DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Oct 14 1999 Jun 25 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PINNING FEATURES • Double stage internal input and output matching networks for an optimum wideband capability and high gain PIN SYMBOL DESCRIPTION 1 c1 collector 1; note 1 • Polysilicon emitter ballasting resistors for an optimum temperature profile 2 c2 collector 2; note 1 3 b1 base 1 • Gold metallization ensures excellent reliability. 4 b2 base 2 5 e common emitter; note 2 APPLICATIONS Notes • Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound). 1. Collectors 1 and 2 are connected together internally. 2. Common emitters are connected to the flange. DESCRIPTION c1 handbook, halfpage 1 NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. 2 b1 e 5 b2 5 3 4 Top view MAM031 c2 Fig.1 Simplified outline (SOT262B) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) ∆Gp (dB) CW class-AB 860 28 150 ≥8 typ. 9 ≥45 typ. 52 ≤1 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Jun 25 2 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 25 A Ptot total power dissipation Tmb = 25 °C − 350 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Ptot = 350 W; note 1 0.5 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.15 K/W Note 1. Thermal resistance is determined under specified RF operating conditions. MBK231 102 handbook, halfpage MGD528 400 handbook, halfpage Ptot (W) IC (A) 300 (2) (1) (2) 10 200 (1) 100 1 1 10 VCE (V) 0 102 0 80 120 160 Th (°C) Total device; both sections equally loaded. (1) Tmb = 25 °C. (2) Th = 70 °C. Total device; both sections equally loaded. (1) Continuous operation. (2) Short time operation during mismatch. Fig.2 DC SOAR. 1999 Jun 25 40 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − MAX. − UNIT V(BR)CBO collector-base breakdown voltage IE = 0; IC = 60 mA 65 V V(BR)CEO collector-emitter breakdown voltage IB = 0; IC = 150 mA 30 − − V V(BR)EBO emitter-base breakdown voltage IE = 3 mA; IC = 0 3 − − V ICBO collector-base leakage current VCB = 28 V − − 5 mA hFE DC current gain IC = 4.5 A; VCE = 10 V 30 − 140 − ∆hFE DC current gain ratio of both sections IC = 4.5 A; VCE = 10 V 0.67 − 1.5 − Cc collector capacitance IE = ie= 0; VCE = 28 V; f = 1 MHz; note 1 − 75 − pF Note 1. The value of Cc is that of the die only, it is not measurable because of the internal matching network. APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit; note 1. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) PL (W) Gp (dB) ηC (%) ∆Gp (dB) CW class-AB 860 28 0.8 150 ≥8 typ. 9 ≥45 typ. 52 ≤1 Note 1. See application note “AN98014 in handbook SC19b.” Ruggedness in class-AB operation The BLV862 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A; PL = 150 W; Rth mb-h = 0.15 K/W. 1999 Jun 25 4 Philips Semiconductors Product specification UHF linear push-pull power transistor MGD529 12 handbook, halfpage Gp (dB) BLV862 MGD530 240 60 handbook, halfpage ηC (%) Gp 8 PL (W) 40 160 20 80 ηC 4 0 0 40 80 120 0 0 160 200 PL (W) 10 0 20 PD (W) Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A. Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A. Fig.4 Fig.5 Power gain and collector efficiency as functions of load power; typical values. MGG812 −20 Load power as a function of drive power; typical values. MGG813 −20 handbook, halfpage 30 handbook, halfpage dim (dB) dim (dB) −30 −30 −40 −40 −50 −50 −60 −60 0 100 200 300 400 500 Po sync (W) 0 100 200 300 400 Po sync (W) Th = 25 °C; VCE = 28 V; ICQ = 0.8 A; 2-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB). Th = 25 °C; VCE = 28 V; ICQ = 0.8 A; 3-tone: fvision = 855.25 MHz (-8 dB); fsideband = 859.68 MHz (-16 dB); fsound = 860.75 MHz (-10 dB). Fig.6 Fig.7 Intermodulation distortion as a function of output power; typical values. 1999 Jun 25 5 Intermodulation distortion as a function of output power; typical values. 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C17 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 102 handbook, full pagewidth 56 R7 R8 R9 X1 T1 C19 P1 C20 X2 T2 C11 B2 50 Ω input 50 Ω output C16 C2 C1 C3 C4 R1 R2 R3 R4 R5 R6 C5,C6 C7,C8 C10 C13 C9 C14 C18 C15 BLV862 C17 B1 C12 MBH775 Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.9 Printed-circuit board and component lay-out for the 860 MHz class-AB test circuit. 1999 Jun 25 7 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; note 1 10 pF C2. C3 multilayer ceramic chip capacitor 1 nF 2222 852 47102 C4 solid aluminium capacitor 220 µF; 16 V 2222 031 35221 C5, C7 Tekelec trimmer 1 to 5 pF C6, C8 multilayer ceramic chip capacitor; note 2 6.8 pF C9, C10 multilayer ceramic chip capacitor; note 3 10 pF C11, C13 multilayer ceramic chip capacitor; note 1 100 pF C12 multilayer ceramic chip capacitor; note 1 8.2 pF C14 multilayer ceramic chip capacitor; note 2 3.9 pF C15 solid aluminium capacitor 100 µF; 40 V 2222 031 37101 C16, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C18 multilayer ceramic chip capacitor; note 1 22 pF C19 multilayer ceramic chip capacitor; note 1 100 pF C20 multilayer ceramic chip capacitor L1, L2 stripline; note 4 47 × 1.8 mm L3, L4 stripline; note 4 2 × 5 mm L5, L6 stripline; note 4 4 × 6 mm L7, L8 stripline; note 4 4 × 8 mm L9, L10 stripline; note 4 8.1 × 10 mm 15 nF 2222 852 47153 L11, L12 stripline; note 4 15 × 2 mm L13, L14 stripline; note 4 5 × 10 mm L15, L16 stripline; note 4 10 × 8 mm L17, L18 stripline; note 4 12.9 × 5 mm L19, L20 stripline; note 4 48.7 × 1.8 mm B1 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 47 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 48.7 mm R1, R6 SMD resistor 100 Ω 0805 2122 118 03881 R2, R3, R4, R5, R8 SMD resistor 1Ω 0805 2122 118 04562 R7 SMD resistor 47 Ω 0805 2122 118 04598 R9 SMD resistor 1.2 kΩ 0805 2122 118 04579 P1 potentiometer 4.7 kΩ X1, X2 copper ribbon hairpin T1, T2 NPN transistor BD139 9330 912 20112 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic (εr = 2.55); thickness 0.5 mm. 1999 Jun 25 8 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 MGG814 4 MGG815 3 handbook, halfpage handbook, halfpage Zi ZL (Ω) (Ω) 3 2 RL xi 2 ri 1 XL 1 0 0 −1 400 500 600 700 −1 400 800 900 f (MHz) 500 600 700 800 900 f (MHz) Th = 25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). Th = 25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). Fig.10 Input impedance (per section) as function of frequency (series components); typical values. Fig.11 Load impedance (per section) as function of frequency (series components); typical values. MGG816 16 handbook, halfpage Gp (dB) 12 handbook, halfpage 8 Zi ZL MBA451 4 0 400 500 600 700 800 900 f (MHz) Th = 25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). Fig.12 Power gain as a function of frequency; typical values. 1999 Jun 25 Fig.13 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262B D A F D1 U1 B q C H1 w2 M C M 1 H c 2 p U2 E1 E 5 3 A 4 w1 M A M B M w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.39 4.62 8.51 8.25 0.16 0.10 inches D D1 e E E1 22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03 F H 1.78 1.52 0.212 0.335 0.006 0.873 0.865 0.404 0.405 0.070 0.435 0.182 0.325 0.004 0.845 0.855 0.396 0.396 0.060 OUTLINE VERSION 15.49 19.69 14.99 19.17 0.61 0.59 REFERENCES IEC JEDEC EIAJ p Q q U1 U2 w1 w2 w3 3.28 3.02 2.47 2.20 27.94 34.17 33.90 9.91 9.65 0.25 0.51 0.25 0.775 0.129 0.097 1.345 0.390 1.100 0.010 0.020 0.010 0.755 0.119 0.087 1.335 0.380 EUROPEAN PROJECTION ISSUE DATE 99-03-29 SOT262B 1999 Jun 25 H1 10 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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