BCP51...BCP53 PNP Silicon AF Transistors For AF driver and output stages High collector current 4 Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223 BCP51-10 BCP 51-10 1 = B 2=C 3=E 4=C SOT223 BCP51-16 BCP 51-16 1 = B 2=C 3=E 4=C SOT223 BCP52 BCP 52 1=B 2=C 3=E 4=C SOT223 BCP52-10 BCP 52-10 1 = B 2=C 3=E 4=C SOT223 BCP52-16 BCP 52-16 1 = B 2=C 3=E 4=C SOT223 BCP53 BCP 53 1=B 2=C 3=E 4=C SOT223 BCP53-10 BCP 53-10 1 = B 2=C 3=E 4=C SOT223 BCP53-16 BCP 53-16 1 = B 2=C 3=E 4=C SOT223 1 VPS05163 Package Nov-29-2001 BCP51...BCP53 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-emitter voltage RBE 1k BCP51 Unit BCP52 BCP53 45 60 80 VCER 45 60 100 Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg 1 V A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP51...BCP53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP51 45 - - BCP52 60 - - BCP53 80 - - BCP51 45 - - BCP52 60 - - BCP53 100 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 µA hFE 25 - - BCP51...53 40 - 250 hFE-grp.10 63 100 160 hFE-grp.16 100 160 250 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 125 - Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V hFE DC current gain 1) hFE IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test: t ≤=300µs, D = 2% 3 Nov-29-2001 BCP51...BCP53 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V BCP 51...53 10 3 1.6 EHP00260 MHz W fT 5 P tot 1.2 1 0.8 10 2 0.6 5 0.4 0.2 0 0 20 40 60 80 100 120 °C 10 1 150 10 0 10 1 10 2 TS mA ΙC DC current gain hFE = f (IC) Collector cutoff current ICBO = f (T A) VCE = 2V VCB = 30V 10 3 h FE BCP 51...53 EHP00261 10 4 5 Ι CBO BCP 51...53 EHP00262 nA max 10 3 10 2 10 3 100 C 25 C -50 C 10 2 5 typ 10 1 10 1 5 10 0 0 10 10 0 10 1 10 2 10 3 mA 10 10 -1 4 ΙC 0 50 100 C 150 TA 4 Nov-29-2001 BCP51...BCP53 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 4 ΙC BCP 51...53 EHP00263 10 4 ΙC mA BCP 51...53 EHP00264 mA 10 3 10 3 5 100 C 25 C -50C 10 2 100 C 25 C -50 C 10 2 5 10 1 10 1 5 10 0 0 0.2 0.4 0.6 0.8 V 10 0 1.2 V BEsat 0 0.2 0.4 0.6 V 0.8 V CEsat Permissible pulse load Ptotmax / PtotDC = f (tp ) 5 BCP 51...53 Ptot max Ptot DC EHP00265 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Nov-29-2001