DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile • excellent performance and reliability DESCRIPTION 1 collector 2 base 3 emitter connected to flange • Input matching cell improves input impedance and facilitates the design of wideband circuits. 1 olumns c APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz. b 3 2 DESCRIPTION e MAM131 Top view NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 435 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) 2.1 16 150 ≥0.6 ≥10 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 100 Ω − 35 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC DC collector current (DC) − 250 mA Ptot total power dissipation − 4 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb ≤ 75 °C up to 0.3 mm from case; t ≤ 10 s MBH902 103 handbook, halfpage MGD966 5 Ptot (W) handbook, halfpage IC (mA) (3) 4 102 3 (1) 2 (2) VCEO 10 1 10 15 1 20 25 30 0 −50 35 VCE (V) 0 50 100 150 200 Tmb (°C) Tmb = 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE < 100 Ω. (3) Second breakdown limit (independent of temperature). Fig.3 Fig.2 DC SOAR. 1997 Feb 19 3 Power dissipation derating as a function of mounting-base temperature. Philips Semiconductors Product specification NPN microwave power transistor LTE21009R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C 36 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.7 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. VCB = 20 V; IE = 0 − 50 µA VCB = 40 V; IE = 0 − 0.4 mA nA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 200 hFE DC current gain VCE = 5 V; IC = 150 mA 15 150 1997 Feb 19 UNIT 4 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R PACKAGE OUTLINE 0.1 handbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 Fig.4 SOT440A. 1997 Feb 19 5 MBC888 5.5 max 4.5 min Philips Semiconductors Product specification NPN microwave power transistor LTE21009R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R NOTES 1997 Feb 19 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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