DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA220 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diode BA220 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BA220 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 10 V • Repetitive peak reverse voltage: max. 10 V handbook, halfpage k a • Repetitive peak forward current: max. 400 mA. MAM246 The diode is type branded. APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 10 V VR continuous reverse voltage − 10 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 400 mA IFSM non-repetitive peak forward current t = 1 µs − 9 A t = 100 µs − 3 A t=1s − 1 A − 350 see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Sep 03 2 mW Philips Semiconductors Product specification High-speed diode BA220 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 0.1 mA 460 520 mV IF = 1 mA 560 620 mV IF = 5 mA 640 700 mV IF = 10 mA 680 750 mV IF = 100 mA 825 950 mV see Fig.5 VR = 10 V − VR = 10 V; Tj = 150 °C − 1.5 50 µA µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 400 mA; tr = 30 ns; see Fig.8 − 2.0 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 03 3 Philips Semiconductors Product specification High-speed diode BA220 GRAPHICAL DATA MBG451 300 MBG466 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 (2) 100 (3) 100 0 0 0 100 Tamb (oC) 200 0 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 (1) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 104 Philips Semiconductors Product specification High-speed diode BA220 MGD007 103 handbook, halfpage MGD002 4 handbook, halfpage IR (µA) Cd (pF) 102 3 10 2 1 1 10−1 10−2 0 100 Tj (oC) 0 200 0 VR = 10 V. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 03 5 10 20 VR (V) 30 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BA220 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 t tp output signal Philips Semiconductors Product specification High-speed diode BA220 PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 03 7