PHILIPS TZA1027

INTEGRATED CIRCUITS
DATA SHEET
TZA1027
Analog current buffer for CD-R and
CD-RW systems
Preliminary specification
File under Integrated Circuits, IC01
1999 Sep 17
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
FEATURES
• Eight amplifiers for servo and power calibration
functions
• Gain selector for CD-R and CD-RW discs
• Separate data amplifier for read speed up to thirty times
nominal data speed.
GENERAL DESCRIPTION
The TZA1027 is an analog current buffer IC for CD-R and
CD-RW systems with a 3-spot push-pull tracking system.
The IC interfaces directly to the photo diodes and
TZA1020. A HF current amplifier is implemented to detect
the actual HF data signal.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
4.5
5.0
5.5
V
0
−
3400
µA
VDD
supply voltage
Ii(cd)
central diode input current
Ii(sd)
satellite diode input current
WRON = 1
0
−
520
µA
BCAHF
bandwidth
Ci = 5 pF
72
−
−
MHz
td(f)
flatness delay
Ci = 5 pF; f = 0.1 to 32 MHz
−
30
200
ps
GSS
servo satellite detector gain
HG = 1
−
32
−
HG = 0
−
8
−
Tamb
ambient temperature
0
−
70
WRON = 1
°C
ORDERING INFORMATION
TYPE
NUMBER
TZA1027HL
1999 Sep 17
PACKAGE
NAME
DESCRIPTION
VERSION
LQFP32
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
SOT401-1
2
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
BLOCK DIAGRAM
handbook, full pagewidth
TZA1027
A1
A2
B1
B2
C1
C2
C3
C4
7
23
2
28
6
24
3
27
29
1
22
8
25
5
26
4
+
n.c.
PDWN
WRON
HG
19
9, 10, 11, 12,
17, 20, 32
18
21
31
30
A2LF
B1LF
B2LF
C1LF
C2LF
C3LF
C4LF
CAHF
HFGND
GAIN
SELECTOR
16
15
13
14
VDDA VDDD AGND DGND
Fig.1 Block diagram.
1999 Sep 17
A1LF
3
MGR881
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
PINNING
SYMBOL
PIN
DESCRIPTION
C1
1
central photo diode current input
A2
2
satellite diode current input
B2
3
satellite diode current input
C4
4
central photo diode current input
C3
5
central photo diode current input
B1
6
satellite diode current input
A1
7
satellite diode current input
C2
8
central photo diode current input
n.c.
9
not connected
n.c.
10
not connected
n.c.
11
not connected
n.c.
12
not connected
AGND
13
analog ground
DGND
14
digital ground
VDDD
15
digital power supply
VDDA
16
analog power supply
n.c.
17
not connected
HFGND
18
ground connection of CAHF output stage
CAHF
19
central aperture high-frequency output
n.c.
20
not connected
PDWN
21
digital input power-down
C2LF
22
C2 central detector signal output
A1LF
23
A1 satellite detector signal output
B1LF
24
B1 satellite detector signal output
C3LF
25
C3 central detector signal output
C4LF
26
C4 central detector signal output
B2LF
27
B2 satellite detector signal output
A2LF
28
A2 satellite detector signal output
C1LF
29
C1 central detector signal output
HG
30
digital input high gain selection
WRON
31
digital input write on gain selection
n.c.
32
not connected
1999 Sep 17
4
TZA1027
Philips Semiconductors
Preliminary specification
25 C3LF
TZA1027
26 C4LF
27 B2LF
28 A2LF
29 C1LF
30 HG
32 n.c.
handbook, full pagewidth
31 WRON
Analog current buffer for CD-R and CD-RW
systems
C1
1
24 B1LF
A2
2
23 A1LF
B2
3
22 C2LF
C4
4
21 PDWN
TZA1027HL
18 HFGND
C2
8
17 n.c.
n.c.
Fig.2 Pin configuration.
1999 Sep 17
5
VDDA 16
7
VDDD 15
A1
DGND 14
19 CAHF
AGND 13
6
n.c. 12
B1
n.c. 11
20 n.c.
n.c. 10
5
9
C3
MGR882
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
FUNCTIONAL DESCRIPTION
All detector signals are applied to wide-band amplifiers for servo and laser power calibration functions of the TZA1020.
Signals from the central detector are added and amplified to suitable levels for the decoder circuit. Current gain can be
selected for CD-R and CD-RW discs.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETERS
MIN.
MAX.
UNIT
VDD
supply voltage
0
5.5
V
Tstg
storage temperature
−6.5
+150
°C
Tamb
ambient temperature
0
70
°C
Ves
electrostatic handling:
Machine model
−100
+100
V
Human body model
−500
+500
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITION
thermal resistance from junction to
ambient
in free air
VALUE
UNIT
95
K/W
LOGIC FUNCTIONS
PDWN
WRON
HG
1
X; note 1
X; note 1
0
0
0
CD-R read
0
0
1
CD-RW read
0
1
0
CD-R write
0
1
1
CD-RW write
Note
1. X = don’t care.
1999 Sep 17
6
MODE
power-down
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
CHARACTERISTICS
VDDA = VDDD = 5 V; Tamb = 25 °C; Ii(cd) = 25 µA with x = 1LF to 4LF; Ii(sd) = 4 µA with y = A or B and z = 1LF or 2LF;
PDWN = 0; WRON = 0; HG = 0 and Ccd = Csd = 5 pF; the given maximum and minimum values are 4σ values; unless
otherwise specified. Signals available on the IC pins are upper case. Signals not visible on the IC pins are lower case.
SYMBOL
PARAMETERS
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VDDA
analog supply voltage
4.5
5.0
5.5
V
VDDD
digital supply voltage
4.5
5.0
5.5
V
∆VDD
difference between
VDDA and VDDD
−0.3
−
+0.3
V
IDDA
analog supply current
−
0.1
−
mA
−
13
−
mA
−
0
−
mA
−
14
−
mA
1.0
−
75
µA
IDDD
digital supply current
PDWN = 1
PDWN = 1
Detector inputs
INPUT CURRENT RANGE
Ii(cd)
central diode input current
Ii(sd)
satellite diode input current
0
−
3400
µA
0.6
−
9
µA
0
−
520
µA
2.5
2.9
3.3
V
WRON = 1
2.6
3.0
3.4
V
1.6
1.9
2.2
V
WRON = 1
1.7
2.0
2.3
V
−
420
−
Ω
−
220
−
Ω
−
620
−
Ω
−
370
−
Ω
−0.93
−1
−1.07
HG = 1
−2.8
−3
−3.2
WRON = 1
−0.94
−1
−1.06
WRON = 1; HG = 1
−0.93
−1
−1.07
3σ
−
−
3
33
44
−
MHz
HG = 1; Ii(cd) = 6 µA
18
22
−
MHz
WRON = 1; Ii(cd) = 1000 µA
150
230
−
MHz
WRON = 1; HG = 1; Ii(cd) = 250 µA 100
130
−
MHz
WRON = 1
WRON = 1
INPUT VOLTAGE LEVEL
Vi(cd)
Vi(sd)
central diode input voltage level
satellite diode input voltage level
INPUT RESISTANCE
Ri(cd)
central diode input resistance
WRON = 1; Ii(cd) = 1 mA
Ri(sd)
satellite diode input resistance
WRON = 1; Ii(cd) = 200 µA
Transfer functions
SERVO OUTPUTS CD
Gcd
servo central detector gain
Gmm
gain mismatch
Bcd
bandwidth
1999 Sep 17
7
%
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
SYMBOL
PARAMETERS
CONDITIONS
TZA1027
MIN.
tr
rise time
WRON = 1; 30 µA < Ii(cd) < 520 µA −
td
delay time
WRON = 1;
30 µA < Ii(cd) < 520 µA
TYP.
MAX.
UNIT
2
−
ns
−
2.5
−
ns
HG = 1
−2.85
−3.05
−3.25
WRON = 0; HG = 0
−0.96
−1.02
−1.08
WRON = 1; HG = 0
−0.88
−0.95
−1.02
WRON = 1; HG = 1
−0.88
−0.95
−1.02
HG = 1; Ii(cd) = 1 µA
SERVO OUTPUTS SD
GSS
BS
servo satellite detector gain
bandwidth
24
−
−
MHz
WRON = X; note 1; HG = X; note 1 46
−
−
MHz
tr
rise time
WRON = 1; 4 µA < Ii(cd) < 65 µA
−
3.6
−
ns
td
delay time
WRON = 1; 4 µA < Ii(cd) < 65 µA
−
4.5
−
ns
7.5
8.1
8.7
DATA OUTPUT; PIN CAHF
GSS
servo satellite detector gain
BCAHF
bandwidth
td(f)
flatness delay
HG = 1
29
32
35
WRON = 1; HG = X; note 1
−
0
−
80
−
−
MHz
HG = 1; Ii(cd) = 6 µA
HG = 1; Ii(cd) = 6 µA
In
noise current
HG = 1; Ii(cd) = 6 µA
72
−
−
MHz
−
30
200
ps
−
170
−
ps
−
1.4
−
µA
−
2
−
µA
Output pins
Vo(cd)
central diode output voltage
−0.2
−
VDDD − 1
V
Vo(sd)
satellite diode output voltage
−0.2
−
VDDD − 1
V
Vo(CAHF)
data output voltage
1
−
VDDD + 0.2 V
Ro(cd)
central diode output resistance
−
1
−
MΩ
Ro(sd)
satellite diode output resistance
−
5
−
MΩ
RCAHF
data output resistance
−
40
−
kΩ
V
Digital control signals
INPUT VOLTAGE LEVELS; PINS PDWN, WRON AND HG
VIL
LOW-level input voltage
−0.2
−
+1.2
VIH
HIGH-level input voltage
1.8
−
VDDD + 0.2 V
input leakage current
−1
−
+1
µA
delay time
−
0.3
−
µs
INPUT CURRENT
ILI
DELAY TIME
td
Note
1. X = don’t care.
1999 Sep 17
8
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
100 nF
I i(sd)(AC)
470 kΩ
50
Ω
A1
7
23
A1LF
A2
2
28
A2LF
B1
6
24
B1LF
B2
3
27
B2LF
C1
1
29
C1LF
22
C2LF
25
C3LF
26
C4LF
3.9
pF
100 nF
3.3 kΩ
470 kΩ
3.3 kΩ
470 kΩ
4.7 kΩ
100 nF 50 Ω
4.7 kΩ
3.9
pF
100 nF
3.3 kΩ
470 kΩ
100 nF 50 Ω
4.7 kΩ
3.9
pF
100 nF 50 Ω
100 nF
I i(cd)(AC)
3.3 kΩ
470 kΩ
50
Ω
3.3 kΩ
470 kΩ
C2
3.3 kΩ
470 kΩ
4.7 kΩ
100 nF 50 Ω
C3
3.3 kΩ
+5 V
8
5
4.7 kΩ
3.9
pF
100 nF
470 kΩ
100 nF 50 Ω
3.9
pF
100 nF
Vbias(cd)
4.7 kΩ
3.9
pF
100 nF
100 nF 50 Ω
C4
4
4.7 kΩ
3.9
pF
+
100 nF 50 Ω
19
CAHF
1 kΩ
PDWN 21
WRON 31
GAIN
SELECTOR
18 HFGND
HG 30
16
15
13
14
VDDA
VDDD
AGND
DGND
+5 V
Fig.3 Test diagram.
1999 Sep 17
4.7 kΩ
100 nF 50 Ω
3.9
pF
100 nF
Vbias(sd)
100 nF 50 Ω
TZA1027
3.3 kΩ
9
MGR883
+5 V
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
handbook, full pagewidth
+12 V
TZA1027
TZA1027
A1
7
23
A1LF
SA1
A2
2
28
A2LF
SA2
B1
6
24
B1LF
SB1
B2
3
27
B2LF
SB2
C1
1
29
C1LF
C1
C2
8
22
C2LF
C2
C3
5
25
C3LF
C3
C4
4
26
C4LF
C4
19
CAHF
4
8
5
9
TZA1020
+
3
6
7
SAA7392
PDWN 21
WRON 31
HG 30
18
GAIN
SELECTOR
SAA7399
10
to block
decoder/
encoder
HFGND
16
15
13
14
VDDA
VDDD
AGND
DGND
+5 V
MGR884
Fig.4 Application diagram.
1999 Sep 17
10
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
PACKAGE OUTLINE
SOT401-1
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
c
y
X
A
17
24
ZE
16
25
e
A A2
E HE
(A 3)
A1
w M
pin 1 index
θ
bp
32
Lp
9
L
1
8
detail X
ZD
e
v M A
w M
bp
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
1.60
0.15
0.05
1.5
1.3
0.25
0.27
0.17
0.18
0.12
5.1
4.9
5.1
4.9
0.5
7.15
6.85
7.15
6.85
1.0
0.75
0.45
0.2
0.12
0.1
Z D (1) Z E (1)
θ
0.95
0.55
7
0o
0.95
0.55
o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-12-19
97-08-04
SOT401-1
1999 Sep 17
EUROPEAN
PROJECTION
11
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
The footprint must incorporate solder thieves at the
downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C. A
mildly-activated flux will eliminate the need for removal of
corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1999 Sep 17
12
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
TZA1027
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3), SO, SOJ
suitable
suitable(2)
suitable
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Sep 17
13
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
NOTES
1999 Sep 17
14
TZA1027
Philips Semiconductors
Preliminary specification
Analog current buffer for CD-R and CD-RW
systems
NOTES
1999 Sep 17
15
TZA1027
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TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 68
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/01/pp16
Date of release: 1999
Sep 17
Document order number:
9397 750 04724