PD-95734 HFA06TB120PbF HEXFRED TM Ultrafast, Soft Recovery Diode Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 4 IF(AV) = 6.0A Qrr (typ.)= 116nC 2 1 Benefits VR = 1200V VF(typ.)* = 2.4V CATHODE 3 ANODE 2 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count IRRM(typ.) = 4.4A trr(typ.) = 26ns di(rec)M/dt (typ.)* = 100A/µs TO-220AC Description International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6 amps continuous current, the HFA06TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Absolute Maximum Ratings VR IF @ TC = 100°C IFSM IFRM P D @ TC = 25°C P D @ TC = 100°C TJ TSTG Parameter Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 8.0 80 24 62.5 25 -55 to +150 Units V A W °C * 125°C www.irf.com 1 10/18/04 HFA06TB120PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Min. Typ. Max. Units 1200 2.7 3.0 3.5 3.9 2.4 2.8 0.26 5.0 110 500 V Test Conditions IR = 100µA Voltage VFM IRM Max. Forward Voltage Max. Reverse Leakage Current IF = 6.0A V IF = 12A IF = 6.0A, TJ = 125°C µA VR = VR Rated TJ = 125°C, VR = 0.8 x VR RatedD R CT Junction Capacitance 9.0 14 pF VR = 200V LS Series Inductance 8.0 nH Measured lead to lead 5mm from pkg body Rated Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr Reverse Recovery Time Min. Typ. Max. Units 26 trr1 53 80 trr2 87 130 4.4 8.0 5.0 9.0 116 320 233 585 180 IRRM1 Peak Recovery Current IRRM2 Qrr1 Reverse Recovery Charge Qrr2 di(rec)M/dt1 di(rec)M/dt2 Peak Rate of Recovery Current During tb 100 Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V ns TJ = 25°C TJ = 125°C A IF = 6.0A TJ = 25°C TJ = 125°C nC VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter Min. Typ. Max. Units Tlead Lead Temperature 300 °C RthJC Thermal Resistance, Junction to Case 2.0 RthJA Thermal Resistance, Junction to Ambient 80 RthCS Thermal Resistance, Case to Heat Sink 0.5 Wt Weight 2.0 g 0.07 (oz) 6.0 12 Kg-cm 5.0 10 lbfin Mounting Torque 2 K/W 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased www.irf.com HFA06TB120PbF 100 1000 TJ = 150˚C Reverse Current - IR (µA) 100 100˚C 10 1 25˚C 0.1 0.01 0 200 400 600 800 1000 1200 1400 Reverse Voltage - VR (V) 100 1 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 10 125˚C T = 150˚C J T = 125˚C J T = 25˚C J 0.1 T = 25˚C J 10 1 0 2 4 Forward Voltage Drop - VFM (V) 6 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance ZthJC (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = 1t / t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 HFA06TB120PbF 25 110 IF = 6 A IF = 4 A 100 VR = 200V TJ = 125˚C TJ = 25˚C 20 90 IF = 6 A IF = 4 A 15 70 Irr - ( A) trr - ( nC ) 80 60 10 50 40 5 VR = 200V TJ = 125˚C TJ = 25˚C 30 20 100 0 100 1000 1000 dif /dt - (A/µs ) dif /dt - (A/µs ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt Fig. 6 - Typical Recovery Current Vs. dif /dt 10000 1000 VR = 200V TJ = 125˚C TJ = 25˚C 800 di(REC) M/dt - (A/µs ) Qrr - ( nC ) IF = 6 A IF = 4 A 600 400 IF = 6 A IF = 4 A 1000 100 VR = 200V TJ = 125˚C TJ = 25˚C 200 0 100 1000 dif /dt - (A/µs ) Fig. 8 - Typical Stored Charge vs. dif /dt 4 10 100 1000 dif /dt - (A/µs ) Fig. 7 - Typical di(REC) M/dt vs. dif /dt www.irf.com HFA06TB120PbF REVERSE RECOVERY CIRCUIT VR = 200V 0.01 Ω L = 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 trr IF tb ta 0 Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current di f /dt 4. Qrr - Area under curve defined by t rr and IRRM trr X IRRM 3. trr - Reverse recovery Qrr = time measured from zero 2 crossing point of negative going IF to point where a line 5. di(rec)M /dt - Peak rate of passing through 0.75 IRRM change of current during tb and 0.50 I RRM portion of trr extrapolated to zero current Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA06TB120PbF TO-220AC Package Outline Dimensions are shown in millimeters (inches) TO-220AC Part Marking Information PART NUMBER EXAMPLE: T HIS IS A HFA06T B120 LOT CODE 1789 ASS EMBLED ON WW 19, 2001 IN THE AS SEMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO DAT E CODE ASSEMBLY LOT CODE P = LEAD-F REE YEAR 1 = 2001 WEEK 19 LINE C PART NUMBER EXAMPLE: T HIS IS A HFA06T B120 LOT CODE 1789 AS SEMBLED ON WW 19, 2001 IN T HE ASS EMBLY LINE "C" 6 INT ERNAT IONAL RECT IFIER LOGO DAT E CODE AS SEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE www.irf.com HFA06TB120PbF Ordering Information Table Device Code HF A 06 TB 120 1 2 3 4 5 1 - Hexfred Family 2 - Process Designator A = subs. elec. Irrad. B = subs. Platinum 3 - Current Rating (06 = 6A) 4 - Package Outline (TB = TO-220, 2 Lead) 5 - Voltage Rating (120 = 1200V) Note: “PbF” suffix at the end of the part number indicates Lead-Free. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 www.irf.com 7