SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 139 VDS 250 V ID 0.04 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel; 1 2 3 G S D STs Package SOT-23 BSS 139 Q67000-S221 E7941: 3000 pcs/reel; VGS(th) selected in groups: (see page 491) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg 250 V Thermal resistance, chip-ambient (without heat sink) chip-substrate – reverse side 1) Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 25 ˚C Pulsed drain current, TA = 25 ˚C TA = 25 ˚C 250 ± 14 ± 20 0.04 A 0.12 0.36 W – 55 … + 150 ˚C RthJA ≤ 350 K/W RthJSR ≤ 285 DIN humidity category, DIN 40 040 – E IEC climatic category, DIN IEC 68-1 – 55/150/56 Max. power dissipation, Operating and storage temperature range 1) – For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BSS 139 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 250 – – − 1.8 − 1.4 − 0.7 – – – – 100 200 – 10 100 – 75 100 0.05 0.07 – Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA V(BR)DSS Gate threshold voltage VDS = 3 V, ID = 1 mA VGS(th) Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-resistance VGS = 0 V, ID = 0.014 A RDS(on) V nA µA nA Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.04 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.15 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.15 A Semiconductor Group S pF – 85 120 – 6 10 – 2 3 td(on) – 4 6 tr – 10 15 td(off) – 10 13 tf – 15 20 2 ns BSS 139 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS Pulsed reverse drain current ISM A TA = 25 ˚C VGS(th) Grouping 0.04 – – 0.12 – 0.7 1.2 V Symbol ∆VGS(th) Range of VGS(th) 1) Limit Values min. max. – 0.15 Unit Test Condition V – VGS(th) – 1.535 – 1.635 – 1.735 – 1.835 – 1.935 – 2.035 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Package Outline SOT-23 Dimensions in mm Semiconductor Group – VSD Diode forward on-voltage IF = 0.08 A, VGS = 0 Threshold voltage selected in groups: F G A B C D – 3 – 1.385 – 1.485 – 1.585 – 1.685 – 1.785 – 1.885 V V V V V V VDS1 = 0.2 V; VDS2 = 3 V; ID = 10 µA BSS 139 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSS 139 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.014 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSS 139 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) Semiconductor Group 6