BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. tp δ VDS PL Gp RLin ηD Mode of operation f Pdroop(pulse) tr tf (MHz) (μs) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 BLL6H0514LS-130 (SOT1135B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 3 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H0514L-130 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135A BLL6H0514LS-130 - earless flanged ceramic package; 2 leads SOT1135B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLL6H0514L-130_0514LS-130 Preliminary data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 100 V VGS gate-source voltage −0.5 +13 V ID drain current - 18 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 °C; PL = 130 W Typ Unit tp = 100 μs; δ = 10 % 0.17 K/W tp = 200 μs; δ = 10 % 0.22 K/W tp = 300 μs; δ = 10 % 0.25 K/W tp = 100 μs; δ = 20 % 0.23 K/W tp = 1 ms; δ = 10 % 0.36 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 630 mA 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 135 mA 1.3 1.8 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 15.8 18 - A nA IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 gfs forward transconductance VDS = 10 V; ID = 135 mA 806 - 1578 mS RDS(on) drain-source on-state resistance VGS = VGS(th) + 6.25 V; ID = 135 mA - 200 275 mΩ Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. BLL6H0514L-130_0514LS-130 Preliminary data sheet Symbol Parameter PL output power Conditions VDS drain-source voltage Gp power gain RLin input return loss PL = 130 W 7 10 - dB ηD drain efficiency PL = 130 W 45 50 - % Pdroop(pulse) pulse droop power PL = 130 W - 0 0.3 dB tr rise time PL = 130 W - 20 50 ns tf fall time PL = 130 W - 6 50 ns All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 Min Typ Max Unit 130 - - W PL = 130 W - - 50 V PL = 130 W 15 17 - dB © NXP B.V. 2010. All rights reserved. 3 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 μs; δ = 10 %. 7. Application information 7.1 Impedance information Table 8. Typical impedance f ZS ZL MHz Ω Ω 1200 1.21 − j3.44 2.40 − j0.63 1300 1.56 − j4.49 2.30 − j0.87 1400 2.21 − j4.86 2.00 − j1.71 drain ZL gate ZS 001aaf059 Fig 1. BLL6H0514L-130_0514LS-130 Preliminary data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 7.2 Performance curves 001aam262 20 Gp (dB) ηD (%) Gp 16 RLin (dB) 50 16 12 40 12 8 30 8 4 20 4 ηD 0 1.15 1.25 0 1.15 10 1.45 1.35 001aam263 20 60 1.25 1.35 f (GHz) VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. Fig 2. Power gain and drain efficiency as function of frequency; typical values VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. Fig 3. 001aam264 20 1.45 f (GHz) Input return loss as a function of frequency; typical values 001aam265 60 ηD (%) Gp (dB) 16 50 (1) (2) (3) 12 40 8 30 4 (1) (2) (3) 20 0 10 0 40 80 120 160 0 40 PL (W) VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (2) f = 1.3 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz (3) f = 1.4 GHz Power gain as a function of load power; typical values Preliminary data sheet 160 VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1.2 GHz BLL6H0514L-130_0514LS-130 120 PL (W) (1) f = 1.2 GHz Fig 4. 80 Fig 5. Drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 001aam266 160 PL (W) 120 80 (1) (2) (3) 40 0 0 1 2 3 4 Pi (W) VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz Fig 6. Load power as a function of input power; typical values 8. Test information R2 C3 C9 C11 C8 C2 C1 C4 C10 C5 C13 C12 R1 C6 C7 001aam267 Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 7. BLL6H0514L-130_0514LS-130 Preliminary data sheet Component layout All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Table 9. List of components See Figure 7 for component layout. BLL6H0514L-130_0514LS-130 Preliminary data sheet Component Description Value Remarks C1 multilayer ceramic chip capacitor 10 μF; 50 V C2, C11 multilayer ceramic chip capacitor 1 nF [1] C3, C4, C6, C9, C10 multilayer ceramic chip capacitor 100 pF [2] C5, C7, C8 multilayer ceramic chip capacitor 43 pF [2] C12 electrolytic capacitor 220 μF; 63 V C13 multilayer ceramic chip capacitor 1 nF R1 SMD resistor 10 Ω SMD 0603 R2 wirewound lead resistor 2.61 Ω; 0.25 W fitted in series with C13 [1] American Technical Ceramics type 700A or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 [3] fitted vertically in series with R2 © NXP B.V. 2010. All rights reserved. 7 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 B q C c 1 H p U2 E1 w1 3 E B A A 2 b w2 C 0 5 mm 10 mm scale Dimensions Unit(1) Q A max 4.65 nom min 3.76 H p Q 5.26 b 0.18 9.65 9.65 9.65 9.65 1.14 c D D1 E E1 F 19.94 3.30 1.70 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45 q U1 U2 w1 w2 20.45 9.91 15.24 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067 inches nom 0.6 min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057 0.25 0.51 20.19 9.65 0.805 0.39 0.01 0.02 0.795 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1135A Fig 8. sot1135a_po European projection Package outline SOT1135A BLL6H0514L-130_0514LS-130 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H U2 E1 2 b w2 D 0 Q 5 10 mm scale Dimensions Unit(1) A H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.39 0.39 0.38 0.38 mm E max 4.65 nom min 3.76 b c D D1 E E1 F w2 0.51 0.02 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1135B Fig 9. sot1135b_po European projection Package outline SOT1135B BLL6H0514L-130_0514LS-130 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym Abbreviations Description LDMOS Laterally Diffused Metal-Oxide Semiconductor RF Radio Frequency VSWR Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL6H0514L-130_0514LS-130 v.1 20100809 Preliminary data sheet - - BLL6H0514L-130_0514LS-130 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 13. 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Export might require a prior authorization from national authorities. BLL6H0514L-130_0514LS-130 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLL6H0514L-130_0514LS-130 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 August 2010 Document identifier: BLL6H0514L-130_0514LS-130