IRF IRG4ZC71KD

PD - 91723
IRG4ZC71KD
PRELIMINARY
Surface Mountable
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor
control, tsc =10µs, VCC = 360V , TJ = 125°C,
VGE = 15V
• IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery antiparallel diodes for use in
bridge configurations
• Combines low conduction losses with high
switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy
paralleling
• Good coplanarity
• Easy solder inspection and cleaning
n-channel
C
VCES = 600V
VCE(ON)typ = 1.75V
G
@VGE = 15V, IC = 60A
E(k)
E
Benefits
• Highest power density and efficiency available
• HEXFRED Diodes optimized for performance with
IGBTs. Minimized recovery characteristics
• IGBTs optimized for specific application conditions
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
600
100
60
200
200
50
200
10
± 20
350
140
-55 to +150
V
A
µs
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
0.44
6.0(0.21)
0.36
0.69
–––
–––
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
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1
IRG4ZC71KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltageƒ 600
—
—
V
Temperature Coeff. of Breakdown Voltage —
0.5
— V/°C
Collector-to-Emitter Saturation Voltage
— 1.75 2.3
— 2.15 —
V
— 1.75 —
Gate Threshold Voltage
3.0
—
6.0
Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C
Forward Transconductance„
31
46
—
S
Zero Gate Voltage Collector Current
—
—
500
µA
—
—
13
mA
Diode Forward Voltage Drop
—
1.4 1.7
V
—
1.4
—
Gate-to-Emitter Leakage Current
—
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 10mA
IC = 60A
VGE = 15V
IC = 100A
See Fig. 2, 5
IC = 60A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.5mA
VCE = 100V, IC = 60A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 60A
See Fig. 13
IC = 60A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
343
44
161
140
63
475
133
1.49
3.11
4.60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
145
65
630
196
7.6
2.0
6850
730
190
90
120
7.3
11
360
780
370
220
Max. Units
Conditions
515
IC = 60A
66
nC VCC = 400V
See Fig.8
242
VGE = 15V
—
—
TJ = 25°C
ns
710
IC = 60A, VCC = 480V
200
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
6.0
See Fig. 9,10,18
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
—
TJ = 150°C,
See Fig. 10,11,18
—
IC = 60A, VCC = 480V
ns
—
VGE = 15V, RG = 5.0Ω,
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
140
ns
TJ = 25°C See Fig.
180
TJ = 125°C
14
IF = 50A
11
A
TJ = 25°C See Fig.
16
TJ = 125°C
15
VR = 200V
550
nC TJ = 25°C See Fig.
1200
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
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IRG4ZC71KD
50
LOAD CURRENT (A)
F or b oth:
D uty c y c le : 50 %
T J = 12 5° C
T sink = 90 °C
G a te d riv e a s s pe c ified
38
P ow er D is s ipation = 44 W
S q u a re w a v e :
60% of rated
voltage
25
I
13
Id e a l d io d es
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 2 5 °C
100
100
TJ = 1 5 0 °C
10
VG E = 1 5 V
2 0 µ s P U L S E W ID T H A
1
1
2
3
V C E , C o lle cto r-to -E m itte r V o lta g e (V )
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
Ic , Collector-to-Emitter Current (A)
1000
4
TJ = 150 °C
TJ = 25 ° C
10
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4ZC71KD
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
100
80
60
40
20
50
75
100
125
150
2.0
IC = 60 A
IC = 30 A
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
TC , Case Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
IC = 120 A
1.0
-60 -40 -20
0
25
VGE = 15V
80 us PULSE WIDTH
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
T he rm a l R es p on se (Zth JC )
1
D = 0.50
0.1
0.20
PDM
0.10
t
1
t2
0.05
0.02
0.01
Notes:
1. Duty factor D = t
S IN G LE P U LS E
(TH E R M A L R E S P O N S E )
1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.0001
0.001
0.01
0.1
1
10
A
100
t 1 , R e cta n g u la r P u ls e D u ra tio n (se c)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4ZC71KD
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
8000
Cies
6000
4000
2000
Coes
VGE , Gate-to-Emitter Voltage (V)
20
10000
VCC = 400V
I C = 60A
16
12
8
4
Cres
0
0
1
10
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
V CC
V GE
TJ
IC
100
= 480V
= 15V
= 25 ° C
= 60A
10
8
6
4
0
10
20
30
40
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
12
100
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
50
Ω
RG = 5.0Ohm
VGE = 15V
VCC = 480V
IC = 120 A
10
IC = 60 A
IC = 30 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4ZC71KD
1000
Ω
= 5.0Ohm
= 150 ° C
= 480V
= 15V
VGE = 20V
T J = 125 oC
I C , Collector Current (A)
RG
TJ
VCC
VGE
15
100
10
5
SAFE OPERATING AREA
10
0
20
40
60
80
100
1
120
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
1000
Instantaneous
forward
current--IIF (A)
Instantaneous
Forward
Current
(A)
F
Total Switching Losses (mJ)
20
100
10
TJ = 1 5 0 °C
TJ = 1 2 5 °C
TJ =
2 5 °C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward
Voltage
Drop
- V-FMV
(V)
F o rw a rd
V o lta
ge D
ro p
F M (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4ZC71KD
150
100
I F = 100A
I F = 50A
I F = 25A
I F = 100A
120
I F = 50A
I F = 25A
Irr- ( A)
trr- (nC)
90
10
60
30
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
0
100
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
di f /dt - (A /µ s)
1
100
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
4000
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
I F = 100A
IF = 100A
I F = 50A
I F = 50A
3000
di (rec) M/dt- (A /µs)
IF = 25A
Qrr- (nC)
1000
di f /dt - (A/µ s)
2000
I F = 25A
1000
1000
0
100
di f /dt - (A /µ s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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100
100
1000
di f /dt - (A/µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4ZC71KD
90% V ge
Same type
device as
D .U.T.
+V ge
V ce
430µF
80%
of Vce
D .U .T.
Ic
90% Ic
10% V ce
Ic
5% Ic
td (off)
tf
E off =
Fig. 18a - Test Circuit for Measurement of
∫ Vce Ic dt
t1+5µ S
V ce ic dt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T .
10% + V g
trr
Q rr =
Ic
trr
id
Icdtdt
tx
∫
+V g
tx
10% V c c
10% Irr
Vcc
D U T V O LT A G E
AND CURRENT
Vce
V pk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
tr
td(on)
5% V c e
t1
∫
t2
c e ieIcdt dt
E on = VVce
t1
t2
E rec =
D IO D E R E V E R S E
RECOVERY ENERG Y
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫ Vc Ic dt
t4
V d id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4ZC71KD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
600 0µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
Notes:
➀ Repetitive rating: VGE=20V; pulse width limited by maximum junction
temperature (figure 20)
➁ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%
➃ Pulse width 5.0µs, single shot
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9
IRG4ZC71KD
Case Outline — SMD-10
17.30
Dimensions are shown in millimeters
14.20
E(k) G
4.27
n/c
0.90
5.55
29.00
C
0.90
E
E
Recommended footprint
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Data and specifications subject to change without notice.
4/98
10
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