SIMOPAC® Module BSM 181 F VDS = 800 V ID = 34 A R DS(on) = 0.32 Ω ● ● ● ● ● ● ● Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 181 F C67076-A1052-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 800 V Drain-gate voltage, RGS = 20 kΩ VDGR 800 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 34 Pulsed drain current, TC = 25 ˚C ID puls 136 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case Rth JC ≤ 0.18 Insulation test voltage2), t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 1) 2) A K/W – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 64 03.96 BSM 181 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 21 A RDS(on) V 800 – – 2.1 3.0 4.0 µA – – 20 300 250 1000 – 10 100 nA Ω – 0.25 0.32 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 21 A gfs 15 35 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 22 30 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 1 1.5 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 0.48 0.8 Turn-on time ton (ton = td (on) + tr) VCC = 400 V, VGS = 10 V ID = 21 A, RGS = 3.3 Ω td (on) – 60 – tr – 90 – Turn-off time toff (toff = td (off) + tf) VCC = 400 V, VGS = 10 V ID = 21 A, RGS = 3.3 Ω td (off) – 350 – tf – 70 – Semiconductor Group 65 ns BSM 181 F Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Fast-recovery reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 68 A , VGS = 0 VSD Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V trr Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V Tj = 25 ˚C Tj = 150 ˚C Qrr Semiconductor Group A – – 34 – – 136 – 1.6 2 300 – V ns µC – – 66 3 16 – – BSM 181 F Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C, Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 µs , VDS = 25 V Semiconductor Group 67 BSM 181 F Continuous drain current ID = f (TC) parameter: VGS ≥ 10 V, T j = 150 ˚C Drain-source breakdown voltage V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 34 A; VGS = 10 V, (spread) Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, I D = 1 mA Semiconductor Group 68 BSM 181 F Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz (spread) Typ. reverse recovery charge Qrr = f (Tj) parameter: di/dt = 100 A/ µs, IF = 34 A VR = 100 V Forward characteristics of fast-recovery reverse diode IF = f (VSD) parameter: Tj, tp = 80 µs (spread) Semiconductor Group 69 BSM 181 F Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 51 A Semiconductor Group 70