BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp (MHz) (W) (W) D IMD3 IMDshldr PAR (dBc) (dB) 33 - - - 31[1] 8.2 [2] (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.1 858 200 95 - 21 21 47 33 RF performance in a common source 470 MHz to 860 MHz broadband test circuit DVB-T (8k OFDM) 858 95 - 20 32 - 32 [1] 8.0 [2] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band BLF879P NXP Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF879P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF879P Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 104 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] BLF879P Product data sheet Conditions Typ thermal resistance from junction to case Tcase = 80 C; PL(AV) = 95 W [1] Unit 0.15 K/W Rth(j-c) is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA [1] [1] Min Typ Max Unit 104 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 42 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 38 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.5 A [1] - 120 - m Ciss input capacitance VGS = 0 V; VDS = 42 V; f = 1 MHz [2] - 210 - pF Coss output capacitance VGS = 0 V; VDS = 42 V; f = 1 MHz - 72 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 42 V; f = 1 MHz - 1.5 - pF [1] ID is the drain current. [2] Capacitance values without internal matching. Table 7. RF characteristics RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class-AB BLF879P Product data sheet VDS drain-source voltage IDq quiescent drain current - 42 - V - 1.3 - A PL(AV) average output power f1 = 860 MHz; f2 = 860.1 MHz 200 - - W Gp power gain f1 = 860 MHz; f2 = 860.1 MHz 20 21 - dB D drain efficiency f1 = 860 MHz; f2 = 860.1 MHz 43 47 - % IMD3 third-order intermodulation distortion f1 = 860 MHz; f2 = 860.1 MHz - 33 29 dBc [1] All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor Table 7. RF characteristics …continued RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit DVB-T (8k OFDM), class-AB VDS drain-source voltage IDq quiescent drain current PL(AV) average output power Gp power gain D drain efficiency f = 858 MHz IMDshldr intermodulation distortion shoulder f = 858 MHz [2] f = 858 MHz [3] PAR - 42 - V - 1.3 - A f = 858 MHz 95 - - W f = 858 MHz 20 21 - dB 30 33 - % - 31 28 dBc - 8.2 - dB [1] peak-to-average ratio [1] Idq for total device [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. aaa-000339 400 Coss (pF) 300 200 100 0 0 20 40 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF879P is capable of withstanding a load mismatch corresponding to VSWR = 40 : 1 through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated power. BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 7. Application information 7.1 Broadband RF figures 7.1.1 DVB-T aaa-000340 24 Gp (dB) lMDshldr (dBc) Gp 20 aaa-000341 9.5 -10 PAR (dB) ηD (%) 40 8.5 -20 50 PAR lMDshldr 16 12 8 400 500 600 700 -30 7.5 -40 6.5 PL(AV =95 W; VDS = 42 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 2. DVB-T power gain and intermodulation distortion shoulder as function of frequency; typical values BLF879P Product data sheet 20 5.5 400 -50 800 900 f (MHz) 30 ηD 500 600 700 10 800 900 f (MHz) PL(AV =95 W; VDS = 42 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. Fig 3. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 7.2 Impedance information drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 4. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(AV) = 95 W (DVB-T). f BLF879P Product data sheet Zi ZL MHz 300 0.617 j1.715 4.164 + j0.608 325 0.635 j1.355 4.101 + j0.636 350 0.655 j1.026 4.036 + j0.661 375 0.677 j0.721 3.968 + j0.681 400 0.702 j0.435 3.898 + j0.696 425 0.731 j0.164 3.826 + j0.707 450 0.762 + j0.096 3.753 + j0.713 475 0.798 + j0.347 3.679 + j0.715 500 0.839 + j0.592 3.604 + j0.713 525 0.884 + j0.833 3.528 + j0.706 550 0.936 + j1.072 3.453 + j0.695 575 0.995 + j1.310 3.377 + j0.680 600 1.063 + j1.549 3.302 + j0.661 625 1.141 + j1.791 3.227 + j0.638 650 1.230 + j2.037 3.153 + j0.612 675 1.334 + j2.289 3.079+ j0.582 700 1.456 + j2.548 3.007 + j0.549 725 1.599 + j2.814 2.936 + j0.513 750 1.768 + j3.090 2.866 + j0.474 775 1.971 + j3.376 2.797 + j0.432 800 2.214 + j3.671 2.729 + j0.387 825 2.510 + j3.975 2.663 + j0.340 850 2.873 + j4.282 2.599 + j0.291 875 3.320 + j4.584 2.535 + j0.240 900 3.875 + j4.865 2.474+ j0.186 925 4.562 + j5.095 2.414 + j0.131 950 5.409 + j5.223 2.355 + j0.074 975 6.426 + j5.166 2.298 + j0.015 1000 7.587 + j4.807 2.243 j0.045 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 7.3 Reliability 001aam586 107 Years 106 (1) (2) (3) (4) (5) (6) 105 104 103 (7) (8) (9) (10) (11) 102 10 1 0 2 4 6 8 10 12 14 16 18 20 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 5. BLF879P Product data sheet BLF879P electromigration (IDS(DC), total device) All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 6, Figure 7 and Figure 8. Component Description Value B1, B2 semi rigid coax 25 ; 49.5 mm Remarks UT-090C-25 (EZ 90-25) C1 multilayer ceramic chip capacitor 12 pF [1] C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF [1] C7 multilayer ceramic chip capacitor 6.8 pF [2] C8 multilayer ceramic chip capacitor 2.7 pF [2] C9 multilayer ceramic chip capacitor 2.2 pF [2] C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3] C11, C12 multilayer ceramic chip capacitor 10 pF [2] C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V C17, C18, C23, C24 multilayer ceramic chip capacitor 100 pF C19, C20 multilayer ceramic chip capacitor 10 F, 50 V C21, C22 electrolytic capacitor 470 F; 63 V C30 multilayer ceramic chip capacitor 10 pF [4] C31 multilayer ceramic chip capacitor 9.1 pF [4] C32 multilayer ceramic chip capacitor 3.9 pF [4] C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4] C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V L1 microstrip - [5] (W L) 15 mm 13 mm - [5] (W L) 5 mm 26 mm - [5] (W L) 2 mm 49.5 mm (W L) 1.7 mm 3.5 mm L2 microstrip L3, L32 microstrip Kemet C1210X475K5RAC-TU or capacitor of same quality. [2] TDK C570X7R1H106KT000N or capacitor of same quality. TDK C4532X7R1E475MT020U or capacitor of same quality. L4 microstrip - [5] L5 microstrip - [5] (W L) 2 mm 9.5 mm - [5] (W L) 5 mm 13 mm - [5] (W L) 2 mm 11 mm [5] (W L) 2 mm 3 mm L30 microstrip L31 microstrip L33 microstrip - R1, R2 wire resistor 10 R3, R4 SMD resistor 5.6 R5, R6 wire resistor 100 R7, R8 potentiometer 10 k 0805 [1] American technical ceramics type 800R or capacitor of same quality. [2] American technical ceramics type 800B or capacitor of same quality. [3] American technical ceramics type 180R or capacitor of same quality. [4] American technical ceramics type 100A or capacitor of same quality. [5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF879P Product data sheet +VG1(test) R7 C19 R1 C17 R5 +VD1(test) C36 L5 R3 C34 L32 50 Ω C33 C21 C11 L30 C1 C32 L33 C13 C5 C3 L2 C8 L4 B2 C10 50 Ω B1 C31 Rev. 1 — 23 August 2011 All information provided in this document is subject to legal disclaimers. R4 C15 L3 L1 L31 C30 C2 C4 C35 C6 C7 C9 C12 C37 C14 C16 C22 R6 C23 C18 R2 C24 +VD2(test) C20 R8 +VG2(test) aaa-000342 See Table 9 for a list of components. Fig 6. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages BLF879P UHF power LDMOS transistor 9 of 15 © NXP B.V. 2011. All rights reserved. BLF879P NXP Semiconductors UHF power LDMOS transistor L3 L32 L5 L30 L1 50 mm L2 L31 L33 L4 L31 L2 L1 L30 L5 L32 L3 105 mm 001aam588 See Table 9 for a list of components. Fig 7. Printed-Circuit Board (PCB) for class-AB common source amplifier 49.6 mm 44 mm +VG1(test) +VD1(test) R7 C36 + R1 C17 R5 C19 C23 C21 C11 R3 C34 50 Ω C33 C15 C10 C1 C30 C32 C3 C7 C5 C9 C13 50 Ω C31 C35 C2 C4 C6 4 mm R4 C14 C8 C12 C16 C22 C37 R6 R8 C18 C20 R2 C24 + +VG2(test) 6.3 mm +VD2(test) 24.3 mm 27 mm 36.8 mm aaa-000343 See Table 9 for a list of components. Fig 8. Component layout for class-AB common source amplifier BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 9. EUROPEAN PROJECTION Package outline SOT539A BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function DVB-T Digital Video Broadcast - Terrestrial LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF879P v.1 20110823 Product data sheet - - BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 13.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 13.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF879P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 BLF879P NXP Semiconductors UHF power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.2 7.3 8 9 10 11 12 13 13.1 13.2 13.3 13.4 13.5 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Broadband RF figures . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Impedance information . . . . . . . . . . . . . . . . . . . 6 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 August 2011 Document identifier: BLF879P