INFINEON Q62702

BFG 196
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
• Power amplifier for DECT and PCN systems
• fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 196
SOT-223
BFG196 Q62702-F1292
1=E
2=B
3=E
4=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
100
Base current
IB
12
Total power dissipation
Ptot
TS ≤ 90 °C
Values
Unit
V
mA
mW
800
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 75
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFG 196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
12
100
nA
-
-
100
IEBO
µA
-
-
1
hFE
IC = 50 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 1 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 20 V, VBE = 0
Collector-base cutoff current
V
50
2
100
200
Dec-13-1996
BFG 196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
5
pF
-
0.97
1.4
-
0.4
-
-
4
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
7.5
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 20 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2.5
-
f = 900 MHz
-
14
-
f = 1.8 GHz
-
8.5
-
f = 900 MHz
-
11.5
-
f = 1.8 GHz
-
6
-
Power gain
2)
Gma
IC = 50 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 50 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
BFG 196
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
900
mW
Ptot
700
600
TS
500
400
TA
300
200
100
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
RthJS
10 2
P totmax/PtotDC
-
K/W
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
4
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Dec-13-1996
BFG 196
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.8
9
pF
GHz
10V
Ccb
fT
1.4
7
1.2
6
1.0
5
0.8
4
0.6
3
5V
3V
2V
1V
0.7V
0.4
2
0.2
1
0.0
0
0
4
8
12
16
V
VR
22
0
20
40
60
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
15
mA
IC
120
10
10V
dB
G
80
5V
3V
13
dB
5V
3V
G
2V
8
12
2V
7
11
10
6
1V
9
5
1V
8
4
7
0.7V
3
6
0.7V
5
2
0
20
Semiconductor Group
40
60
80
mA
IC
120
5
0
20
40
60
80
mA
IC
120
Dec-13-1996
BFG 196
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
16
42
IC=50mA
dBm
dB
0.9GHz
12
0.9GHz
8V
38
G
IP 3
36
5V
34
32
10
30
1.8GHz
8
3V
28
26
1.8GHz
6
24
2V
22
4
20
2
18
0
16
14
0
0
2
4
6
8
V
12
1V
20
40
60
80
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
IC=50mA
IC=50mA
28
G
120
30
32
dB
mA
IC
dB
S21
26
24
20
22
20
15
18
16
10
14
12
5
10
10V
8
4
2
0.0
0
10V
1V
0.7V
6
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
-5
0.0
3.5
6
1V
0.7V
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Dec-13-1996