DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor Product specification 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor BLV33F PINNING - SOT119A FEATURES • Internally matched input for wideband operation and high power gain PIN SYMBOL • Diffused emitter ballasting resistors for an optimum temperature profile 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter • Gold metallization ensures excellent reliability. APPLICATIONS • Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. DESCRIPTION handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange. 1 2 3 4 5 6 c b e MAM269 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a common emitter push-pull test circuit. MODE OF OPERATION fvision (MHz) VCE (V) IC, IC(ZS) (A) CW, class-A 224.25 25 3.2 CW, class-AB 224.25 28 0.2 Th (°C) dim(1) (dB) Po sync (1) (W) 70 −55 >13 >13.5 25 −55 typ. 19 typ. 14.8 70 − typ. 85 typ. 10.5 GP (dB) sync compr.(2) sync in/sync out (%) 30/25 Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. 2. Television service (negative modulation, C.C.I.R. system). WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 10 2 Philips Semiconductors Product specification VHF linear power transistor BLV33F LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter voltage VBE = 0 − 65 V VCEO collector-emitter voltage open base − 33 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 12.5 A IC(AV) average collector current − 12.5 A ICM peak collector current f > 1 MHz − 20 A Ptot total power dissipation (DC) Tmb = 25 °C − 133 W Prf RF power dissipation f > 1 MHz; Tmb = 25 °C − 162 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb(dc) thermal resistance from junction to mounting base (DC dissipation) Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C 1.43 K/W Rth j-mb(rf) thermal resistance from junction to mounting base (RF dissipation) Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C 1.17 K/W Rth mb-h thermal resistance from mounting base to heatsink Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C 0.2 K/W MGG132 102 handbook, halfpage MGG133 200 handbook, halfpage Ptot (W) IC (A) 150 (2) (1) 10 (1) (3) (2) 100 1 1 10 VCE (V) 50 102 0 (1) Tmb = 25 °C. (2) Th = 70 °C. (3) Second breakdown limit (independent of temperature). Th (°C) (1) Continuous DC (including RF class-A) operation. (2) Continuous RF operation. Fig.2 DC SOAR. 1996 Oct 10 50 Fig.3 Power derating curves. 3 100 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG144 2.0 handbook, full pagewidth 20 Rth j-h Th (K/W) =1 °C 100 °C 80 °C 60 °C 40 1.8 °C 20 ° C 1.6 0 °C Tj = 200 °C 175 °C 1.4 150 °C 125 °C 100 °C 1.2 75 °C 1.0 50 0 100 Ptot (W) 150 Rth mb-h = 0.2 K/W. Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. Example Nominal class-A operation (without RF signal): VCE = 25 V; IC = 3.2 A; Th = 70 °C. Figure 4 shows: Rth j-h = max. 1.63 K/W Tj = max. 200 °C. Typical device: Rth j-h = typ.1.53 K/W Tj = typ. 192 °C. 1996 Oct 10 4 Philips Semiconductors Product specification VHF linear power transistor BLV33F CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − MAX. UNIT − V V(BR)CES collector-emitter breakdown voltage VBE = 0; IC = 25 mA 65 V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA 33 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 mA 4 − − V ICES collector cut-off current VBE = 0; VCE = 30 V − − 1 mA hFE DC current gain VCE = 25 V; IC = 3 A; note 1 15 50 100 VCEsat collector-emitter saturation voltage IC = 6 A; IB = 0.6 A; note 1 − 0.75 − V fT transition frequency VCB = 25 V; IE = −3 A; f = 100 MHz; note 2 − 680 − MHz VCB = 25 V; IE = −6 A; f = 100 MHz; note 2 − 750 − MHz − 155 − pF 88 − pF 3 − pF Cc collector capacitance VCB = 25 V; IE = ie = 0; f = 1 MHz Cre feedback capacitance IC = 50 mA; VCE = 25 V; f = 1 MHz − Ccf collector-flange capacitance − Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02. 2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01. 1996 Oct 10 5 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG129 MGG130 600 75 handbook, halfpage handbook, halfpage Cc (pF) hFE (1) 400 50 (2) 200 25 0 0 0 5 10 IC (A) 0 15 20 Tj = 25 °C. (1) VCE = 25 V. (2) VCE = 5 V. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 DC current gain as a function of collector current; typical values. MGG131 1000 Collector capacitance as a function of collector-base voltage; typical values. MGG118 10 handbook, halfpage 40 VCB (V) handbook, halfpage fT (MHz) 800 IC (A) (1) (2) 600 1 400 200 0 −0 −5 −10 IE (A) 10−1 0.5 −15 VCB = 25 V; f = 100 MHz; Tj = 25 °C. VCE = 25 V. (1) Th = 70 °C. (2) Th = 25 °C. Fig.7 Fig.8 Transition frequency as a function of emitter current; typical values. 1996 Oct 10 6 1 1.5 VBE (V) Collector current as a function of base-emitter voltage; typical values. 2 Philips Semiconductors Product specification VHF linear power transistor BLV33F APPLICATION INFORMATION RF performance in VHF class-A operation (linear power amplifier) MODE OF OPERATION CW, class-A fvision (MHz) VCE (V) 224.25 IC (A) 25 3.2 Th (°C) dim(1) (dB) Po sync(1) (W) GP (dB) 70 −55 >13 >13.5 70 −55 typ. 14.5 typ. 14.5 70 −52 typ. 22 typ. 14.5 25 −55 typ. 19 typ. 14.8 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. C5 handbook, full pagewidth +VBB +VCC C6 C9 C10 C13 R1 L4 L2 C7 C3 50 Ω input C1 D.U.T. C11 L1 L6 L3 C2 C4 C15 L5 C8 C12 50 Ω output C14 MGG146 Fig.9 Class-A test circuit at fvision = 224.25 MHz. 1996 Oct 10 7 Philips Semiconductors Product specification VHF linear power transistor BLV33F List of components used in test circuit (see Figs 9 and 10). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C15 multilayer ceramic chip capacitor; note 1 560 pF, 500 V C2, C4, C12, C14 film dielectric trimmer 4 to 40 pF C3 multilayer ceramic chip capacitor; note 1 10 pF, 500 V C5 multilayer ceramic chip capacitor 470 nF, 50 V 2222 856 48474 C6, C10 multilayer ceramic chip capacitor 680 pF, 50 V 2222 852 13681 C7, C8 multilayer ceramic chip capacitor; note 1 47 pF, 500 V C9 polyester capacitor 330 nF C11 multilayer ceramic chip capacitor; note 1 68 pF, 500 V C13 solid tantalum capacitor 6.8 µF, 35 V L1 2 turns of 1.6 mm enamelled Cu wire L2 microchoke 1 µH L3 stripline; note 2 30 Ω L4 2 turns of closely wound 1 mm enamelled Cu wire L5 stripline; note 2 L6 2 turns of 1.6 mm enamelled Cu wire R1 carbon resistor 2222 809 08002 placed 8 mm from transistor edge int. diameter 5 mm length 5 mm leads 2 × 3 mm 4322 057 01080 6 mm × 32.7 mm int. diameter 5 mm leads 2 × 10 mm 30 Ω 6 mm × 24 mm int. diameter 4 mm length 4.5 mm leads 2 × 3 mm 10 Ω Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16". 1996 Oct 10 8 Philips Semiconductors Product specification VHF linear power transistor BLV33F 115 handbook, full pagewidth rivets rivets 50 rivets rivets +VBB +VCC C13 R1 C5 C2 L2 C3 50 Ω input C10 C6 C9 L4 C7 L3 C11 C14 50 Ω output L5 L6 C15 C1 L1 C8 C12 C4 MGG149 Dimensions in mm. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit. 1996 Oct 10 9 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG135 MGG134 −44 dim 30 handbook, halfpage handbook, halfpage −48 15 (1) (dB) Gp dcm Gp (2) (%) (dB) 14 20 −52 (2) (1) (2) 13 (1) −56 10 12 −60 dim 11 −64 10 0 20 30 Po sync (W) 0 40 20 Po sync (W) 40 VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz. (1) Th = 25 °C. (2) Th = 70 °C. VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz. (1) Th = 25 °C. (2) Th = 70 °C. Fig.11 Intermodulation distortion and power gain as a functions of output power. Fig.12 Cross-modulation distortion as a function of output power. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level (see Fig.11). Intermodulation distortion of input signal ≤−70 dB. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to −20 dB (see Fig.12). Ruggedness in class-A operation The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to 30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.2 K/W. 1996 Oct 10 10 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG137 MGG136 6 1 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 4 xi 0 RL 2 XL −1 50 150 0 50 250 f (MHz) 150 f (MHz) 250 Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C. Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. MGG138 30 handbook, halfpage Gp (dB) 20 10 0 50 150 f (MHz) 250 Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C. Fig.15 Power gain as a function of frequency; typical values. 1996 Oct 10 11 Philips Semiconductors Product specification VHF linear power transistor BLV33F RF performance in VHF class-AB operation (C.W.). MODE OF OPERATION f (MHz) VCE (V) IC, IC(ZS) (A) Th (°C) CW, class-AB 224.25 28 0.2 70 ηC (%) PL (W) IC (A) GP (dB)(1) 40 typ. 2.75 typ. 52 typ. 11.5 85 typ. 4.25 typ. 71 typ. 10.5 Note 1. Gain compression point of 1 dB is at typical 85 W (minimum 75 W). Using a 3rd-order amplitude transfer characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television service (negative modulation, C.C.I.R. system). handbook, full pagewidth C6 +VBB +VCC C10 C7 C15 R1 L4 L2 C1 50 Ω C8 C4 C2 D.U.T. C11 C13 L1 L6 L3 C3 C16 C5 C18 50 Ω L5 C12 C9 C14 C17 MGG147 Fig.16 Class-AB test circuit at fvision = 224.25 MHz. 1996 Oct 10 12 Philips Semiconductors Product specification VHF linear power transistor BLV33F List of components used in test circuit (see Figs 16 and 17). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C18 multilayer ceramic chip capacitor; note 1 620 pF, 100 V C2 multilayer ceramic chip capacitor; note 1 27 pF, 500 V C3 film dielectric trimmer 2 to 18 pF C4 multilayer ceramic chip capacitor; note 1 30 pF, 500 V C5, C14 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C10 multilayer ceramic chip capacitor 470 nF, 50 V 2222 856 48474 C7, C15 multilayer ceramic chip capacitor 680 pF, 50 V 2222 852 13681 C8, C9 multilayer ceramic chip capacitor; note 1 68 pF, 500 V placed 6.4 mm from transistor edge C11, C12 multilayer ceramic chip capacitor; note 1 43 pF, 500 V placed 10 mm from transistor edge C13 multilayer ceramic chip capacitor; note 1 39 pF, 500 V C16 multilayer ceramic chip capacitor; note 1 3.3 pF, 500 V C17 film dielectric trimmer 1.4 to 5.5 pF L1 2 turns of 1.6 mm enamelled Cu wire int. diameter 4.5 mm length 4 mm leads 2 × 4 mm L2 3 turns of 1 mm closely wound enamelled Cu wire int. diameter 5 mm leads 2 × 7 mm L3 stripline; note 2 L4 2 turns of 1 mm closely wound enamelled Cu wire L5 stripline; note 2 L6 2 turns of 1.6 mm enamelled Cu wire R1 carbon resistor 30 Ω 2222 809 09003 2222 809 09001 6 mm × 47.8 mm int. diameter 5 mm leads 2 × 8 mm 30 Ω 6 mm × 42.9 mm int. diameter 4 mm length 4 mm leads 2 × 3 mm 10 Ω Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16". 1996 Oct 10 13 Philips Semiconductors Product specification VHF linear power transistor BLV33F 150 handbook, full pagewidth rivets rivets 57 rivets rivets +VBB +VCC C10 C3 C6 C17 C15 C7 R1 50 Ω input C4 C1 C2 L4 L2 C8 L1 C13 C11 L3 L5 C18 L6 C16 C12 C9 50 Ω output C5 C14 MGG151 Dimensions in mm. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.17 Component layout and printed-circuit board for 224.25 MHz class-AB test circuit. 1996 Oct 10 14 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG140 MGG139 75 15 100 PL handbook, halfpage handbook, halfpage ηc (W) 80 ηc (%) Gp (dB) Gp 60 50 10 40 20 5 0 0 2 4 6 PS (W) 0 8 50 PL (W) 25 100 VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz. VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 °C; fvision = 224.25 MHz. Fig.18 Load power as a function of source power; typical values. Fig.19 Power gain and efficiency as functions of load power; typical values. Ruggedness in class-AB operation The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR ≤2 through all phases) up to 60 W (RMS) and 85 W (PEP) under the following conditions:VCE = 28 V; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.2 K/W. 1996 Oct 10 15 Philips Semiconductors Product specification VHF linear power transistor BLV33F MGG141 Zi (Ω) MGG142 4 1 handbook, halfpage handbook, halfpage ZL (Ω) ri RL xi 2 0 XL −1 50 150 f (MHz) 0 50 250 150 f (MHz) 250 Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C. Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C. Fig.20 Input impedance as a function of frequency (series components); typical values. Fig.21 Load impedance as a function of frequency (series components); typical values. MGG143 20 handbook, halfpage Gp (dB) 10 0 50 150 f (MHz) 250 Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C. Fig.22 Power gain as a function of frequency; typical values. 1996 Oct 10 16 Philips Semiconductors Product specification VHF linear power transistor BLV33F PACKAGE OUTLINE 22 max handbook, full pagewidth 6.35 0.14 4 min ceramic 1 2 3 4 5 6 5.7 5.3 6.48 12.96 5.5 5.0 25.2 max 18.42 3.8 min 13 max 5.7 5.3 BeO metal 3.35 (2x) 3.04 MBC877 12.2 2.5 4.50 4.05 7.5 max Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed. Fig.23 SOT119A. 1996 Oct 10 17 Philips Semiconductors Product specification VHF linear power transistor BLV33F DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 10 18 Philips Semiconductors Product specification VHF linear power transistor BLV33F NOTES 1996 Oct 10 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127041/1200/01/pp20 Date of release: 1996 Oct 10 Document order number: 9397 750 01036