BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 196 SOT-223 BFG196 Q62702-F1292 1=E 2=B 3=E 4=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 100 Base current IB 12 Total power dissipation Ptot TS ≤ 90 °C Values Unit V mA mW 800 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 75 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 50 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-13-1996 BFG 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 5 pF - 0.97 1.4 - 0.4 - - 4 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 7.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.5 - f = 1.8 GHz - 2.5 - f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - f = 900 MHz - 11.5 - f = 1.8 GHz - 6 - Power gain 2) Gma IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 50 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 196 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 900 mW Ptot 700 600 TS 500 400 TA 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 RthJS 10 2 P totmax/PtotDC - K/W 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996 BFG 196 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.8 9 pF GHz 10V Ccb fT 1.4 7 1.2 6 1.0 5 0.8 4 0.6 3 5V 3V 2V 1V 0.7V 0.4 2 0.2 1 0.0 0 0 4 8 12 16 V VR 22 0 20 40 60 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 15 mA IC 120 10 10V dB G 80 5V 3V 13 dB 5V 3V G 2V 8 12 2V 7 11 10 6 1V 9 5 1V 8 4 7 0.7V 3 6 0.7V 5 2 0 20 Semiconductor Group 40 60 80 mA IC 120 5 0 20 40 60 80 mA IC 120 Dec-13-1996 BFG 196 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 16 42 IC=50mA dBm dB 0.9GHz 12 0.9GHz 8V 38 G IP 3 36 5V 34 32 10 30 1.8GHz 8 3V 28 26 1.8GHz 6 24 2V 22 4 20 2 18 0 16 14 0 0 2 4 6 8 V 12 1V 20 40 60 80 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter IC=50mA IC=50mA 28 G 120 30 32 dB mA IC dB S21 26 24 20 22 20 15 18 16 10 14 12 5 10 10V 8 4 2 0.0 0 10V 1V 0.7V 6 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f -5 0.0 3.5 6 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-13-1996