IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4 Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 Rev. 01 — 26 March 2009 Product data sheet 1. Product profile 1.1 General description IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are designed to protect appliances from destruction by either: • ElectroStatic Discharges (ESD) of ±30 kV, far exceeding IEC 61000-4-2 standard, level 4 • overvoltage • wrong polarity Each device has a single high-performance ESD-protection diode with the anode and cathode each connected to two solder balls. The IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are fabricated using monolithic silicon technology in a Wafer-Level Chip-Scale Package (WLCSP) with a pitch of 0.4 mm (IP438xCX4) or 0.5 mm (IP4085CX4). 1.2 Features n n n n Pb-free, RoHS and Dark Green compliant Single integrated high-performance ESD-protection diode Surge immunity according to IEC 61000-4-5 (8/20 µs) up to 60 A (IP4085CX4) ESD protection of >30 kV contact discharge, far exceeding IEC 61000-4-2 standard, level 4 n Small 2 × 2 solder ball WLCSP package with 0.4 mm or 0.5 mm pitch 1.3 Applications n General purpose ESD-protection such as for charger interfaces in: u Cellular and PCS mobile handsets u Cordless telephones u Wireless data (WAN/LAN) systems IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 2. Pinning information IP4085CX4 IP438xCX4 ball A1 index area 1 2 A B 001aaj238 Transparent top view Fig 1. Pin configuration IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4 Table 1. Pinning Pin Description A1 and A2 diode cathode B1 and B2 diode anode 3. Ordering information Table 2. Ordering information Type number Package Name Description Version IP4085CX4/LF WLCSP4 wafer level chip-size package: 4 bumps; 0.91 × 0.91 × 0.65 mm IP4085CX4/LF IP4385CX4/LF WLCSP4 wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm IP438xCX4/LF IP4386CX4/LF WLCSP4 wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm IP438xCX4/LF IP4387CX4/LF WLCSP4 wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm IP438xCX4/LF 4. Functional diagram A1 B1 A2 B2 001aaj239 Fig 2. Schematic diagram IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4 IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 2 of 16 NXP Semiconductors IP4085/4385/4386/4387/CX4 Integrated high-performance ESD-protection diodes 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage IP4085CX4/LF; IP4386CX4/LF −0.5 +14 V IP4385CX4/LF −0.5 +5.5 V IP4387CX4/LF −0.5 +8.0 V VESD electrostatic discharge voltage all pins to ground contact discharge [1] −30 +30 kV air discharge [1] −15 +15 kV contact discharge −8 +8 kV air discharge −15 +15 kV IP4085CX4 60 - A IP4385CX4; IP4387CX4 33 - A IP4386CX4 28 - A IP4085CX4; IP4386CX4; tp = 2 ms 10 - A IP4085CX4; IP4386CX4; tp = 5 ms 8.5 - A IP4085CX4; IP4386CX4; tp = 100 ms 3.5 - A IP4385CX4; IP4387CX4; tp = 2 ms 11 - A IP4385CX4; IP4387CX4; tp = 5 ms 9 - A IP4385CX4; IP4387CX4; tp = 100 ms 5 - A IEC 61000-4-2, level 4; all pins to ground IPP IFSM Ptot peak pulse current non-repetitive peak forward current total power dissipation IEC 61000-4-5; tp = 8/20 µs 10 pulses; 1 pulse per second forward conducting IP4085CX4 [3] - 1 W IP4385CX4; IP4386CX4; IP4387CX4 [3] - 0.7 W IP4085_4385_4386_4387_CX4_1 Product data sheet [2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 3 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes Table 3. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Tstg storage temperature Treflow(peak) peak reflow temperature Tamb ambient temperature 10 s maximum Min Max Unit −55 +150 °C - 260 °C −30 +85 °C [1] Device tested with over 1000 pulses of ±30 kV contact discharges, according to the IEC 61000-4-2 model. [2] Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures above 50 °C, the guaranteed life time is 48 hours at 0.7 W, assuming Rth to be 130 K/W as specified in Table 4. [3] Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time. 6. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient on a 2-layer PCB [1] Typ Unit [1] IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4 130 K/W Depends on details of layout. 7. Characteristics Table 5. Electrical characteristics Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions VBR breakdown voltage IR = 15 mA VCL(trt) ILR transient clamping voltage Min Typ Max Unit IP4085CX4; IP4386CX4 16 - - V IP4385CX4 7.0 - - V IP4387CX4 10 - - V IP4085CX4 - - 20.0 V IP4385CX4 - - 10.0 V IP4386CX4 - - 20.0 V IP4387CX4 - - 13.0 V IR = 1 A; Tamb ≤ 85 °C at surge peak pulse according to IEC 61000-4-5 reverse leakage current IP4085CX4; IP4385CX4 VR = +5.0 V - - 200 nA IP4386CX4 VR = +14.0 V - - 200 nA IP4387CX4 VR = +8.0 V - - 800 nA IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 4 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes Table 5. Electrical characteristics …continued Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Cd diode capacitance DC bias VR = 0 V; f = 1 MHz VFd Min Typ Max Unit IP4085CX4 - 180 - pF IP4385CX4 - 450 - pF IP4386CX4 - 160 - pF IP4387CX4 - 290 - pF diode forward voltage IP4085CX4 IP4385CX4 IP4386CX4 IP4387CX4 IF = 850 mA Tamb ≥ +25 °C - - 1.15 V −30 °C ≤ Tamb ≤ +85 °C - - 1.3 V Tamb ≥ +25 °C - - 1.0 V −30 °C ≤ Tamb ≤ +85 °C - - 1.1 V Tamb ≥ +25 °C - - 1.15 V −30 °C ≤ Tamb ≤ +85 °C - - 1.3 V Tamb ≥ +25 °C - - 1.10 V −30 °C ≤ Tamb ≤ +85 °C - - 1.25 V 8. Application information 8.1 Forward current DC clamping voltage The forward current DC clamping voltage is of interest when protecting circuits from voltage sources with the wrong polarity. Figure 3 shows the basic measurement setup. VCL IF V 001aaj240 Fig 3. Measuring DC clamping voltage with forward current IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 5 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 001aaj241 1.1 VCL (V) 001aaj242 1.1 VCL (V) (1) 1.0 1.0 (1) (2) (2) 0.9 0.9 (3) (3) 0.8 0.8 0.7 0.7 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 IF (A) (1) Tamb = +25 °C. (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. Fig 4. DC clamping voltage as a function of forward current; IP4085CX4 Fig 5. 001aaj243 1.1 VCL (V) DC clamping voltage as a function of forward current; IP4385CX4 001aaj244 1.1 VCL (V) (1) 1.0 1.0 IF (A) (1) 1.0 (2) (2) (3) 0.9 0.9 (3) 0.8 0.8 0.7 0.7 0 0.2 0.4 0.6 0.8 1.0 0 0.2 IF (A) (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. DC clamping voltage as a function of forward current; IP4386CX4 Fig 7. 0.8 1.0 DC clamping voltage as a function of forward current; IP4387CX4 IP4085_4385_4386_4387_CX4_1 Product data sheet 0.6 IF (A) (1) Tamb = +25 °C. Fig 6. 0.4 © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 6 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 8.2 Peak clamping voltage The peak clamping voltage for forward and reverse current pulses of 8/20 µs (IEC 61000-4-5) is significant when protecting circuits from power surges due to voltage discharges. The current pulse shape over time is shown in Figure 9. The basic measurement setup for forward current and reverse current pulses respectively are shown in Figure 8 and Figure 14. VCL(M) V IPP 001aaj245 Fig 8. Measuring peak clamping voltage with forward current 001aaj558 120 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 0 0 10 20 30 40 t (µs) Fig 9. 8/20 µs current pulse waveform according to IEC 61000-4-5 IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 7 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 001aaj247 17 VCL(M) (V) 001aaj248 20 VCL(M) (V) 15 (3) 16 (1) 13 (3) (2) 11 12 9 (1) (2) 7 8 20 28 36 44 20 28 36 IF (A) (1) Tamb = +25 °C. (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. Fig 10. Peak clamping voltage as a function of forward current; IP4085CX4 001aaj249 20 (3) (2) (1) VCL(M) (V) 44 IF (A) Fig 11. Peak clamping voltage as a function of forward current; IP4385CX4 001aaj250 20 VCL(M) (V) 16 16 12 12 (2) (3) (1) 8 8 20 28 36 44 20 28 IF (A) 44 IF (A) (1) Tamb = +25 °C. (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. Fig 12. Peak clamping voltage as a function of forward current; IP4386CX4 Fig 13. Peak clamping voltage as a function of forward current; IP4387CX4 IP4085_4385_4386_4387_CX4_1 Product data sheet 36 © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 8 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes VCL(M) V IPP 001aaj246 Fig 14. Measuring peak clamping voltage with reverse current 001aaj251 19 VCL(M) (V) (2) VCL(M) (V) 001aaj252 8.75 8.50 (2) 18 8.25 (1) (1) 8.00 (3) 17 (3) 7.75 16 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IR (A) 1.6 7.50 0.4 0.8 1.6 IR (A) (1) Tamb = +25 °C. (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. Fig 15. Peak clamping voltage as a function of reverse current; IP4085CX4 Fig 16. Peak clamping voltage as a function of reverse current; IP4385CX4 IP4085_4385_4386_4387_CX4_1 Product data sheet 1.2 © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 9 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 001aaj253 19 VCL(M) (V) 001aaj254 12.2 (2) VCL(M) (V) (2) 18 11.8 (1) (1) 17 11.4 (3) (3) 16 0.3 0.7 1.1 11.0 0.4 1.5 0.8 1.2 IR (A) 1.6 IR (A) (1) Tamb = +25 °C. (1) Tamb = +25 °C. (2) Tamb = +85 °C. (2) Tamb = +85 °C. (3) Tamb = −30 °C. (3) Tamb = −30 °C. Fig 17. Peak clamping voltage as a function of reverse current; IP4386CX4 Fig 18. Peak clamping voltage as a function of reverse current; IP4387CX4 Remark: Measurements done on a heat-dissipation optimized PCB with massive copper area under the DUT. 9. Marking ball A1 index area 1 2 A lot/date code information (characters are marked upside down) B Transparent top view 001aaj255 Fig 19. Marking of IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 10 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 10. Package outline WLCSP4: wafer level chip-size package; 4 bumps; 0.91 x 0.91 x 0.65 mm A B D IP4085CX4/LF ball A1 index area E A A1 detail X e C ∅v b y C A B B e A ball A1 index area 1 2 X 0 0.5 1 mm scale Dimensions Unit mm A A1 b D E max 0.70 0.26 0.37 0.96 0.96 nom 0.65 0.24 0.32 0.91 0.91 min 0.60 0.22 0.27 0.86 0.86 e v y 0.5 0.005 0.02 ip4085cx4_lf_po Outline version References IEC JEDEC JEITA IP4085CX4/LF European projection Issue date 08-12-04 Fig 20. Package outline IP4085CX4/LF (WLCSP4) IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 11 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes WLCSP4: wafer level chip-size package; 4 bumps; 0.76 x 0.76 x 0.61 mm A B D IP438xCX4/LF ball A1 index area E A A1 detail X e C ∅v b y C A B B e A ball A1 index area 1 2 X 0 Dimensions Unit mm 0.25 0.5 mm scale A A1 b D E max 0.66 0.22 0.31 0.81 0.81 nom 0.61 0.20 0.26 0.76 0.76 min 0.56 0.18 0.21 0.71 0.71 e v y 0.4 0.005 0.02 ip438xcx4_lf_po Outline version References IEC JEDEC JEITA IP438xCX4/LF European projection Issue date 08-12-04 Fig 21. Package outline IP438xCX4/LF (WLCSP4) IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 12 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 11. Design and assembly recommendations 11.1 PCB design guidelines For optimum performance it is recommended to use a Non-Solder Mask PCB Design (NSMD), also known as a copper-defined design, incorporating laser-drilled micro-vias connecting the ground pads to a buried ground-plane layer. This results in the lowest possible ground inductance and provides the best high frequency and ESD performance. For this case, refer to Table 6 for the recommended PCB design parameters. Table 6. Recommended PCB design parameters Parameter Value or Specification PCB pad diameter 200 µm Micro-via diameter 100 µm (0.004 inch) Solder mask aperture diameter 370 µm Copper thickness 20 µm to 40 µm Copper finish AuNi PCB material FR4 11.2 PCB assembly guidelines for Pb-free soldering Table 7. Assembly recommendations Parameter Value or Specification Solder screen aperture diameter 330 µm Solder screen thickness 100 µm (0.004 inch) Solder paste: Pb-free SnAg (3 % to 4 %) Cu (0.5 % to 0.9 %) Solder/flux ratio 50/50 Solder reflow profile see Figure 22 T (°C) Treflow(peak) 250 230 cooling rate 217 pre-heat t1 t2 t3 t4 t (s) t5 001aai943 The device is capable of withstanding at least three reflows of this profile. Fig 22. Pb-free solder reflow profile IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 13 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes Table 8. Symbol Reflow soldering process characteristics Parameter Conditions Treflow(peak) peak reflow temperature Min Typ Max Unit 230 - 260 °C t1 time 1 soak time 60 - 180 s t2 time 2 time during T ≥ 250 °C - - 30 s t3 time 3 time during T ≥ 230 °C 10 - 50 s t4 time 4 time during T > 217 °C 30 - 150 s t5 time 5 dT/dt rate of change of temperature - - 540 s cooling rate - - −6 °C/s pre-heat 2.5 - 4.0 °C/s 12. Abbreviations Table 9. Abbreviations Acronym Description DUT Device Under Test FR4 Flame Retard 4 LAN Local Area Network PCB Printed-Circuit Board PCS Personal Communication System RoHS Restriction of Hazardous Substances WAN Wide Area Network WLCSP Wafer-Level Chip-Scale Package 13. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes IP4085_4385_4386_4387_CX4_1 20090326 Product data sheet - - IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 14 of 16 IP4085/4385/4386/4387/CX4 NXP Semiconductors Integrated high-performance ESD-protection diodes 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] IP4085_4385_4386_4387_CX4_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 26 March 2009 15 of 16 NXP Semiconductors IP4085/4385/4386/4387/CX4 Integrated high-performance ESD-protection diodes 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 9 10 11 11.1 11.2 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Forward current DC clamping voltage . . . . . . . 5 Peak clamping voltage . . . . . . . . . . . . . . . . . . . 7 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Design and assembly recommendations . . . 13 PCB design guidelines . . . . . . . . . . . . . . . . . . 13 PCB assembly guidelines for Pb-free soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 March 2009 Document identifier: IP4085_4385_4386_4387_CX4_1