PD- 95139
SMPS MOSFET
IRF830AS/LPbF
HEXFET® Power MOSFET
Applications
Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High Speed Power Switching
l Lead-Free
l
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
VDSS
RDS(on) max
ID
1.40Ω
5.0A
500V
l
D2Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
5.0
3.2
20
3.1
74
0.59
± 30
5.3
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topologies:
l
l
Two Transistor Forward
Half Bridge and Full Bridge
Notes
through
are on page 10
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1
04/21/04
IRF830AS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.60
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
–––
V/°C Reference to 25°C, ID = 1mA
1.4
Ω
VGS = 10V, ID = 3.0A
4.5
V
VDS = VGS, ID = 250µA
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
10
21
21
15
620
93
4.3
886
27
39
Max. Units
Conditions
–––
S
VDS = 50V, ID = 3.0A
24
ID = 5.0A
6.3
nC
VDS = 400V
11
VGS = 10V, See Fig. 6 and 13
–––
VDD = 250V
–––
ID = 5.0A
ns
–––
RG = 14Ω
–––
RD = 49Ω,See Fig. 10
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
230
5.0
7.4
mJ
A
mJ
Typ.
Max.
Units
–––
–––
1.7
40
°C/W
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 5.0
showing the
A
G
integral reverse
––– –––
20
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 5.0A, VGS = 0V
––– 430 650
ns
TJ = 25°C, IF = 5.0A
––– 2.0 3.0
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF830AS/LPbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
4.5V
0.1
20µs PULSE WIDTH
T = 25 C
°
J
0.01
0.1
1
10
10
1
4.5V
20µs PULSE WIDTH
T = 150 C
J
0.1
100
1
Fig 1. Typical Output Characteristics
10
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
Fig 3. Typical Transfer Characteristics
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8.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
5.0
100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
4.0
°
ID = 5.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF830AS/LPbF
V GS =
C iss =
C rs s =
C oss =
20
0V,
f = 1M Hz
Cg s + C g d , Cd s SHO RTE D
C gd
Cds + C gd
1000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
10000
C iss
100
C os s
10
C rss
1
1
10
100
1000
ID = 5.0A
VDS = 400V
VDS = 250V
VDS = 100V
16
12
8
4
0
A
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
V D S , D ra in-to-S ource V oltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
0.4
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
10ms
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
4
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
1.2
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF830AS/LPbF
5.0
RD
VDS
VGS
I D , Drain Current (A)
4.0
D.U.T.
RG
3.0
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF830AS/LPbF
+
V
- DD
IA S
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
20V
D R IV E R
L
VDS
500
1 5V
TOP
400
BOTTOM
ID
2.2A
3.2A
5.0A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
790
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
V D S a v , A valanche V oltage (V )
10 V
785
780
775
+
V
- DS
770
0.0
VGS
2.0
3.0
4.0
5.0
I a v , A v alanc he C urrent (A )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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A
IRF830AS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFET
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7
IRF830AS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H I S IS AN IR F 53 0 S WIT H
L OT COD E 8 02 4
AS S E MB L E D ON WW 0 2 , 2 00 0
IN T H E AS S E MB L Y L IN E "L "
IN T E R N AT ION AL
R E CT IF IE R
L OGO
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
P AR T N U MB E R
F 53 0S
AS S E MB L Y
L OT COD E
D AT E COD E
YE AR 0 = 200 0
WE E K 02
L IN E L
OR
INT E R NAT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E
8
P AR T N U MB E R
F 53 0S
DAT E COD E
P = DE S IGNAT E S L E AD -F R E E
P R ODU CT (OP T IONAL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E COD E
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IRF830AS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E X AMP L E :
T H IS IS AN IR L 3103L
L OT COD E 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P " in as s embly line
pos ition indicates "L ead-F ree"
IN T E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
P AR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
OR
IN T E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
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P AR T NU MB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
P R ODU CT (OP T IONAL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
9
IRF830AS/LPbF
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D IR E C TI O N
1 .60 (.06 3)
1 .50 (.05 9)
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
0.3 6 8 (.0 1 4 5 )
0.3 4 2 (.0 1 3 5 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
1 5 .42 (.6 09 )
1 5 .22 (.6 01 )
TRL
1 .7 5 (.0 69 )
1 .2 5 (.0 49 )
1 0.9 0 (.42 9 )
1 0.7 0 (.42 1 )
4 .7 2 (.1 36 )
4 .5 2 (.1 78 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D I R E C T IO N
13 .5 0 (.5 32 )
12 .8 0 (.5 04 )
27 .4 0 (1.07 9)
23 .9 0 (.9 41 )
4
33 0.0 0
(14 .17 3)
MAX.
6 0.00 (2 .36 2)
M IN .
N O T ES :
1. C O M F O R M S T O EIA- 418 .
2. C O N T R O L LIN G D IM E N SIO N : M ILL IM E T ER .
3. D IM EN S IO N M E A SU R E D @ HU B .
4. IN C L U D ES F LA N G E D IST O R T IO N @ O U TE R ED G E.
30.4 0 (1.1 97 )
MAX.
2 6 .4 0 (1 .03 9)
2 4 .4 0 (.9 61 )
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 18mH
Coss eff. is a fixed capacitance that gives the same charging time
ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
Uses IRF830A data and test conditions
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 5.0A. (See Figure 12)
TJ ≤ 150°C
as Coss while VDS is rising from 0 to 80% VDSS
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
10
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