PHILIPS PTB23002U

DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23002U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Very high power gain
• Internal input prematching network
PTB23002U
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
narrowband amplifier.
• Diffused emitter ballasting resistors
improve ruggedness
MODE OF
OPERATION
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
• Interdigitated emitter-base
structure
Class C (CW)
2.3
28
>2
>9
>45
see Figs 5
and 6
• Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
• Multicell geometry improves power
sharing and reduces thermal
resistance.
PINNING - SOT440A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Common-base, class C power
amplifiers at frequencies up to
2.3 GHz.
1
handbook, 4 columns
c
b
DESCRIPTION
3
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
2
e
MAM131
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
40
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
0.25
A
Ptot
total power dissipation
−
5
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MGA243
MGA244
8
handbook, halfpage
3
handbook, halfpage
Ptot
(W)
PL
(W)
6
2
4
1
2
0
−50
0
0
50
100
150
250
200
Tmb (oC)
0
100
200
400
300
Pi (mW)
Ptot max = 5 W.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 19
Fig.3 Output power as a function of input power.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 75 °C
22
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.7
K/W
MAX.
UNIT
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
collector-base breakdown voltage
40
−
V
V(BR)CES
collector-emitter breakdown voltage IC = 1 mA; RBE = 0 Ω
40
−
V
ICBO
collector cut-off current
VCE = 30 V; IE = 0
−
15
µA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
1.5
µA
IC = 1 mA; IE = 0
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.4 and working in
CW class C mode.
MODE OF
OPERATION
Class C
(CW)
f
(GHz)
2.3
PL
(W)
VCC
(V)
28
Gp
(dB)
≥2;
typ. 2.3
ηC
(%)
≥9;
typ. 9.6
≥45;
typ. 50
VALUE
DIMENSIONS
Zi; ZL
(Ω)
see Figs 5 and 6
List of components (see Fig.4)
COMPONENT
DESCRIPTION
L1, L2
3 turns 0.5 mm diameter copper wire
C1
feedthrough bypass capacitor
C2
DC blocking capacitor
100 pF
C3
tuning capacitor
0.5 - 5 pF
1997 Feb 19
CATALOGUE NO.
int.dia. = 2 mm
Erie, ref.1250-003
4
Tekelec 5855
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
30 mm
handbook, full pagewidth
30 mm
1
10
5.25
10
4
5
5
2
1.7
5
17
13
5
40 mm
3.5
2.24
1.4
40 mm
4
2.24
5.5
5
3
MCD612
VCC
handbook, full pagewidth
C1
L2
input
L1
output
C2
C3
MCD613
Substrate: PTFE fibreglass.
Thickness: 0.8 mm.
Permittivity: εr = 2.54.
Fig.4 Prematching test circuit.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
1
handbook, full pagewidth
0.5
0.2
2
2.3 GHz
5
10
+j
0.2
0
0.5
1
2
5
∞
10
–j
10
5
0.2
2
0.5
1
MCD615
VCC = 28 V; Zo = 50 Ω; PL = 2.3 W.
Fig.5 Input impedance as a function of frequency.
1
handbook, full pagewidth
0.5
2
2.3 GHz
0.2
5
10
+j
0
0.2
0.5
1
2
5
∞
10
–j
10
5
0.2
2
0.5
1
MCD614
VCC = 28 V; Zo = 50 Ω; PL = 2.3 W.
Fig.6 Optimum load impedance as a function of frequency.
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
PACKAGE OUTLINE
0.1
handbook, full pagewidth
3.45
2.90
1.7 max
4.5
max
3
20.5 max
seating plane
0.25 M
1.0
1
4.5
min
O 0.25 M
3.2
2.9
5.1
3.4
(1)
2
2.0
7.1
14.2
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
(1) Flatness of this area ensures full thermal contact with bolt head.
Fig.7 SOT440A.
1997 Feb 19
7
MBC888
5.5
max
4.5
min
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
NOTES
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
NOTES
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
PTB23002U
NOTES
1997 Feb 19
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01721