DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. DESCRIPTION 1 collector 2 emitter 3 base; connected to flange 1 olumns c APPLICATIONS b Common-base, class B power amplifiers up to 4.2 GHz. 3 DESCRIPTION 2 e MAM131 Top view NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Marking code: 2303X. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. MODE OF OPERATION CW f (GHz) VCC (V) PL (W) Gpo (dB) ηC (%) Zi (Ω) ZL (Ω) 2 24 ≥3 ≥8.75 ≥45 2.5 + j14 8 + j6 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Nov 13 2 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 − 40 V IC collector current (DC) − 0.5 A Ptot total power dissipation Tmb = 75 °C; f > 1 MHz − 7.6 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.3 mm from ceramic. MLC092 10 handbook, halfpage Ptot (W) 5 0 0 50 50 100 150 200 Tmb (oC) f > 1 MHz. Fig.2 1997 Nov 13 Power derating curve. 3 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 75 °C 12 K/W Rth mb-h thermal resistance from mounting base to heatsink Tj = 75 °C; note 1 0.7 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage 40 − − V V(BR)CES collector-emitter breakdown voltage IC = 10 mA; RBE = 0 40 − − V ICBO collector cut-off current VCE = 24 V; IE = 0 − − 20 µA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − − 0.4 µA Ccb collector-base capacitance IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz − 3 − pF Cce collector-emitter capacitance IE = IC = 0; VCB = 24 V; VEB = 1.5 V; f = 1 MHz − 0.6 − pF 1997 Nov 13 IC = 2 mA; IE = 0 4 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X APPLICATION INFORMATION Microwave performance in a common-base class B selective amplifier circuit; see note 1. MODE OF OPERATION f (GHz) VCC (V) PL (W) Gpo (dB) ηC (%) Class B (CW) 2 24 >3; typ. 4 >8.75; typ. 10 >45; typ. 50 Note 1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners. ,,,,,,, ,,,,,,, ,,,,,,,, , , , , ,, , , ,,,,,,, ,,,,,,,, ,, , , , ,,,,,,, ,,,,,,,, ,,,,,, , , ,,,,,,, 3.2 handbook, full pagewidth 2 2.5 3.5 0.4 3.5 15 3.2 7.8 0.5 2 3.6 input 3.6 8 3 3.2 100 pF ATC 1.5 5 12.7 12 7.3 3 3.2 6 4 5 30 30 MSA103 Dimensions in mm. Thickness: 0.8 mm. Permittivity: εr = 2.55. Substrate: circuits on a double copper clad printed-circuit board Teflon fibreglass dielectric. Fig.3 Prematching test circuit board. 1997 Nov 13 5 output Philips Semiconductors Product specification NPN microwave power transistor PTB23003X PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 U1 B q C w2 M C b1 c 1 H U2 E w1 M A B p A 2 w2 M C b 0 Q 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D E F H p Q q U1 U2 w1 w2 mm 4.25 3.27 2.16 1.90 1.15 0.88 0.16 0.07 5.85 5.58 5.31 5.00 1.66 1.39 15.75 14.73 3.18 2.92 3.48 2.92 14.22 20.45 20.19 5.21 4.95 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT440A 1997 Nov 13 EUROPEAN PROJECTION ISSUE DATE 97-05-23 6 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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