INFINEON Q67000-S221

SIPMOS Small-Signal Transistor
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BSS 139
VDS
250 V
ID
0.04 A
RDS(on) 100 Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in VGS(th)
Type
Ordering
Code
Tape and Reel
Information
Pin Configuration Marking
BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
1
2
3
G
S
D
STs
Package
SOT-23
BSS 139 Q67000-S221 E7941: 3000 pcs/reel;
VGS(th) selected in groups:
(see page 491)
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
250
V
Thermal resistance, chip-ambient
(without heat sink)
chip-substrate – reverse side 1)
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
TA = 25 ˚C
250
± 14
± 20
0.04
A
0.12
0.36
W
– 55 … + 150
˚C
RthJA
≤ 350
K/W
RthJSR
≤ 285
DIN humidity category, DIN 40 040
–
E
IEC climatic category, DIN IEC 68-1
–
55/150/56
Max. power dissipation,
Operating and storage temperature range
1)
–
For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94
BSS 139
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
250
–
–
− 1.8
− 1.4
− 0.7
–
–
–
–
100
200
–
10
100
–
75
100
0.05
0.07
–
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VDS = 3 V, ID = 1 mA
VGS(th)
Drain-source cutoff current
VDS = 250 V, VGS = − 3 V
Tj = 25 ˚C
Tj = 125 ˚C
IDSS
Gate-source leakage current
VGS = 20 V, VDS = 0
IGSS
Drain-source on-resistance
VGS = 0 V, ID = 0.014 A
RDS(on)
V
nA
µA
nA
Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on)max, ID = 0.04 A
gfs
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss
Turn-on time ton, (ton = td(on) + tr)
VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,
ID = 0.15 A
Turn-off time toff, (toff = td(off) + tf)
VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,
ID = 0.15 A
Semiconductor Group
S
pF
–
85
120
–
6
10
–
2
3
td(on)
–
4
6
tr
–
10
15
td(off)
–
10
13
tf
–
15
20
2
ns
BSS 139
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Continuous reverse drain current
TA = 25 ˚C
IS
Pulsed reverse drain current
ISM
A
TA = 25 ˚C
VGS(th) Grouping
0.04
–
–
0.12
–
0.7
1.2
V
Symbol
∆VGS(th)
Range of VGS(th)
1)
Limit Values
min.
max.
–
0.15
Unit
Test Condition
V
–
VGS(th)
– 1.535
– 1.635
– 1.735
– 1.835
– 1.935
– 2.035
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Package Outline
SOT-23
Dimensions in mm
Semiconductor Group
–
VSD
Diode forward on-voltage
IF = 0.08 A, VGS = 0
Threshold voltage selected in groups:
F
G
A
B
C
D
–
3
– 1.385
– 1.485
– 1.585
– 1.685
– 1.785
– 1.885
V
V
V
V
V
V
VDS1 = 0.2 V;
VDS2 = 3 V;
ID = 10 µA
BSS 139
Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation Ptot = f (TA)
Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS(on) = f (ID)
parameter: VGS
Semiconductor Group
4
BSS 139
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5
BSS 139
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = 3 V, ID = 1 mA, (spread)
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 3 V
Drain-source breakdown voltage
V(BR) DSS = b × V(BR)DSS (25 ˚C)
Semiconductor Group
6