BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 35AP SOT-23 GEs Q62702-F938 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot TS ≤ 48 °C Values Unit V mA mW 280 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 365 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 10 nA - - 100 IEBO µA - - 100 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2.5 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 40 2 100 200 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 0.38 0.6 - 0.2 - - 0.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz - 1.8 - f = 1.8 GHz - 2.9 - f = 900 MHz - 15 - f = 1.8 GHz - 9.5 - f = 900 MHz - 12.5 - f = 1.8 GHz - 7 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996