BLF7G22L-130N Power LDMOS transistor Rev. 1 — 25 February 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. IDq VDS PL(AV) ηD ACPR (dB) (%) (dBc) 18.5 32 −32[1] 33 −39[2] Mode of operation f Gp (MHz) (mA) (V) (W) 2-carrier W-CDMA 2110 to 2170 950 28 30 1-carrier W-CDMA 2110 to 2170 950 28 33 18.5 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-130N - SOT502A flanged LDMOST ceramic package; 2 mounting holes; 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 28 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 30 W 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage BLF7G22L-130N Product data sheet Conditions Min Typ Max Unit VGS = 0 V; ID = 1.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.3 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 μA All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor Table 6. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25 29.5 - IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 10 11 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.16 Ω A 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Gp power gain RLin input return loss Min Typ Max Unit - 30 - W PL(AV) = 30 W 17 18.5 - dB PL(AV) = 30 W - −15 −9 dB ηD drain efficiency PL(AV) = 30 W 29 32 - % ACPR adjacent channel power ratio PL(AV) = 30 W - −31 −28 dBc 7.1 Ruggedness in class-AB operation The BLF7G22L-130N is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz. 7.2 Impedance information Table 8. Typical impedance information IDq = 950 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. f (MHz) ZS (Ω) ZL (Ω) 2050 1.3 − j3.6 2.2 − j2.6 2140 1.9 − j4.2 2.0 − j2.6 2230 3.1 − j4.7 1.9 − j2.8 drain ZL gate ZS 001aaf059 Fig 1. BLF7G22L-130N Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 7.3 1 Tone CW 001aal341 19 001aal342 60 Gp (dB) ηD (%) 18 (1) (1) (2) (2) 40 (3) (3) 17 16 20 15 14 0 0 40 80 120 160 0 40 80 PL (W) 160 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Fig 2. 120 Power gain as a function of load power; typical values Fig 3. Drain efficiency as a function of load power; typical values 001aal352 0 RLin (dB) −10 (1) (2) −20 (3) −30 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Input return loss as a function of load power; typical values BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 7.4 1-carrier W-CDMA Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 001aal345 20 Gp (dB) 19 001aal346 60 ηD (%) (3) (2) (1) 40 18 (1) (2) 17 (3) 20 16 15 0 0 30 60 90 0 30 60 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (1) f = 2112.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Fig 5. 90 PL (W) Power gain as a function of load power; typical values Fig 6. 001aal348 0 Drain efficiency as a function of load power; typical values 001aal347 8 PAR (dB) ACPR5M (dBc) (1) (2) 6 (3) −20 (1) 4 (2) (3) −40 2 −60 0 0 30 60 90 0 30 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-130N Product data sheet 90 PL (W) (1) f = 2112.5 MHz Fig 7. 60 Fig 8. Peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 7.5 2-carrier W-CDMA (5 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 001aal351 20 001aal353 50 ηD (%) Gp (dB) (3) (2) (1) 19 40 (1) 18 (2) 30 (3) 17 20 16 10 15 0 0 10 20 30 40 50 60 PL (W) 0 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. 10 20 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (1) f = 2115 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2165 MHz (3) f = 2165 MHz Fig 9. 30 Power gain as a function of load power; typical values Fig 10. drain efficiency as a function of load power; typical values 001aal354 0 ACPR5M (dBc) −20 (1) (2) (3) −40 −60 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 7.6 2-carrier W-CDMA (10 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 001aal355 20 001aal356 50 ηD (%) Gp (dB) (3) (2) (1) 19 40 (1) 18 (2) 30 (3) 17 20 16 10 15 0 0 10 20 30 40 50 60 PL (W) 0 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. 10 20 30 (1) f = 2117.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz (3) f = 2162.5 MHz 001aal357 0 ACPR5M (dBc) 60 PL (W) 70 Fig 13. Drain efficiency as a function of load power; typical values 001aal358 0 ACPR10M (dBc) −20 −20 (1) (2) (1) (3) −40 −60 50 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz Fig 12. Power gain as a function of load power; typical values 40 (2) (3) −40 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. −60 0 10 20 (1) f = 2117.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz (3) f = 2162.5 MHz BLF7G22L-130N Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values 30 Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 7.7 Test circuit C3 C6 R1 C8 C9 C11 C2 C1 C5 BLF7G22LS-130 OUTPUT V1 RO4350 30MIL RSN BLF7G22LS-130 INPUT V1 RO4350 30MIL RSN C4 C7 C10 001aal359 See Table 9 for list of components. The drawing is not to scale. Fig 16. Component layout Table 9. List of components See Figure 16 for component layout. BLF7G22L-130N Product data sheet Component Description Value Remarks C1, C2, C3, C4, C5 multilayer ceramic chip capacitor 9.1 pF ATC100B C6, C7 multilayer ceramic chip capacitor 220 nF AVX1206 C8, C9, C10 multilayer ceramic chip capacitor 4.7 μF; 50 V Kemet C11 electrolytic capacitor 220 μF; 63 V BC R1 SMD resistor 6.2 Ω Philips 1206 All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 17. Package outline SOT502A BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G22L-130N v.1 20110225 Product data sheet - - BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 10 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 11. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Export might require a prior authorization from national authorities. BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G22L-130N Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 February 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 BLF7G22L-130N NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA (5 MHz carrier spacing) . . . 6 2-carrier W-CDMA (10 MHz carrier spacing) . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 February 2011 Document identifier: BLF7G22L-130N