DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 500 µs/10% • Internal input and output prematching networks allow an easier design of circuits QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION • Gold metallization with barrier realizes very stable characteristics and excellent lifetime CONDITIONS tp = 30 µs; δ = 1% Class C • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency MX1011B430W f (GHz) VCC (V) 1.03 PL (W) ≥480 45 GP (dB) ≥6.7 ηC (%) ≥45 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange • Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS 1 ook, 4 columns Intended for use in common base, class C, broadband, pulsed power amplifiers for TCAS applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band. c b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. Marking code: MX1011B430W. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 20 V VCES collector-emitter voltage RBE = 0 Ω − 65 V VEBO emitter-base voltage open collector − 3 V IC collector current tp ≤ 30 µs; δ ≤ 1% − 35 A Ptot total power dissipation tp ≤ 30 µs; δ ≤ 1%; Tmb < 75 °C − 1200 W Tstg storage temperature −65 +200 °C Tj operating junction temperature Tsld soldering temperature t ≤ 10 s; note 1 − 200 °C − 235 °C Note 1. Up to 0.2 mm from ceramic. MCD133 1600 handbook, halfpage Ptot (W) 1200 800 400 0 −50 0 100 Tmb (oC) 200 tp = 30 µs; δ = 1%; Ptot max = 1200 W. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 10.3 10.0 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.3 SOT439A. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W NOTES 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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