DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102. • Fast switching time • Integrated Schottky protection diode. 1 4 handbook, halfpage APPLICATIONS • High-speed switching for industrial applications. 4 2 PINNING 1 PIN DESCRIPTION 1 anode Schottky 2 base 3 emitter 4 collector, cathode Schottky 2 Top view 3 3 MAM236 Marking code: TM1101. Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor − VCBO collector-base voltage open emitter 60 V VCES collector-emitter voltage VBE = 0 − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 200 mA Schottky barrier diode VR continuous reverse voltage − 40 V IF forward current (DC) − 1 A IF(AV) average forward current Tj junction temperature − 1 A reverse current applied − 125 °C forward current applied − 150 °C up to Tamb = 25 °C − 1.2 W Combined device Ptot total power dissipation Tamb operating ambient temperature −55 +150 °C Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C 1996 May 09 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0; Tamb = −55 to +150 °C; note 1 60 − V V(BR)CES collector-emitter breakdown voltage open base; IC = 1 mA; VBE = 0; Tamb = −55 to +150 °C; note 1 40 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0; Tamb = −55 to +150 °C; note 1 6 − V ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 − 100 nA VCE = 20 V; VBE = 0; Tamb = −55 to +150 °C − 50 µA VEB = 6 V; IC = 0 − 50 nA VEB = 6 V; IC = 0; Tamb = −55 to +150 °C − 10 µA IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 3.2 mA − 300 mV IC = 10 mA; IB = 1 mA − 250 mV IC = 50 mA; IB = 3.2 mA − 350 mV IC = 10 mA; IB = 1 mA − 850 mV IC = 50 mA; IB = 5 mA − 950 mV − 1000 mV IEBO emitter-base cut-off current VCEsat collector-emitter saturation voltage VCEsat VBEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage note 1 Tamb = −55 to +150 °C; note 1 note 1 Tamb = −55 to +150 °C; note 1 IC = 10 mA; IB = 1 mA − 1100 mV Cob output capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Cib input capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz hFE DC current gain VCE = 1 V; note 1 IC = 0.1 mA 40 − IC = 1 mA 70 − IC = 10 mA 100 300 IC = 100 mA 30 − IC = 10 mA 60 500 IC = 100 mA 15 − IC = 50 mA; IB = 5 mA hFE DC current gain VCE = 1 V; Tamb = −55 to +150 °C; note 1 SWITCHING TIMES (see Figs 2 and 3) td delay time VCC = 5 V 1 5 ns tr rise time IC = 50 mA 16 31 ns ts storage time Vi = 0 to 5 V 110 310 ns tf fall time 70 100 ns 1996 May 09 3 Philips Semiconductors Product specification NPN transistor/Schottky-diode module SYMBOL PARAMETER PZTM1101 CONDITIONS MIN. MAX. UNIT Schottky barrier diode VF IR IR Cj forward voltage reverse current reverse current junction capacitance IF = 100 mA; note 1 − 330 mV IF = 100 mA; Tamb = −55 to +150 °C; note 1 − 400 mV IF = 1 A; note 1 − 500 mV IF = 1 A; Tamb = −55 to +150 °C; note 1 − 560 mV VR = 40 V; note 1 − 300 µA VR = 40 V; Tj = 125 °C; Tamb = −55 to +150 °C; note 1 − 35(2) mA VR = 10 V; note 1 − 40 µA VR = 10 V; Tj = 125 °C; Tamb = −55 to +150 °C; note 1 − 15(2) mA VR = 0 V; f = 1 MHz − 250 pF Notes 1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01. 2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with forward voltage applied. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient (combined device) note 1 Note 1. Refer to SOT223 standard mounting conditions. 1996 May 09 4 VALUE UNIT 100 K/W Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 GRAPHICAL DATA 5V handbook, halfpage VCC = 5 V DC handbook, halfpage INPUT 90 Ω (1%) Vi 0V 0V tp Vo (pin 4) 825 Ω (1%) 5V Vi Vo 10% DUT 7.5 kΩ (5%) 90% OUTPUT 5.23 Ω (1%) 90% 10% tf td MBH220 tr ton ts toff tr < 5 ns (10% to 90%); tp = 1 µs; δ = 0.02; Zi = 50 Ω. ton = td + tr; toff = ts + tf. Fig.2 Switching times test circuit. 1996 May 09 Fig.3 Input and output waveforms. 5 MBH221 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 1 2 10 max 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.4 SOT223. 1996 May 09 7.3 6.7 o o 1.80 max 0.2 M A 6 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 09 7