950 mV VR = 60 V − 100 nA 100 µA 750 mV see Fig.5 VR = 60 V; Tj = 150 °C − Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.7 − 6 ns Vfr forward recovery voltage when switched from IF = 400 mA; tr = 30 ns; see Fig.8 − 2 V when switched from IF = 400 mA; tr = 10 ns; see Fig.8 − 1.5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 16 3 Philips Semiconductors Product specification High-speed diode BAV10 GRAPHICAL DATA MBG454 400 MBG457 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) (2) (3) 300 400 200 200 100 0 0 0 Tamb (oC) 100 200 0 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 16 4 104 Philips Semiconductors Product specification High-speed diode BAV10 MGD011 103 handbook, halfpage MGD002 4 handbook, halfpage IR (µA) Cd (pF) 102 3 (1) 10 (2) (3) 2 1 1 10−1 10−2 0 100 Tj (oC) 0 200 0 (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 16 5 10 20 VR (V) 30 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BAV10 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 16 6 t tp output signal Philips Semiconductors Product specification High-speed diode BAV10 PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 16 7