PHILIPS 2N3553

DISCRETE SEMICONDUCTORS
DATA SHEET
2N3553
Silicon planar epitaxial
overlay transistor
Product specification
Supersedes data of October 1981
File under Discrete Semiconductors, SC08a
1995 Oct 27
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
APPLICATIONS
DESCRIPTION
• The 2N3553 is intended for use in VHF and UHF
transmitting applications.
The device is a silicon NPN overlay transistor in a TO-39
metal package with the collector connected to the case.
PINNING - TO-39/3
PIN
DESCRIPTION
1
emitter
2
base
3
1
2
handbook, halfpage
collector
MBB199
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCEX
collector-emitter voltage
IC ≤ 200 mA; VBE = −1.5 V
65
V
VCEO
collector-emitter voltage
open base; IC ≤ 200 mA
40
V
ICM
peak collector current
1.0
A
Ptot
total power dissipation
up to Tmb = 25 °C
7.0
W
Tj
junction temperature
200
°C
fT
transition frequency
IC = 125 mA; VCE = 28 V
500
−
RF performance
f
(MHz)
VCE
(V)
Po
(W)
Gp
(dB)
η
(%)
175
28
2.5
>10
>50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Oct 27
2
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCEX
collector-emitter voltage
IC ≤ 200 mA; VBE = −1.5 V
−
65
V
VCEO
collector-emitter voltage
open base; IC ≤ 200 mA
−
40
V
open collector
VEBO
emitter-base voltage
−
4
V
IC
collector current (DC)
−
0.35
A
ICM
peak collector current
−
1
A
Ptot
total power dissipation
−
7
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
VALUE
thermal resistance from junction to mounting base
MGC928
10
25
UNIT
K/W
MGC927
10
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
1
(2)
5
10-1
(1)
(3)
10-2
0
1
10
VCE (V)
102
0
100
Tmb (oC)
(1) All frequencies, including DC.
(2) f ≥ 1 MHz.
(3) Allowed during switching off, provided the transistor is cut-off
with VBB ≤ −1.5 V; RBE ≥ 33 Ω; IC ≤ 200 mA and the transient
energy ≤ 0.5 mW.
Fig.2 DC SOAR.
1995 Oct 27
Fig.3 Power derating curve.
3
200
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.25 mA
65
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC up to 200 mA;
note 1
40
−
−
V
V(BR)CEX
collector-emitter breakdown voltage
IC up to 200 mA; VBE = −1.5 V; 65
RB = 33 Ω; note 1
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.25 mA
4
−
−
V
VBE
base-emitter voltage
IC = 250 mA; VCE = 5 V
−
−
1.5
V
VCEsat
collector-emitter saturation voltage
IC = 250 mA; IB = 50 mA
−
−
1.0
V
ICEO
collector leakage current
open base; VCE = 30 V
−
−
0.1
mA
hFE
DC current gain
VCE = 5 V; IC = 125 mA
15
−
200
VCE = 5 V; IC = 250 mA
10
−
100
fT
transition frequency
IC = 125 mA; VCE = 28 V
−
500
−
MHz
Rhoie)
real part of input impedance
IC = 125 mA; VCE = 28 V;
f = 200 MHz
−
−
20
Ω
Cc
collector capacitance
VCB = 28 V; IE = ie = 0;
f = 1 MHz
−
−
10
pF
Note
1. Pulsed through an inductor of 25 mH; δ = 0.5; f = 50 Hz.
MGC935
60
MGC930
20
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
15
40
10
20
5
0
0
Fig.4
100
200
300
0
400
500
IC (mA)
DC current gain as a function of collector
current; typical values.
1995 Oct 27
Fig.5
4
0
20
40
VCB (V)
60
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
APPLICATION INFORMATION
RF performance at Tmb = 25 °C.
f
(MHz)
VCE
(V)
Po
(W)
Gp
(dB)
η
(%)
175
28
2.5
>10
>50
Ruggedness
The transistor is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases,
under the conditions: VCE = 28 V; f = 175 MHz; Tmb = 25 °C; Po = 2.5 W.
+VCC
handbook, full pagewidth
L3
C1
(1)
C2
output
50 Ω
DUT
L1
input
50 Ω
C5
C3
L4
C4
L2
MGC926
(1) The length of the external emitter wire is 1.6 mm.
Fig.6 Test circuit at 175 MHz.
1995 Oct 27
5
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C2, C3, C4
air trimmer capacitor
4 to 29 pF
C5
polyester capacitor
10 nF
L1
1 turn 1.0 mm copper wire
L2
Ferroxcube choke coil
L3
15 turns enamelled 0.7 mm
copper wire
int. diameter 4 mm;
closely wound
L4
3 turns enamelled 1.5 mm
copper wire
int. diameter 12 mm;
leads 2 × 20 mm;
closely wound
CATALOGUE No.
int. diameter 10 mm;
leads 2 × 10 mm
Z = 550 Ω ±20%;
f = 175 MHz
4312 020 36640
MGC937
600
MGC929
10
handbook, halfpage
handbook, halfpage(1)
fT
(MHz)
(2)
Po
(W)
(3)
(1)
(2)
(3)
400
(4)
5
200
0
100
200
300
(5)
0
400
100
0
IC (mA)
Tj = 25 °C.
VCE = 28 V; Tmb = 25 °C.
(1) VCE = 28 V.
(2) VCE = 14 V.
(3) VCE = 7 V.
(1) Pi = 0.5 W.
(2) Pi = 0.375 W.
(3) Pi = 0.25 W.
Fig.7
Fig.8
Transition frequency as a function of
collector current; typical values.
1995 Oct 27
6
200
300
f(MHz)
400
(4) Pi = 0.1 W.
(5) Pi = 0.05 W.
Output power as a function of frequency;
typical values.
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
PACKAGE OUTLINE
handbook, full pagewidth
0.86
max
45 o
1
0.51
max
2
8.5
max
1.0
max
3
5.08
6.6
max
9.4 max
Dimensions in mm.
Fig.9 TO-39.
1995 Oct 27
7
12.7 min
MSA241
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Oct 27
8