DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature • Ideal for surface mount automotive applications The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package cathode band olumns • Shipped in 12 mm embossed tape k • Marking: cathode, date code, type code a • Easy pick and place. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR 2000 Feb 14 PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage S1A − 50 V S1B − 100 V S1D − 200 V S1G − 400 V S1J − 600 V S1K − 800 V S1M − 1000 V S1A − 50 V S1B − 100 V S1D − 200 V S1G − 400 V S1J − 600 V S1K − 800 V S1M − 1000 V continuous reverse voltage 2 Philips Semiconductors Product specification SMA controlled avalanche rectifiers SYMBOL VRMS S1 series PARAMETER CONDITIONS MIN. MAX. UNIT root mean square voltage S1A − 35 V S1B − 70 V S1D − 140 V S1G − 280 V S1J − 420 V S1K − 560 V S1M − 700 V − 1 A − 30 A − 25 A −65 +175 °C −65 +175 °C IF(AV) average forward current averaged over any 20 ms period; Ttp = 110 °C; see Fig.2 IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax S1A to S1J S1K and S1M Tstg storage temperature Tj junction temperature See Fig.3 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 1.1 V S1A to S1J − 1 µA S1K and S1M − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.5 − 50 µA VF forward voltage IF = 1 A; see Fig.4 IR reverse current VR = VRRMmax; see Fig.5 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 1 − µs Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.6 8 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point; see Fig.7 Rth j-a thermal resistance from junction to ambient VALUE UNIT 27 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. 2000 Feb 14 3 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series GRAPHICAL DATA MCD822 2 MGD483 200 Tj (°C) handbook, halfpage handbook, halfpage IF(AV) (A) 160 1.5 120 1 80 0.5 D G J K M 40 0 0 40 80 120 0 160 200 Ttp (°C) 0 VR = VRRMmax; δ = 0.5; a = 1.57. Fig.2 Fig.3 MCD795 10 1 1 10−1 10−1 10−2 10−2 0.5 1 1.5 2 1200 MCD802 IR (µA) 10 0 VR (V) Maximum permissible junction temperature as a function of reverse voltage. 102 handbook, halfpage IF (A) 10−3 800 Device mounted as shown in Fig.8. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 102 handbook, halfpage 400 10−3 2.5 VF (V) Tj = 165 °C Tj = 25 °C 0 20 40 60 80 100 VR (%VRmax) Tj = 25 °C. Fig.4 Forward current as a function of forward voltage; typical values. 2000 Feb 14 Fig.5 4 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series MCD801 102 handbook, halfpage MBL120 102 handbook, halfpage Zth j-tp Cd (pF) (K/W) 10 10 1 10−2 10−1 10 1 VR (V) 1 102 1 10 102 103 tp (ms) 104 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. Fig.7 50 4.5 50 2.5 1.25 MSB213 Dimensions in mm. Material: AL2O3 or epoxy-glass. Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14 5 Transient thermal impedance as a function of pulse width. Philips Semiconductors Product specification SMA controlled avalanche rectifiers handbook, full pagewidth S1 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6 MAM057 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD124 H D A A1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D E H Q mm 2.3 2.0 0.05 1.6 1.4 0.2 4.5 4.3 2.8 2.4 5.5 5.1 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD124 2000 Feb 14 REFERENCES IEC JEDEC EIAJ DO-214AC EUROPEAN PROJECTION ISSUE DATE 99-10-22 7 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 14 8 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 9 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 10 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603502/250/01/pp12 Date of release: 2000 Feb 14 Document order number: 9397 750 06783