DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. LFE18500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) Class AB (CW) 1.85 24 0.2 ≥48 ≥7 ηC (%) Z i ; ZL (Ω) typ. 42 see Figs 7 and 8 PINNING - FO-231 PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.8 GHz and 1.9 GHz. 1 handbook, 4 columns c b 3 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. 2 MAM045 - 1 Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. December 1994 2 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 22 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 12 A Pi input power f = 1.85 GHz; VCE = 24 V; class AB − 20 W Ptot total power dissipation Tmb = 75 °C 120 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MLC430 160 handbook, halfpage P tot (W) 120 80 40 0 0 50 100 150 200 o T mb ( C) Fig.2 Power derating curve. December 1994 3 − Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink MAX. Tj = 100 °C UNIT 1 K/W 0.2 K/W CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 20 V − 6 mA V(BR)CER collector-emitter breakdown voltage IC = 30 mA; RBE = 56 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC = 30 mA 45 − V V(BR)EBO emitter-base breakdown voltage IE = 30 mA 3 − V hFE DC current gain IC = 1 A; VCE = 5 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 24 0.2 ≥48 typ. 53 ≥7 typ. 7.5 typ. 42 see Figs 7 and 8 December 1994 4 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X 30 handbook, full pagewidth 30 1.5 1.5 2.0 6.0 4.0 2.0 3.0 7.0 4.0 1.0 15.2 2.0 5.2 40 2.0 40 7.0 5.0 0.695 2.0 4.0 3.0 0.695 3.5 1.0 2.0 C5 V BB C6 F1 VCC C7 L2 L1 output input C1 C3 C2 C4 MLC434 The test circuit is split into two independent halves, each being 30 x 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Prematching test circuit board. December 1994 5 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X PREMATCHING TEST CIRCUIT handbook, full pagewidth BIAS CIRCUIT VCC R1 C6 TR1 C5 R2 F1 P1 D1 R3 L2 C7 L1 DUT D2 MEA600 Fig.4 Class AB bias circuit. List of components (see Figs 3 and 4) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION TR1 transistor, BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie 1250-003 C7 electrolytic capacitor 10 µF, 50 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 kΩ R1 resistor 100 Ω, 0.25 W R2 resistor 10 kΩ, 0.25 W R3 resistor 56 Ω, 0.25 W F1 ferrite bead Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. December 1994 6 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X MLC431 60 MLC726 20 handbook, halfpage handbook, halfpage d im (dBc) PL (W) I CQ = 100 mA 30 40 200 mA 40 I CQ = 400 mA 200 mA 100 mA 20 400 mA 50 0 60 0 4 8 12 P i (W) 16 0 10 20 30 40 Po (av) (W) VCE = 24 V; f1 = 1849.9 MHz; f2 = 1850.1 MHz. VCE = 24 V; f = 1850 MHz. Fig.6 Fig.5 Load power as a function of input power. Intermodulation distortion as a function of average output power. Input and optimum load impedances VCE = 24 V; ICQ = 0.2 A; Zo = 10 Ω; typical values at PL = PL1 (see Figs 7 and 8). December 1994 f (GHz) Zi (Ω) ZL (Ω) 1.80 5.0 + j4.9 2.0 − j2.0 1.85 5.5 + j2.0 1.8 − j1.2 1.90 3.7 + j0.6 1.6 − j1.6 7 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X 1 handbook, full pagewidth 0.5 2 1.8 GHz 0.2 5 Zi 10 1.85 GHz +j 0.2 0 2 0.5 5 ∞ 10 1.9 GHz –j 10 5 0.2 2 0.5 MLC432 1 VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A. Fig.7 Input impedance as a function of frequency; typical values at PL = PL1. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 –j ZL 0.5 2 5 ∞ 10 1.85 GHz 10 1.9 GHz 1.8 GHz 5 0.2 2 0.5 1 MLC433 VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A. Fig.8 Optimum load impedance as a function of frequency; typical values at PL = PL1. December 1994 8 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X PACKAGE OUTLINE 15.5 max 0.15 max 6 max 3.3 2.9 1.6 max 3 26 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 3 3 2.7 min 2 MSA376 10.15 20.3 Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Fig.9 FO-231. December 1994 10.3 10.0 9 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1994 10