BT169D-L Thyristor logic level Rev. 02 — 26 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate thyristor in a SOT54 plastic package. 1.2 Features n Very sensitive gate n Direct interfacing to logic level ICs n Direct interfacing to low power gate drive circuits 1.3 Applications n General purpose switching and phase control 1.4 Quick reference data n VDRM ≤ 400 V n VRRM ≤ 400 V n ITSM ≤ 8 A (t = 10 ms) n IT(RMS) ≤ 0.8 A n IT(AV) ≤ 0.5 A n IGT ≤ 50 µA 2. Pinning information Table 1. Pinning Pin Description 1 anode (A) 2 gate (G) 3 Simplified outline Graphic symbol A K G cathode (K) sym037 321 SOT54 (TO-92) BT169D-L NXP Semiconductors Thyristor logic level 3. Ordering information Table 2. Ordering information Type number Package BT169D-L Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDRM repetitive peak off-state voltage Conditions - 400 V VRRM repetitive peak reverse voltage - 400 V IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; see Figure 1 - 0.5 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 - 0.8 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms - 8 A t = 8.3 ms - 9 A tp = 10 ms - 0.32 A2s ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs - 50 A/µs I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current - 1 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C for fusing over any 20 ms period BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 2 of 12 BT169D-L NXP Semiconductors Thyristor logic level 001aab446 0.8 a= 1.57 Ptot (W) 77 Tlead(max) (°C) 1.9 0.6 89 2.2 2.8 0.4 101 4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.2 113 α 125 0.6 0 0 0.1 0.2 0.3 0.4 0.5 IT(AV) (A) Form factor a = IT(RMS) / IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values 001aab499 10 ITSM (A) 8 6 4 IT ITSM 2 t tp Tj(init) = 25 °C max 0 1 102 10 103 number of cycles f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 3 of 12 BT169D-L NXP Semiconductors Thyristor logic level 001aab497 103 IT ITSM (A) 102 ITSM t tp Tj(init) = 25 °C max 10 1 10−5 10−4 10−3 10−2 tp (s) tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 001aab449 2 001aab450 1 IT(RMS) (A) 0.8 IT(RMS) (A) (1) 1.5 0.6 1 0.4 0.5 0.2 0 10−2 10−1 f = 50 Hz; Tlead ≤ 83 °C Fig 4. 0 −50 1 10 surge duration (s) 50 100 150 Tlead (°C) (1) Tlead = 83 °C RMS on-state current as a function of surge duration for sinusoidal currents Fig 5. RMS on-state current as a function of lead temperature; maximum values BT169D-L_2 Product data sheet 0 © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 4 of 12 BT169D-L NXP Semiconductors Thyristor logic level 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead see Figure 6 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient printed-circuit board mounted; lead length = 4 mm - 150 - K/W 001aab451 102 Zth(j-lead) (K/W) 10 1 δ= P tp T 10−1 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to lead as a function of pulse width BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 5 of 12 BT169D-L NXP Semiconductors Thyristor logic level 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; see Figure 8 - - 50 µA IL latching current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ; see Figure 10 - 2 6 mA IH holding current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ; see Figure 11 - 2 5 mA VT on-state voltage IT = 1.2 A - 1.25 1.7 V VGT gate trigger voltage IT = 10 mA; see Figure 7 - 0.5 0.8 V VD = 12 V VD = VDRM(max); Tj = 125 °C ID off-state current 0.2 0.3 - V - 0.05 0.1 mA RGK = 1 kΩ 500 800 - V/µs gate open circuit - 25 - V/µs VD = VDRM(max); Tj = 125 °C; RGK = 1 kΩ Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12 tgt gate-controlled turn-on time ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs - 2 - µs tq commutated turn-off time VDM = 0.67 × VDRM(max); Tj = 125 °C; ITM = 1.6 A; VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ - 100 - µs BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 6 of 12 BT169D-L NXP Semiconductors Thyristor logic level 001aab501 1.6 VGT VGT(25°C) IGT IGT(25°C) 1.2 2 0.8 1 0.4 −50 0 50 100 001aab502 3 0 −50 150 0 50 100 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aab454 5 150 Tj (°C) IT (A) Fig 8. Normalized gate trigger current as a function of junction temperature 001aab503 3 IL IL(25°C) 4 2 3 2 1 1 (1) 0 0.4 (2) (3) 1.2 2 2.8 0 −50 0 Vo = 1.067 V 50 100 150 Tj (°C) VT (V) RGK = 1 kΩ Rs = 0.187 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 7 of 12 BT169D-L NXP Semiconductors Thyristor logic level 001aab504 3 001aab507 104 dVD/dt (V/µs) IH IH(25°C) (1) 2 103 1 102 (2) 0 −50 10 0 50 100 150 0 50 Tj (°C) 100 150 Tj (°C) RGK = 1 kΩ (1) RGK = 1 kΩ (2) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values 7. Package information Epoxy meets requirements of UL 94 V-0 at 3.175 mm. BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 8 of 12 BT169D-L NXP Semiconductors Thyristor logic level 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 13. Package outline SOT54 (TO-92) BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 9 of 12 BT169D-L NXP Semiconductors Thyristor logic level 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT169D-L_2 20080226 Product data sheet - BT169D-L_1 Modifications: BT169D-L_1 • • • • Section 1.2 “Features” on page 1: updated. Section 1.4 “Quick reference data” on page 1: condition ITSM updated. Table 3 “Limiting values” on page 2: table note 1 removed. Table 5 “Characteristics” on page 6: conditions IGT, IL, IH and VGT updated. 20071112 Product data sheet BT169D-L_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 10 of 12 BT169D-L NXP Semiconductors Thyristor logic level 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BT169D-L_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 February 2008 11 of 12 BT169D-L NXP Semiconductors Thyristor logic level 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 February 2008 Document identifier: BT169D-L_2