DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 1999 Apr 08 2003 Nov 25 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 FEATURES QUICK REFERENCE DATA • High current SYMBOL • Two current gain selections VCEO collector-emitter voltage − 20 V IC collector current (DC) − 1 A APPLICATIONS ICM peak collector current − 2 A • Linear voltage regulators hFE DC current gain • 1.4 W total power dissipation. PARAMETER MIN. MAX. UNIT • Low side switches BCP68 85 375 • Supply line switch for negative voltages BCP68-25 160 375 • MOSFET drivers • Audio pre-amplifiers. DESCRIPTION NPN medium power transistor (see “Simplified outline, symbol and pinning”) for package details. PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PHILIPS EIAJ BCP68 SOT223 SC-73 BCP68 BCP68-25 SOT223 SC-73 BCP68/25 SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BCP68 4 handbook, halfpage 2, 4 1 DESCRIPTION 1 base 2 collector 3 emitter 4 collector 3 1 Top view 2 3 MAM287 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE BCP69 PNP medium power transistor PNP complement BC868 NPN medium power transistor SOT89, 20 V BC368 NPN medium power transistor SOT54, 20 V 2003 Nov 25 2 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCP68 − BCP68-25 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 2 − 0.625 W Tamb ≤ 25 °C; notes 1 and 3 − 1 W Tamb ≤ 25 °C; notes 1 and 4 − 1.4 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. 2003 Nov 25 3 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 MDB846 1.6 handbook, halfpage (1) Ptot (W) 1.2 (2) 0.8 (3) 0.4 0 −60 0 60 120 180 Tamb (°C) (1) 6 cm2 collector mounting pad. (2) 1 cm2 collector mounting pad. (3) Standard PCB footprint. Fig.1 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) PARAMETER CONDITIONS thermal resistance from junction to ambient thermal resistance from junction to solder point VALUE UNIT Tamb ≤ 25 °C; notes 1 and 3 200 K/W Tamb ≤ 25 °C; notes 1 and 4 125 K/W Tamb ≤ 25 °C; notes 1 and 4 89 K/W Tamb ≤ 25 °C 15 K/W Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. 2003 Nov 25 4 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 7.00 3.85 3.60 3.50 handbook, full pagewidth ;;;; ;;;; 0.30 1.20 (4x) solder lands solder resist 4 occupied area solder paste 7.40 3.90 4.80 7.65 ;; ;; ;; ;;;;;; 1 2 3 1.20 (3x) 1.30 (3x) 5.90 6.15 MSA443 Dimensions in mm. Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering). 2003 Nov 25 5 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 32 mm handbook, halfpage 30 mm 20 mm 40 mm 1.3 mm 2.6 mm 0.5 mm 5 mm 3.96 mm 1.6 mm MDB845 Dimensions in mm. Fig.3 6 cm2 collector mounting pad. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 25 V; IE = 0 − − 100 nA VCB = 25 V; IE = 0; Tj = 150 °C − − 10 μA − − 100 nA VCE = 10 V; IC = 5 mA 50 − − VCE = 1 V; IC = 500 mA 85 − 375 VCE = 1 V; IC = 1 A 60 − − 160 − 375 IEBO emitter-base cut-off current VEB = 5 V; IC = 0 hFE DC current gain BCP68 BCP68-25 VCE = 1 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA − − 500 mV VBE base-emitter voltage VCE = 10 V; IC = 5 mA − − 700 mV VCE = 1 V; IC = 1 A − − 1 V Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − 22 − pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 − MHz 2003 Nov 25 6 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 MDB848 2.4 IC MDB849 1000 handbook, halfpage handbook, halfpage (A) 2.0 VBE (mV) (1) (2) 800 (3) 1.6 (4) 600 (5) (6) 1.2 (7) 400 (8) 0.8 (9) 200 0.4 (10) 0 0 1 2 3 4 0 10−1 5 VCE (V) 1 10 102 103 104 IC (mA) Tamb = 25 °C. (1) IB = 10 mA. (2) IB = 9 mA. (3) IB = 8 mA. (4) IB = 7 mA. (5) IB = 6 mA. Fig.4 (6) IB = 5 mA. (7) IB = 4 mA. (8) IB = 3 mA. (9) IB = 2 mA. (10) IB = 1 mA. VBE/VCE = 1 V. Collector current as a function of collector-emitter voltage; typical values. 2003 Nov 25 Fig.5 7 Base-emitter voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 MDB850 103 handbook, halfpage MDB851 103 handbook, halfpage hFE VCEsat (mV) 102 10 102 10−1 1 10 102 1 10−1 103 104 IC (mA) hFE/VCE = 1 V. IC/IB = 10. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. 2003 Nov 25 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 mdb847 102 (1) (2) (3) Rth(j-a) (K/W) (4) (5) 10 (6) (7) (8) (9) 1 δ= P (10) tp T t tp T 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) (1) δ = 1.0. (2) δ = 0.75. Fig.8 (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector mounting pad. 2003 Nov 25 9 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 Nov 25 REFERENCES IEC JEDEC EIAJ SC-73 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Nov 25 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp12 Date of release: 2003 Nov 25 Document order number: 9397 750 12041