PD- 91901B
IRF840AS
IRF840AL
SMPS MOSFET
HEXFET® Power MOSFET
Applications
Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l
Benefits
Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
VDSS
RDS(on) max
ID
0.85Ω
8.0A
500V
l
D2Pak
IRF840AS
TO-262
IRF840AL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
8.0
5.1
32
125
3.1
1.0
± 30
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topologies
l
l
l
Two Transistor Forward
Haft Bridge
Full Bridge
Notes
through are on page 10
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1
12/16/99
IRF840AS/L
Static @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V(BR)DSS
∆V(BR)DSS/∆TJ
Min.
500
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.58
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.85
Ω
VGS = 10V, ID = 4.8A
4.0
V
VDS = VGS, ID = 250µA
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
11
23
26
19
1018
155
8.0
1490
42
56
Max. Units
Conditions
–––
S
VDS = 50V, ID = 4.8A
38
ID = 8.0A
9.0
nC
VDS = 400V
18
VGS = 10V, See Fig. 6 and 13
–––
VDD = 250V
–––
ID = 8.0A
ns
–––
RG = 9.1Ω
–––
RD = 31Ω,See Fig. 10
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
510
8.0
13
mJ
A
mJ
Typ.
Max.
Units
–––
–––
1.0
40
°C/W
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 8.0
showing the
A
G
integral reverse
––– –––
32
S
p-n junction diode.
––– ––– 2.0
V
TJ = 25°C, IS = 8.0A, VGS = 0V
––– 422 633
ns
TJ = 25°C, IF = 8.0A
––– 2.0 3.0
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF840AS/L
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
4.5V
10
4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
5.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
4.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
8.0
ID = 7.4A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF840AS/L
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
10000
Coss = Cds + Cgd
Ciss
1000
Coss
100
10
Crss
VGS , Gate-to-Source Voltage (V)
20
100000
8.0 A
ID = 7.4
VDS = 400V
VDS = 250V
VDS = 100V
16
12
8
4
1
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
1000
10
20
30
40
Q G , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
10us
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
V GS = 0 V
0.5
0.8
1.1
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100us
1ms
1
10ms
0.1
1.4
TC = 25 °C
TJ = 150 °C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF840AS/L
8.0
VGS
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
6.0
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
P DM
0.10
t1
0.05
t2
0.02
0.01
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
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5
IRF840AS/L
1200
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP
1000
D R IV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
BOTTOM
ID
3.6A
5.1A
8.0A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
600
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
610
V DSav , Avalanche Voltage ( V )
QGD
V DSav , Avalanche Voltage ( V )
QGS
580
560
540
+
V
- DS
600
590
580
570
560
550
540
0.0
520
VGS
0.0
3mA
2.0
3.0
4.0
5.0
I
, Avalanche Current ( A)
2.0 AV3.0
4.0
5.0
6.0
7.0
6.0
8.0
IAV , Avalanche Current ( A)
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1.0
1.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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IRF840AS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF840AS/L
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
3
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
3X
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRF840AS/L
TO-262 Package Outline
TO-262 Part Marking Information
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9
IRF840AS/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
1 .6 5 ( .0 6 5 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
1 5 .42 (.60 9 )
1 5 .22 (.60 1 )
TRL
1 .75 (.06 9 )
1 .25 (.04 9 )
1 0.9 0 (.4 2 9)
1 0.7 0 (.4 2 1)
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .1 0 (.63 4 )
15 .9 0 (.62 6 )
F E E D D IR E C T IO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
3 30 .00
( 14.1 73 )
MAX.
Notes:
6 0.0 0 (2.36 2)
M IN .
N O TE S :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 8.0A. (See Figure 12)
ISD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30.4 0 (1.19 7)
M A X.
4
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Uses IRF840A data and test conditions
TJ ≤ 150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
10
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