PHILIPS BLV193

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV193
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
• Emitter ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
intended for common emitter class-A
and class-AB operation in the
900 MHz communications band.
The transistor has a SOT171 flange
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
BLV193
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
PL
(W)
VCE
(V)
c.w. class-AB
900
12.5
12
≥ 6.5
≥ 50
−
c.w. class-A
900
12
6 (PEP)
typ. 11
−
typ. −30
Note
1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.
PIN CONFIGURATION
halfpage
PINNING - SOT171
PIN
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
dim
(dB)
(note 1)
ηC
(%)
Gp
(dB)
1
2
3
4
5
6
c
handbook, halfpage
b
MBB012
Top view
e
MBA931 - 1
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV193
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
36
V
VCEO
collector-emitter voltage
open base
−
16
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current
DC or average value
−
3.5
A
Ptot
total power dissipation
up to Tmb = 25 °C
−
44
W
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
200
°C
MRA552
10
MRA553
60
handbook, halfpage
handbook, halfpage
IC
(A)
Ptot
(W)
Tmb = 25 oC
(2)
Th = 70 oC
40
(1)
1
20
10−1
0
1
10
VCE (V)
102
0
20
40
60
80
100
120
Th (oC)
(1) Continuous operation.
(2) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-mb
from junction to mounting base
Rth mb-h
from mounting base to heatsink
March 1993
CONDITIONS
Pdis = 44 W; Tmb = 25 °C
THERMAL
RESISTANCE
4.0 K/W
0.4 K/W
3
Philips Semiconductors
Product specification
UHF power transistor
BLV193
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
Ic = 20 mA
36
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base;
Ic = 40 mA
16
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 0.5 mA
3
−
−
V
ICES
collector-emitter leakage current
VCE = 16 V;
VBE = 0
−
−
1
mA
hFE
DC current gain
VCE = 10 V;
Ic = 1.2 A;
note 1
25
60
−
Cc
collector capacitance
VCB = 12.5 V;
IE = Ie = 0;
f = 1 MHz
−
24.5
−
pF
Cre
feedback capacitance
VCE = 12.5 V;
Ic = 0;
f = 1 MHz
−
13
−
pF
Cc-mb
collector-mounting base capacitance
−
2
−
pF
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA559
MRA546
100
handbook,
halfpage
handbook,50
halfpage
hFE
Cc
(pF)
80
40
VCE = 12.5 V
10 V
60
30
40
20
20
10
0
0
0
2
4
IC (A)
6
0
4
IE = ie = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current, typical values.
MRA554
handbook, 40
halfpage
Cre
(pF)
30
20
10
0
4
8
12
16
VCE (V)
f = 1 MHz.
Fig.6
Feedback capacitance as a function of
collector-emitter voltage, typical values.
March 1993
12
16
VCB (V)
Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.
0
8
5
Collector capacitance as a function of
collector-base voltage, typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV193
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter test circuit; Rth j-mb = 0.4 K/W.
f
(MHz)
MODE OF OPERATION
VCE
(V)
ICQ
(A)
PL
(W)
dim
(dB)
(note 1)
ηc
(%)
GP
(dB)
c.w. class-AB
900
12.5
0.01
12
≥ 6.5
typ. 7.5
> 50
typ. 60
−
c.w. class-A
900
12
1.3
6 (PEP)
typ. 11
−
typ. −30
Note
1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.
MRA555
handbook,10
halfpage
Gp
(dB)
handbook, halfpage
ηC
(%)
80
Gp
8
MRA551
16
100
PL
(W)
12
60
ηC
6
8
4
40
2
20
4
0
0
4
8
12
PL (W)
0
0
16
0
1
2
3
Class-AB operation; VCE = 12.5 V; f = 900 MHz;
ICQ = 10 mA.
Class-AB operation; VCE = 12.5 V; f = 900 MHz;
ICQ = 10 mA.
Fig.7
Fig.8
Gain and efficiency as functions of load
power, typical values.
PD (W)
4
Load power as a function of drive power,
typical values.
Ruggedness in class-AB operation
The BLV193 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases under
the following conditions:
VCE = 15.5 V, f = 900 MHz,
Th = 25 °C, Rth j-mb = 0.4 K/W, and
rated output power.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA558
handbook, 16
halfpage
MRA550
handbook, 12
halfpage
PL(PEP)
(W)
10
Gp
(dB)
12
8
8
6
4
4
2
0
0
4
8
PL(PEP) (W)
0
12
0
0.2
0.4
0.6
0.8
1
PD(PEP) (W)
Class-A operation; VCE = 12 V; IC = 1.3 A;
fp = 900 MHz; fq = 901 MHz.
Class-A operation; VCE = 12 V; IC = 1.3 A;
fp = 900 MHz; fq = 901 MHz.
Fig.9
Fig.10 Load power (PEP) as a function of drive
power (PEP), typical values.
Gain as a function of load power (PEP),
typical values.
MRA560
0
handbook,
d , d halfpage
3 5
(dB)
−10
−20
d3
−30
−40
d5
−50
−60
−70
0
4
8
12
PL(PEP) (W)
Class-A operation; VCE = 12 V; IC = 1.3 A;
fp = 900 MHz; fq = 901 MHz.
Fig.11 Intermodulation products as a function of
load power (PEP), typical values.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV193
handbook, full pagewidth
,,,,,,, ,,,,,,,
L1
C1
50 Ω
C2
L2
C3
C5
L3
C6
L4 L5
DUT
C8
C9
C7
C4
C12
L7
L6
C10
50 Ω
C11
L9
L8
C13
C16
R1
L10
L11
C14
C15
V bias
+VCC
R2
MBC797
Fig.12 Class-A and class-AB test circuit at f = 900 MHz.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV193
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
C1, C12
multilayer ceramic chip capacitor
(note 1)
33 pF
C2, C3, C10, C11
film dielectric trimmer
1.4 to 5.5 pF
C4, C5
multilayer ceramic chip capacitor
(note 1)
4.7 pF
C6, C7
multilayer ceramic chip capacitor
(note 1)
5.6 pF
C8, C9
multilayer ceramic chip capacitor
(note 1)
3.3 pF
C13
multilayer ceramic chip capacitor
(note 1)
10 pF
C14
electrolytic capacitor
6.8 µF, 63 V
C15
multilayer ceramic chip capacitor
(note 1)
330 pF
DIMENSIONS
CATALOGUE NO.
2222 809 09001
C16
multilayer ceramic chip capacitor
100 nF
L1, L7
stripline (note 2)
50 Ω
length 29 mm;
width 2.4 mm
2222 852 47104
L2
stripline (note 2)
50 Ω
length 6 mm;
width 2.4 mm
L3
stripline (note 2)
42.7 Ω
length 13.1 mm;
width 3 mm
L4
stripline (note 2)
42.7 Ω
length 4.4 mm;
width 3 mm
L5
stripline (note 2)
42.7 Ω
length 4.6 mm;
width 3 mm
L6
stripline (note 2)
50 Ω
length 7 mm;
width 2.4 mm
L8
4 turns closely wound enamelled
0.4 mm copper wire
60 nH
int. dia 3 mm;
leads 2 × 5 mm
L9
4 turns enamelled 1 mm copper
wire
45 nH
int. dia. 4 mm;
leads 2 × 5 mm
L10, L11
grade 3B Ferroxcube wideband HF
choke
R1, R2
metal film resistor
4312 020 36642
10 Ω, 0.25 W
Notes
1. American Technical Ceramics type 100A or capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch.
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
BLV193
124 mm
handbook, full pagewidth
80 mm
MBC798
V bias
handbook, full pagewidth
VCC
L11
C14
L10
C13
R2
C16
R1
C5
C1
L1
C2
L2
C3
C15
L9
L8
L4
C8
C6
C12
L6
L3
C4
C7
L5 C9
C10
L7
C11
MBC799
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by
fixing screws and copper straps under the emitter leads.
Fig.13 Printed circuit board and component layout for 900 MHz test circuit.
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA548
MRA561
5
handbook, halfpage
5
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
4
4
RL
xi
3
3
ri
2
2
1
1
0
840
920
880
f (MHz)
0
840
960
XL
880
920
f (MHz)
960
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Fig.14 Input impedance (series components) as a
function of frequency, typical values.
Fig.15 Load impedance (series components) as a
function of frequency, typical values.
MRA556
handbook, 10
halfpage
Gp
(dB)
8
6
handbook, halfpage
4
Zi
ZL
2
MBA451
0
840
880
920
f (MHz)
960
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Fig.17 Power gain as a function of frequency,
typical values.
Fig.16 Definition of transistor impedance.
March 1993
11
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA547
5
handbook, halfpage
MRA549
5
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
4
RL
4
xi
ri
XL
3
3
2
2
1
1
0
840
920
880
f (MHz)
0
840
960
880
920
f (MHz)
960
Class-A operation; VCE = 12 V; IC = 1.3 A;
Th = 25 °C.
Class-A operation; VCE = 12 V; IC = 1.3 A;
Th = 25 °C.
Fig.18 Input impedance (series components) as a
function of frequency, typical values.
Fig.19 Load impedance (series components) as a
function of frequency, typical values.
MRA557
handbook,14
halfpage
Gp
(dB)
12
8
handbook, halfpage
4
Zi
ZL
MBA451
0
840
880
920
f (MHz)
960
Class-A operation; VCE = 12 V; IC = 1.3 A;
Th = 25 °C.
Fig.21 Power gain as a function of frequency,
typical values.
Fig.20 Definition of transistor impedance.
March 1993
12
Philips Semiconductors
Product specification
UHF power transistor
BLV193
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C
H1
c
b1
2
H
4
6
E1
U2
1
A
3
5
E
w1 M A B
p
Q
w3 M
b
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
inches
w1
w2
w3
0.51
1.02
0.26
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236
0.120 0.445 0.365 0.135 0.170
0.980 0.236
0.725
0.02
0.140
0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224
0.100 0.415 0.355 0.125 0.162
0.970 0.224
0.04
0.01
OUTLINE
VERSION
F
JEDEC
EIAJ
SOT171A
March 1993
H1
3.05 11.31 9.27
2.54 10.54 9.01
REFERENCES
IEC
H
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 6.00
18.42
4.11
24.63 5.70
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
13
Philips Semiconductors
Product specification
UHF power transistor
BLV193
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
14