BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Marking RK 1=B Pin Configuration 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 10 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 4 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 100°C 1) Thermal Resistance Junction - soldering point 2) RthJS tbd K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 10 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 0.1 µA hFE 100 140 200 - DC Characteristics V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V 2 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 7 9 - GHz Ccb - 0.25 - pF Cce - 0.15 - Ceb - 0.7 - AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance VCB = 10 V, f = 1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1MHz F Noise figure dB IC = 5 mA, VCE = 6 V, ZS = ZSopt , - 1 2.5 - 1.5 - Gms - 21.5 - Gma - 15.5 - 14 17 - - 12 - f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz 1G ms = |S21 / S12 | 2G 2 1/2 ma = |S21 / S12 | (k-(k -1) ) 3 Aug-09-2001