DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life PTB23006U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) Class C (CW) 2 28 >5 >9 >40 see Figs 5 and 6 PINNING - SOT440A • Multicell geometry improves power sharing and reduces thermal resistance PIN 1 collector • Internal input prematching network. 2 emitter 3 base connected to flange DESCRIPTION APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz. 1 handbook, 4 columns c b DESCRIPTION 3 NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 2 e MAM131 Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage RBE = 0 − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current − 0.75 A Ptot total power dissipation − 11 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MLC461 12 handbook, halfpage P tot (W) 8 4 0 0 50 100 150 200 o T mb ( C) Fig.2 Power derating curve. 1997 Feb 19 3 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 75 °C 8.5 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.7 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. ICES collector cut-off current IE = 0; VCE = 30 V − 300 µA V(BR)CBO collector-base breakdown voltage IC = 3 mA; IE = 0 40 − V V(BR)CES collector-emitter breakdown voltage IC = 3 mA; RBE = 0 40 − V V(BR)EBO emitter-base breakdown voltage IC = 1.5 mA 3 − V hFE DC current gain IC = 450 mA; VCE = 3 V 15 150 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-base class C test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) class C (CW) 2 28 >5 typ. 5.8 >9 typ. 10.5 >40 typ. 45 see Figs 5 and 6 1997 Feb 19 4 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U 30 handbook, full pagewidth 30 1 10 5.25 10 4 5 5 2 1.7 5 17 13 5 40 3.5 2.24 1.4 40 4 2.24 5.5 5 3 MLC718 VCC handbook, full pagewidth C1 L2 input L1 output C2 C3 MLC719 Dimensions in mm. Substrate: PTFE fibreglass. Thickness: 0.8 mm. Permittivity: εr = 2.54. Fig.3 Prematching test circuit. 1997 Feb 19 5 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U List of components (see Fig.3) COMPONENT DESCRIPTION VALUE C1 feedthrough bypass capacitor C2 DC blocking chip capacitor 100 pF C3 tuning capacitor 0.5 to 5 pF L1, L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm Erie1250-003 MGA244 3 handbook, halfpage PL (W) 2 1 0 0 100 200 400 300 Pi (mW) Fig.4 Load power as a function of input power. 1997 Feb 19 ORDERING INFORMATION 6 Tekelec 5855 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U 1 handbook, full pagewidth 0.5 0.2 2 2.3 GHz 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD615 VCC = 28 V; Zo = 50 Ω; PL = 2.3 W. Fig.5 Input impedance as a function of frequency. 1 handbook, full pagewidth 0.5 2 2.3 GHz 0.2 5 10 +j 0 0.2 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD614 VCC = 28 V; Zo = 50 Ω; PL = 2.3 W. Fig.6 Optimum load impedance as a function of frequency. 1997 Feb 19 7 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U PACKAGE OUTLINE 0.1 handbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on nut: max. 0.4 Nm. Recommended screw: M2.5. (1) Flatness of this area ensures full thermal contact with bolt head. Fig.7 SOT440A. 1997 Feb 19 8 MBC888 5.5 max 4.5 min Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 9 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U NOTES 1997 Feb 19 10 Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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