INFINEON BC818W

BC817W, BC818W
NPN Silicon AF Transistors
3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
2
Complementary types: BC807W, BC808W (PNP)
1
Pin Configuration
VSO05561
Type
Marking
Package
BC817-16W
6As
1=B
2=E
3=C
SOT323
BC817-25W
6Bs
1=B
2=E
3=C
SOT323
BC817-40W
6Cs
1=B
2=E
3=C
SOT323
BC818-16W
6Es
1=B
2=E
3=C
SOT323
BC818-25W
6Fs
1=B
2=E
3=C
SOT323
BC818-40W
6Gs
1=B
2=E
3=C
SOT323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Unit
BC817W
BC818W
VCEO
45
25
Collector-base voltage
VCBO
50
30
Emitter-base voltage
VEBO
5
5
DC collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
500
1
V
mA
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC817W, BC818W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC817W
45
-
-
BC818W
25
-
-
BC817W
50
-
-
BC818W
30
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
50
µA
IEBO
-
-
100
nA
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 mA, VCE = 1 V
h FE-grp.16
100
160
250
h FE-grp.25
160
250
400
h FE-grp.40
250
350
630
hFE-grp.16
60
-
-
hFE-grp.25
100
-
-
hFE-grp.40
170
-
-
VCEsat
-
-
0.7
VBEsat
-
-
1.2
DC current gain 1)
IC = 300 mA, VCE = 1 V
-
hFE
hFE
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
BC817W, BC818W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
-
170
-
MHz
Ccb
-
6
-
pF
Ceb
-
60
-
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
3
Nov-29-2001
BC817W, BC818W
Total power dissipation Ptot = f (TS )
Permissible Pulse Load RthJS = f (tp)
10 3
300
K/W
mW
RthJS
P tot
10 2
200
10 1
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
100
10 0
50
0
0
20
40
60
80
120 °C
100
10 -1 -6
10
150
10
-5
10
-4
10
-3
10
-2
s
TS
10
tp
Permissible Pulse Load
Collector cutoff current ICBO = f (T A)
Ptotmax / PtotDC = f (tp)
VCBO = 25V
10 3
Ptotmax / PtotDC
0
10 5
Ι CBO
-
BC 817/818
EHP00221
nA
10 4
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
max
10 3
typ
10 2
10 1
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0
0
tp
0
50
100
˚C
150
TA
4
Nov-29-2001
BC817W, BC818W
DC current gain hFE = f (IC )
Transition frequency fT = f (IC)
VCE = 1V
VCE = 5V
10 3
BC 817/818
h FE 5
EHP00224
10 3
fT
100 ˚C
25 ˚C
BC 817/818
EHP00218
MHz
5
-50 ˚C
10
2
5
10 2
5
10 1
5
10 0
10 -1
10
0
10
1
10
2
mA 10
10 1
10 0
3
10 1
10 2
mA
ΙC
ΙC
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
IC = f (VCEsat), h FE = 10
10 3
ΙC
BC 817/818
EHP00222
mA
10 2
mA
5
10 1
10 1
5
5
10 0
10 0
5
5
0
1.0
150 ˚C
25 ˚C
-50 ˚C
10 2
5
10 -1
EHP00215
10 3
ΙC
150 ˚C
25 ˚C
-50 ˚C
2.0
3.0
V
10 3
10 -1
4.0
V BEsat
0
0.2
0.4
0.6
V
0.8
V CEsat
5
Nov-29-2001