BLF7G22LS-130 Power LDMOS transistor Rev. 01 — 2 February 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. IDq VDS PL(AV) ηD ACPR (dB) (%) (dBc) 18.5 32 −32[1] 34 −39[2] Mode of operation f Gp (MHz) (mA) (V) (W) 2-carrier W-CDMA 2110 to 2170 950 28 30 1-carrier W-CDMA 2110 to 2170 950 28 33 18.5 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF7G22LS-130 Name Description Version - SOT502B earless flanged LDMOST ceramic package; 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - <tbd> A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. BLF7G22LS-130_1 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 30 W 0.35 K/W All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 Unit © NXP B.V. 2010. All rights reserved. 2 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.3 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25 29.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 10 11 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.16 Ω 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Gp power gain IRL input return loss Min Typ Max Unit - 30 - W PL(AV) = 30 W 17 18.5 - dB PL(AV) = 30 W 9 15 - dB ηD drain efficiency PL(AV) = 30 W 29 32 - % ACPR adjacent channel power ratio PL(AV) = 30 W - −32 −30 dBc 7.1 Ruggedness in class-AB operation The BLF7G22LS-130 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz. BLF7G22LS-130_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.2 1 Tone CW 001aal341 19 001aal342 60 Gp (dB) ηD (%) 18 (1) (1) (2) (2) 40 (3) (3) 17 16 20 15 14 0 0 40 80 120 160 0 40 80 120 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz. (1) f = 2110 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2170 MHz. (3) f = 2170 MHz. Fig 1. 160 PL (W) Power gain as a function of load power; typical values Fig 2. Drain efficiency as a function of load power; typical values 7.3 1-carrier W-CDMA 001aal343 20 50 ηD (%) Gp (dB) 19 40 Gp 001aal344 −20 ACPR (dBc) −30 30 18 −40 17 20 16 10 −50 ηD 15 0 0 10 20 30 40 50 60 70 PL(AV) (W) −60 VDS = 28 V; IDq = 950 mA; f = 2140 MHz. Fig 3. Product data sheet 10 20 30 40 50 60 70 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f = 2140 MHz; channel bandwidth = 5 MHz. Power gain and drain efficiency as functions of average load power; typical values BLF7G22LS-130_1 0 Fig 4. Adjacent power channel ratio as function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 001aal345 18.4 Gp (dB) 001aal346 60 ηD (%) (1) 18 (2) 40 (3) (1) 17.6 (2) (3) 20 17.2 16.8 0 0 30 60 90 0 30 60 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz. (1) f = 2112.5 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2167.5 MHz. (3) f = 2167.5 MHz. Fig 5. Power gain as function of load power; typical values Fig 6. 001aal347 8 PAR (dB) 90 PL (W) Drain efficiency as function of load power; typical values 001aal348 0 ACPR5M (dBc) (1) (2) 6 (3) −20 (1) 4 (2) (3) −40 2 0 0 30 60 90 −60 0 30 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2167.5 MHz. (3) f = 2167.5 MHz. Peak-to-average power ratio as function of load power; typical values BLF7G22LS-130_1 Product data sheet 90 PL (W) (1) f = 2112.5 MHz. Fig 7. 60 Fig 8. Adjacent power channel ratio (5 MHz) as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aal349 20 50 ηD (%) Gp (dB) ACPR (dBc) 40 −20 18 30 −30 17 20 −40 10 −50 0 −60 19 Gp 16 001aal350 −10 ηD 15 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f1 = 2137.5 MHz; f2 = 2142.5 MHz; carrier spacing 5 MHz. Fig 9. Power gain and drain efficiency as functions of average load power; typical values 001aal351 18.6 Gp (dB) 0 10 20 30 40 50 VDS = 28 V; IDq = 950 mA; f1 = 2137.5 MHz; f2 = 2142.5 MHz; carrier spacing 5 MHz. Fig 10. Adjacent power channel ratio as function of average load power; typical values 001aal352 30 (3) IRL (dB) (3) 60 70 PL(AV) (W) (2) (1) 18.2 20 (2) (1) 17.8 10 0 17.4 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. 0 10 20 (1) f = 2115 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2165 MHz. (3) f = 2165 MHz. BLF7G22LS-130_1 Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz. Fig 11. Power gain as function of load power; typical values 30 Fig 12. Input return loss as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 001aal353 50 ηD (%) 001aal354 0 APCR5M (dBc) 40 (1) −20 (2) 30 (1) (2) (3) (3) 20 −40 10 0 0 10 20 30 40 50 60 PL (W) 70 −60 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. 0 10 20 (1) f = 2115 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2165 MHz. (3) f = 2165 MHz. 001aal355 18.6 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz. Fig 13. Drain efficiency as function of load power; typical values 30 Fig 14. Adjacent power channel ratio (5 MHz) as function of load power; typical values 001aal356 50 ηD (%) Gp (dB) (3) 40 (2) (1) (1) 18.2 (2) 30 (3) 20 17.8 10 0 17.4 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. 0 10 20 (1) f = 2117.5 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2162.5 MHz. (3) f = 2162.5 MHz. BLF7G22LS-130_1 Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz. Fig 15. Power gain as function of load power; typical values 30 Fig 16. Drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 001aal357 0 APCR5M (dBc) APCR5M (dBc) −20 −20 (1) (2) (1) (3) −40 −60 001aal358 0 (2) (3) −40 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. −60 0 10 20 (1) f = 2117.5 MHz. (2) f = 2140 MHz. (2) f = 2140 MHz. (3) f = 2162.5 MHz. (3) f = 2162.5 MHz. BLF7G22LS-130_1 Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz. Fig 17. Adjacent power channel ratio (5 MHz) as function of load power; typical values 30 Fig 18. Adjacent power channel ratio (10 MHz) as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.5 Test circuit C3 C6 R1 C8 C9 C11 C2 C1 C5 BLF7G22LS-130 OUTPUT V1 RO4350 30MIL RSN BLF7G22LS-130 INPUT V1 RO4350 30MIL RSN C4 C7 C10 001aal359 See Table 8 for list of components. The drawing is not to scale. Fig 19. Component layout Table 8. List of components See Figure 19 for component layout. BLF7G22LS-130_1 Product data sheet Component Description Value Remarks C1, C2, C3, C4, C5 multilayer ceramic chip capacitor 9.1 pF ATC100B C6, C7 multilayer ceramic chip capacitor 220 nF AVX1206 C8, C9, C10 multilayer ceramic chip capacitor 4.7 μF; 50 V Kemet C11 electrolytic capacitor 220 μF; 63 V BC R1 SMD resistor 6.2 Ω Philips 1206 All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 8. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 20. Package outline SOT502B BLF7G22LS-130_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G22LS-130_1 20100202 Product data sheet - - BLF7G22LS-130_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the BLF7G22LS-130_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G22LS-130_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 February 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 February 2010 Document identifier: BLF7G22LS-130_1