BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 482 SOT-363 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C data below is of a single transistor Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot TS ≤ 81 °C Values Unit V mA mW 250 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 275 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 10 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-16-1996 BFS 482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.3 0.45 - 0.12 - - 0.65 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 MHz - 1.9 - - 19.5 - - 13 - f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - Power gain 1) Gms IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 10 mA, VCE = 8 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFS 482 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 \ 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-16-1996 BFS 482 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.50 8.0 8V pF GHz Ccb 0.40 fT 6.0 0.35 5V 5.0 0.30 0.25 3V 4.0 0.20 2V 3.0 0.15 1V 0.7V 2.0 0.10 1.0 0.05 0.00 0 0.0 4 8 12 16 V 24 0 5 10 15 20 25 30 35 VR Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 14 dB dB mA IC 45 8V G 18 5V G 10V 5V 10 3V 8 3V 16 2V 14 2V 6 12 1V 4 10 1V 0.7V 2 8 0.7V 6 0 0 5 10 Semiconductor Group 15 20 25 30 35 mA IC 45 0 5 5 10 15 20 25 30 35 mA IC 45 Dec-16-1996 BFS 482 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 22 28 IC=10mA 8V dBm dB 0.9GHz G IP3 18 24 5V 22 16 20 0.9GHz 3V 18 14 16 1.8GHz 12 2V 14 12 1.8GHz 10 10 1V 8 8 6 6 0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 20 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 mA IC 28 28 IC=10mA dB dB IC=10mA 24 G S21 24 22 20 18 20 16 16 14 12 12 10 8V 8 1V 0.7V 6 8V 4 4 1V 0 0.0 2 0 0.0 8 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 3.5 6 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-16-1996