BC807W, BC808W PNP Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 2 Complementary types: BC817W, BC818W (NPN) 1 Pin Configuration VSO05561 Type Marking Package BC807-16W 5As 1=B 2=E 3=C SOT323 BC807-25W 5Bs 1=B 2=E 3=C SOT323 BC807-40W 5Cs 1=B 2=E 3=C SOT323 BC808-16W 5Es 1=B 2=E 3=C SOT323 BC808-25W 5Fs 1=B 2=E 3=C SOT323 BC808-40W 5Gs 1=B 2=E 3=C SOT323 Maximum Ratings Parameter Symbol BC 807W BC 808W Collector-emitter voltage VCEO 45 25 Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 500 1 Unit V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 80 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W 30 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA V(BR)CBO Collector-base breakdown voltage IC = 10 µA, IE = 0 V V(BR)CEO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V - hFE h FE-grp. 16 100 160 250 h FE-grp. 25 160 250 400 h FE-grp. 40 250 350 630 40 - - VCEsat - - 0.7 VBEsat - - 1.2 DC current gain 1) hFE IC = 500 mA, VCE = 1 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT - 200 - MHz Ccb - 10 - pF Ceb - 60 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC807W, BC808W Permissible Pulse Load RthJS = f (tp) Total power dissipation Ptot = f (TS ) 10 3 300 K/W mW RthJS P tot 10 2 200 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 10 0 50 0 0 20 40 60 80 120 °C 100 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s TS 10 tp Permissible Pulse Load Collector cutoff current ICBO = f(TA) Ptotmax / PtotDC = f (tp) VCB = 25V 10 3 Ptotmax / PtotDC 0 EHP00213 10 5 Ι CBO - nA 10 4 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 max 10 3 typ 10 2 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 tp 0 50 100 ˚C 150 TA 4 Nov-29-2001 BC807W, BC808W DC current gain hFE = f(IC) Transition frequency fT = f (IC) VCE = 1V VCE = 5V h FE 5 EHP00210 10 3 EHP00216 10 3 fT 100 ˚C 25 ˚C MHz 5 -50 ˚C 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 10 1 10 0 3 10 1 10 2 mA ΙC ΙC Base-emitter saturation voltage Collector-emitter saturation voltage IC = f(VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 EHP00214 10 3 ΙC mA mA 5 10 1 10 1 5 5 10 0 10 0 5 5 0 1.0 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 -1 EHP00215 10 3 ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 2.0 3.0 V 10 3 10 -1 4.0 0 0.2 0.4 0.6 V 0.8 V CEsat V BEsat 5 Nov-29-2001