PHILIPS LLE18010X

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D159
LLE18010X
NPN microwave power transistor
Product specification
Supersedes data of December 1994
1999 Apr 22
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
LLE18010X
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL1
(W)
Gpo
(dB)
Zi; ZL
(Ω)
Class AB (CW)
1.85
24
10
≥1
≥8.5
see Figs
6 and 7
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications up to
2 GHz.
handbook, 4 columns
1
c
b
3
DESCRIPTION
e
2
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
Top view
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
250
mA
Ptot
total power dissipation
−
4.5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MLC290
6
handbook, halfpage
P tot
(W)
4
2
0
50
0
50
100
150
Tmb ( oC)
Fig.2 Power derating curve.
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
Tj = 100 °C
MAX.
UNIT
22
K/W
0.2
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
−
11
µA
V(BR)CER
collector-emitter breakdown voltage
IC = 1 mA; RBE = 220 Ω
30
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 1 mA
40
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.5 mA
3
−
V
hFE
DC current gain
IC = 125 mA; VCE = 5 V
15
150
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL1
(W)
Gpo
(dB)
ηC
(%)
Z i; Z L
(Ω)
Class AB
(CW)
1.85
24
10
≥1
typ. 1.5
≥8.5
typ. 10
typ. 40
see Figs 6 and 7
1.65
24
10
typ. 2
typ. 11
typ. 47
see Figs 6 and 7
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
30
handbook, full pagewidth
30
6.0
4.0
8.0
4.0
8.0
2.5
1.0
5.0
20.0
40
40
5.0 16.0
1.1
1.4
5.0
,
2.0
V BB
C3
C4
1.1
2.5
VCC
F1
input
L1
L2
C1
output
C2
MLC447
The test circuit is split into two independent halves, each being 30 x 40 mm in size.
Dimensions in mm.
Substrate: Teflon fibreglass.
Thickness: 0.4 mm.
Permittivity: εr = 2.55.
Fig.3 Prematching test circuit board.
1999 Apr 22
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
PREMATCHING TEST
CIRCUIT
handbook, full pagewidth
BIAS CIRCUIT
VCC
R1
C4
TR1
C3
R2
F1
P1
D1
R3
L2
C5
L1
DUT
D2
MLC727
Fig.4 Class AB bias circuit.
List of components (see Figs 3 and 4)
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
transistor, BDT91 or equivalent
C1, C2
DC blocking chip capacitor
100 pF
ATC 100A101kp
C3, C4
feedthrough bypass capacitor
1500 pF
Erie 1250-003
C5
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; note 1
D2
diode BY239 or equivalent; note 2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
linear potentiometer
4.7 kΩ
R1
resistor
100 Ω, 0.25 W
R2
resistor
10 kΩ, 0.25 W
R3
resistor
56 Ω, 0.25 W
F1
ferrite bead
Philips tube,
12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
Input and optimum load impedances
VCE = 24 V; ICQ = 50 mA (see Figs 6 and 7); typical values
at PL = PL1.
MLC449
1.6
handbook, halfpage
PL
(W)
1.2
0.8
0.4
0
0
0.05
0.1
0.15
0.2
0.25
P i (W)
VCE = 24 V; f = 1.85 GHz; ICQ = 10 mA.
Fig.5 Load power as a function of input power.
1999 Apr 22
7
f
(GHz)
Zi
(Ω)
ZL
(Ω)
1.50
4.7 + j12.0
8.2 + j21.7
1.60
5.0 + j13.0
7.3 + j20.5
1.70
5.5 + j14.0
6.5 + j19.0
1.80
6.0 + j15.2
6.2 + j17.5
1.90
6.7 + j16.5
5.9 + j16.0
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
1
handbook, full pagewidth
0.5
2
1.9 GHz
0.2
5
1.7 GHz
1.5 GHz
10
Zi
+j
0.2
0
0.5
2
5
∞
10
–j
10
5
0.2
2
0.5
MLC450
1
VCE = 24 V; Zo = 50 Ω; ICQ = 10 mA.
Fig.6 Input impedance as a function of frequency; typical values at PL = PL1.
1
handbook, full pagewidth
0.5
2
1.5 GHz
0.2
1.7 GHz
5
1.9 GHz
ZL
10
+j
0
0.2
0.5
2
5
∞
10
–j
10
5
0.2
2
0.5
1
MLC451
VCE = 24 V; Zo = 50 Ω; ICQ = 10 mA.
Fig.7 Optimum load impedance as a function of frequency; typical values at PL = PL1.
1999 Apr 22
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT437A
D
A
F
3
D1
U1
B
q
C
c
1
H
U2
E
E1
A
w1 M A M B M
p
2
w2 M C M
b
0
Q
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.98
4.32
1.66
1.40
0.13
0.08
6.48
6.22
6.48
6.22
6.48
6.22
6.48
6.22
1.65
1.40
17.02
16.00
3.43
3.18
2.29
2.03
14.22
19.02
18.77
6.48
6.22
0.25
0.51
0.196 0.065 0.005
0.170 0.055 0.003
0.255
0.245
0.255 0.255
0.245 0.245
0.255 0.065
0.245 0.055
0.67
0.63
0.135
0.125
0.90
0.80
0.560
0.749
0.739
0.255
0.010 0.020
0.245
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT437A
1999 Apr 22
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
NOTES
1999 Apr 22
11
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
125002/00/02/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05722