DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 base 3 emitter connected to flange • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. handbook, halfpage 1 c APPLICATIONS b • Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz. 3 e 2 Top view MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A wideband amplifier. MODE OF OPERATION Class-A (CW) f (GHz) VCE (V) IC (A) PL1 (W) Gpo (dB) Zi; ZL (Ω) 1.4 to 1.8 16 2 ≥9 ≥10 see Fig 7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 4 A Ptot total power dissipation − 45 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb ≥ 75 °C at 0.2 mm from flange; t ≤ 10 s MGL003 10 MGD970 50 handbook, halfpage handbook, Ptot (W) IC (A) 40 1 30 (1) 10−1 20 (2) 10 10−2 1 10 VCE (V) 0 102 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 220 Ω. Fig.2 DC SOAR. 1997 Feb 18 Fig.3 3 Power derating curve. Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C 2.2 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.2 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. VCB = 20 V; IE = 0 − 2 mA VCB = 40 V; IE = 0 − 20 mA ICER collector cut-off current VCE = 30 V; RBE = 220 Ω − 20 mA ICEO collector cut-off current VCE = 20 V; IB = 0 − 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 200 µA hFE DC current gain VCE = 3 V; IC = 2 A 15 − 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class-A wideband amplifier; note 1. MODE OF OPERATION Class-A (CW) f (GHz) VCE (V) IC (A) PL1 (W) Gpo (dB) Z i; Z L (Ω) 1.4 to 1.8 16 2 ≥9 typ. 10 ≥10 typ. 11 see Fig 7 Note 1. Amplifier consists of test circuit board without any additional tuning. 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R VBB handbook, full pagewidth VCC ferrite bead ,,,,,, ,,,,,, ,,,,,,,,,,,,, ,, ,,,,,,,,,,,, ,,,,,, 16 5 6 4 0.65 input 50 Ω 0.65 3 output 50 Ω 10 100 pF ATC 100 pF ATC 3 3 6 5 2.5 6 2 6 1.5 MGK059 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Wideband test circuit board for 1.4 to1.8 GHz, CW class A application. MGL010 15 MGD982 15 handbook, halfpage handbook, halfpage PL1 (W) Gpo (dB) 10 10 5 1.3 1.6 f (GHz) 5 1.3 1.9 VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C. Fig.5 1997 Feb 18 1.6 f (GHz) VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C. Load power as a function of frequency; typical values. Fig.6 5 Linear power gain as a function of frequency; typical values. 1.9 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R 1 handbook, full pagewidth 0.5 2 1.4 0.2 zi 0 0.2 0.5 1.7 −j 1.8 GHz 10 1.5 1.8 GHz +j 5 1 2 5 ∞ 10 1.6 1.4 10 ZL 5 0.2 2 0.5 1 MGL063 Zo = 10 Ω; VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C. Fig.7 Input and load impedances as functions of frequency; typical values. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R PACKAGE OUTLINE 24 max handbook, full pagewidth 0.5 Y 0.1 6.4 max 3.5 2.9 3 1.7 max seating plane Y 3.1 1 4 min 0.5 X X 10.5 max 3.4 3.2 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on nut: Max. 0.5 Nm. Recommended screw: M3. Fig.8 SOT443A. 1997 Feb 18 7 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 8 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R NOTES 1997 Feb 18 9 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R NOTES 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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